JP6034619B2 - Ｍｅｍｓ素子およびそれを用いた電気機器 - Google Patents

Ｍｅｍｓ素子およびそれを用いた電気機器 Download PDF

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Publication number
JP6034619B2
JP6034619B2 JP2012181674A JP2012181674A JP6034619B2 JP 6034619 B2 JP6034619 B2 JP 6034619B2 JP 2012181674 A JP2012181674 A JP 2012181674A JP 2012181674 A JP2012181674 A JP 2012181674A JP 6034619 B2 JP6034619 B2 JP 6034619B2
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Prior art keywords
layer
sealing layer
sealing
mems
interface
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Japanese (ja)
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JP2013059855A5 (enExample
JP2013059855A (ja
Inventor
内藤　康幸
康幸 内藤
フィリップ・ヘイリン
ティルマン ヘンドリカス・エー・シー
ティルマン ヘンドリカス・エー・シー
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2012181674A 2011-08-22 2012-08-20 Ｍｅｍｓ素子およびそれを用いた電気機器 Expired - Fee Related JP6034619B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012181674A JP6034619B2 (ja) 2011-08-22 2012-08-20 Ｍｅｍｓ素子およびそれを用いた電気機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011180432 2011-08-22
JP2011180432 2011-08-22
JP2012181674A JP6034619B2 (ja) 2011-08-22 2012-08-20 Ｍｅｍｓ素子およびそれを用いた電気機器

Publications (3)

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JP2013059855A JP2013059855A (ja) 2013-04-04
JP2013059855A5 JP2013059855A5 (enExample) 2015-04-09
JP6034619B2 true JP6034619B2 (ja) 2016-11-30

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JP2012181674A Expired - Fee Related JP6034619B2 (ja) 2011-08-22 2012-08-20 Ｍｅｍｓ素子およびそれを用いた電気機器

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US (1) US8610224B2 (enExample)
JP (1) JP6034619B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016008935A (ja) * 2014-06-26 2016-01-18 株式会社デンソー 半導体装置およびその製造方法

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JP5807664B2 (ja) * 2013-08-07 2015-11-10 横河電機株式会社 振動式トランスデューサおよびその製造方法
JP6594619B2 (ja) * 2014-11-14 2019-10-23 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP2016099234A (ja) * 2014-11-21 2016-05-30 株式会社デンソー 半導体装置およびその製造方法
JP6461030B2 (ja) 2016-03-15 2019-01-30 株式会社東芝 電子装置及び電子装置の製造方法
US10793427B2 (en) * 2017-04-04 2020-10-06 Kionix, Inc. Eutectic bonding with AlGe
US10167191B2 (en) 2017-04-04 2019-01-01 Kionix, Inc. Method for manufacturing a micro electro-mechanical system
JP6897455B2 (ja) * 2017-09-27 2021-06-30 セイコーエプソン株式会社 電子デバイスおよび電子デバイスの製造方法
US11313877B2 (en) 2018-06-19 2022-04-26 Kionix, Inc. Near-zero power wakeup electro-mechanical system
CN109374917B (zh) * 2018-11-15 2020-07-31 中国兵器工业集团第二一四研究所苏州研发中心 蜂窝状微止挡结构设计方法
WO2020171123A1 (ja) * 2019-02-20 2020-08-27 京セラ株式会社 蓋体、パッケージ、電子装置および電子モジュール
CN117751522A (zh) * 2021-07-29 2024-03-22 株式会社村田制作所 谐振装置及其制造方法

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JP2000124469A (ja) * 1998-10-13 2000-04-28 Toyota Central Res & Dev Lab Inc 微小密閉容器及びその製造方法
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
US7129576B2 (en) * 2003-09-26 2006-10-31 Tessera, Inc. Structure and method of making capped chips including vertical interconnects having stud bumps engaged to surfaces of said caps
EP1758814A4 (en) * 2004-03-15 2010-12-15 Georgia Tech Res Inst CAPACITY FOR ELECTRO-MECHANICAL MICROSYSTEMS AND MANUFACTURING METHOD THEREFOR
JP4617743B2 (ja) * 2004-07-06 2011-01-26 ソニー株式会社 機能素子およびその製造方法、ならびに流体吐出ヘッド
US7442570B2 (en) * 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
US7245009B2 (en) * 2005-06-29 2007-07-17 Motorola, Inc. Hermetic cavity package
JP2007222956A (ja) 2006-02-21 2007-09-06 Seiko Epson Corp Ｍｅｍｓデバイスおよびｍｅｍｓデバイスの製造方法
EP1840081B1 (en) * 2006-03-28 2013-08-28 Imec Method for forming a hermetically sealed cavity
JP4387392B2 (ja) * 2006-09-15 2009-12-16 パナソニック株式会社 シールドケースおよびこれを有するｍｅｍｓマイクロホン
JP4495711B2 (ja) * 2006-10-27 2010-07-07 株式会社日立製作所 機能素子及びその製造方法
JP2008137139A (ja) 2006-12-05 2008-06-19 Toshiba Corp 微小電気機械式装置及びその製造方法
JP2008188711A (ja) * 2007-02-05 2008-08-21 Oki Electric Ind Co Ltd 半導体装置製造方法
JP2009045712A (ja) * 2007-08-21 2009-03-05 Toshiba Corp Ｍｅｍｓ装置およびｍｅｍｓ装置製造方法
US8030823B2 (en) * 2009-01-26 2011-10-04 Resonance Semiconductor Corporation Protected resonator
US7919842B2 (en) * 2009-03-17 2011-04-05 Texas Instruments Incorporated Structure and method for sealing cavity of micro-electro-mechanical device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016008935A (ja) * 2014-06-26 2016-01-18 株式会社デンソー 半導体装置およびその製造方法

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US8610224B2 (en) 2013-12-17
JP2013059855A (ja) 2013-04-04
US20130214366A1 (en) 2013-08-22

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