JP6032911B2 - 光電変換素子およびその製造方法 - Google Patents
光電変換素子およびその製造方法 Download PDFInfo
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- JP6032911B2 JP6032911B2 JP2012066454A JP2012066454A JP6032911B2 JP 6032911 B2 JP6032911 B2 JP 6032911B2 JP 2012066454 A JP2012066454 A JP 2012066454A JP 2012066454 A JP2012066454 A JP 2012066454A JP 6032911 B2 JP6032911 B2 JP 6032911B2
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- Prior art keywords
- amorphous
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- semiconductor substrate
- amorphous film
- single crystal
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- 238000006243 chemical reaction Methods 0.000 title claims description 187
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 254
- 239000000758 substrate Substances 0.000 claims description 251
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 169
- 239000012535 impurity Substances 0.000 claims description 132
- 239000004065 semiconductor Substances 0.000 claims description 78
- 239000011247 coating layer Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 20
- 230000007423 decrease Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 141
- 229910021417 amorphous silicon Inorganic materials 0.000 description 84
- 230000007246 mechanism Effects 0.000 description 30
- 238000002360 preparation method Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 19
- 229910017817 a-Ge Inorganic materials 0.000 description 8
- 239000000969 carrier Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066454A JP6032911B2 (ja) | 2012-03-23 | 2012-03-23 | 光電変換素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066454A JP6032911B2 (ja) | 2012-03-23 | 2012-03-23 | 光電変換素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013197555A JP2013197555A (ja) | 2013-09-30 |
| JP2013197555A5 JP2013197555A5 (enrdf_load_stackoverflow) | 2015-03-12 |
| JP6032911B2 true JP6032911B2 (ja) | 2016-11-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012066454A Active JP6032911B2 (ja) | 2012-03-23 | 2012-03-23 | 光電変換素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6032911B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112015000559T5 (de) | 2014-01-29 | 2016-12-15 | Panasonic Intellectual Property Management Co., Ltd. | Solarzelle |
| JP6153885B2 (ja) * | 2014-05-09 | 2017-06-28 | 信越化学工業株式会社 | 裏面接合型太陽電池 |
| DE102015112046A1 (de) | 2015-07-23 | 2017-01-26 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung einseitig angeordneter strukturierter Kontakte in einer Schichtanordnung für ein photovoltaisches Bauelement |
| JP7183245B2 (ja) * | 2018-02-23 | 2022-12-05 | 株式会社カネカ | 太陽電池の製造方法 |
| JP2021129085A (ja) * | 2020-02-17 | 2021-09-02 | パナソニック株式会社 | 太陽電池セル |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4155899B2 (ja) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | 光起電力素子の製造方法 |
| FR2906406B1 (fr) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
| US20110000532A1 (en) * | 2008-01-30 | 2011-01-06 | Kyocera Corporation | Solar Cell Device and Method of Manufacturing Solar Cell Device |
| JP5347409B2 (ja) * | 2008-09-29 | 2013-11-20 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
| JP5518347B2 (ja) * | 2009-02-26 | 2014-06-11 | 三洋電機株式会社 | 太陽電池の製造方法 |
| EP2408021A4 (en) * | 2009-03-10 | 2017-05-17 | Panasonic Intellectual Property Management Co., Ltd. | Process for producing solar battery, and solar battery |
| CN102725858B (zh) * | 2010-01-26 | 2015-12-09 | 三洋电机株式会社 | 太阳能电池及其制造方法 |
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2012
- 2012-03-23 JP JP2012066454A patent/JP6032911B2/ja active Active
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| Publication number | Publication date |
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| JP2013197555A (ja) | 2013-09-30 |
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