JP6030416B2 - アバランシェフォトダイオードおよびその製造方法 - Google Patents

アバランシェフォトダイオードおよびその製造方法 Download PDF

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Publication number
JP6030416B2
JP6030416B2 JP2012250945A JP2012250945A JP6030416B2 JP 6030416 B2 JP6030416 B2 JP 6030416B2 JP 2012250945 A JP2012250945 A JP 2012250945A JP 2012250945 A JP2012250945 A JP 2012250945A JP 6030416 B2 JP6030416 B2 JP 6030416B2
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layer
multiplication
substrate
light absorption
electric field
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Japanese (ja)
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JP2014099527A (ja
JP2014099527A5 (enExample
Inventor
允洋 名田
允洋 名田
好史 村本
好史 村本
横山　春喜
春喜 横山
井田　実
実 井田
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NTT Inc
NTT Inc USA
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Nippon Telegraph and Telephone Corp
NTT Inc USA
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JP2012250945A 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法 Active JP6030416B2 (ja)

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JP2012250945A JP6030416B2 (ja) 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法

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JP2014099527A JP2014099527A (ja) 2014-05-29
JP2014099527A5 JP2014099527A5 (enExample) 2015-05-28
JP6030416B2 true JP6030416B2 (ja) 2016-11-24

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101666400B1 (ko) * 2014-10-30 2016-10-14 한국과학기술연구원 포토다이오드 및 포토다이오드 제조 방법
JP2016213362A (ja) * 2015-05-12 2016-12-15 日本電信電話株式会社 アバランシェフォトダイオード
JP6696735B2 (ja) * 2015-06-18 2020-05-20 富士通株式会社 Ｇｅ系光素子及びその製造方法
CN111052405B (zh) * 2017-09-06 2023-03-31 日本电信电话株式会社 雪崩光电二极管及其制造方法
CN107749424B (zh) * 2017-10-24 2023-11-07 江门市奥伦德光电有限公司 一种雪崩光电二极管及其制备方法
CN111312835B (zh) * 2020-02-19 2023-04-11 中国电子科技集团公司第四十四研究所 单电子传输雪崩光电二极管结构及制作方法
CN114420783A (zh) * 2022-02-10 2022-04-29 中国科学院上海技术物理研究所 一种基于双雪崩机制的台面型雪崩单光子探测器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148177A (ja) * 1984-01-12 1985-08-05 Fujitsu Ltd 半導体受光素子
JPS61182272A (ja) * 1985-02-08 1986-08-14 Toshiba Corp 半導体受光素子
JPH02222580A (ja) * 1989-02-23 1990-09-05 Nec Corp 半導体―金属―半導体ヘテロ界面形成方法
US6583482B2 (en) * 2000-12-06 2003-06-24 Alexandre Pauchard Hetero-interface avalance photodetector
WO2008088018A1 (ja) * 2007-01-18 2008-07-24 Nec Corporation 半導体受光素子
JP2010045417A (ja) * 2009-11-27 2010-02-25 Mitsubishi Electric Corp 半導体受光素子

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