JP6026270B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6026270B2
JP6026270B2 JP2012286531A JP2012286531A JP6026270B2 JP 6026270 B2 JP6026270 B2 JP 6026270B2 JP 2012286531 A JP2012286531 A JP 2012286531A JP 2012286531 A JP2012286531 A JP 2012286531A JP 6026270 B2 JP6026270 B2 JP 6026270B2
Authority
JP
Japan
Prior art keywords
power supply
internal
vdd
voltage
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012286531A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014130406A (ja
JP2014130406A5 (enExample
Inventor
野谷　宏美
宏美 野谷
孝之 福岡
孝之 福岡
貴志 山木
貴志 山木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2012286531A priority Critical patent/JP6026270B2/ja
Priority to US14/134,537 priority patent/US9727106B2/en
Publication of JP2014130406A publication Critical patent/JP2014130406A/ja
Publication of JP2014130406A5 publication Critical patent/JP2014130406A5/ja
Application granted granted Critical
Publication of JP6026270B2 publication Critical patent/JP6026270B2/ja
Priority to US15/649,051 priority patent/US10268250B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/263—Arrangements for using multiple switchable power supplies, e.g. battery and AC

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
JP2012286531A 2012-12-28 2012-12-28 半導体装置 Active JP6026270B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012286531A JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置
US14/134,537 US9727106B2 (en) 2012-12-28 2013-12-19 Semiconductor device having active mode and standby mode
US15/649,051 US10268250B2 (en) 2012-12-28 2017-07-13 Semiconductor device having active mode and standby mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012286531A JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2014130406A JP2014130406A (ja) 2014-07-10
JP2014130406A5 JP2014130406A5 (enExample) 2015-10-15
JP6026270B2 true JP6026270B2 (ja) 2016-11-16

Family

ID=51018733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012286531A Active JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置

Country Status (2)

Country Link
US (2) US9727106B2 (enExample)
JP (1) JP6026270B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6492507B2 (ja) * 2014-10-06 2019-04-03 株式会社デンソー 電子制御装置
JP2016092536A (ja) * 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
JP6779960B2 (ja) * 2018-11-07 2020-11-04 ルネサスエレクトロニクス株式会社 半導体装置
US11009902B1 (en) 2020-02-27 2021-05-18 Micron Technology, Inc. Power voltage selection circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3195052B2 (ja) * 1992-06-25 2001-08-06 ローム株式会社 電源切換え回路
JPH0749729A (ja) * 1993-08-04 1995-02-21 Seiko Epson Corp 電源切り換え回路およびｉｃカード
US6281724B1 (en) * 1998-11-17 2001-08-28 Analog Devices, Inc. Circuit for partial power-down on dual voltage supply integrated circuits
KR100603926B1 (ko) * 1999-10-25 2006-07-24 삼성전자주식회사 여러 전원 관리 상태를 갖는 컴퓨터 시스템을 위한 전원 공급 제어 회로 및 그의 제어 방법
CN1679109B (zh) * 2002-08-28 2011-06-15 Nxp股份有限公司 减小状态保持电路功耗的方法、状态保持电路以及电子器件
US7202729B2 (en) * 2004-10-21 2007-04-10 Texas Instruments Incorporated Methods and apparatus to bias the backgate of a power switch
JP5098367B2 (ja) 2007-03-06 2012-12-12 富士通セミコンダクター株式会社 電源電圧調整回路およびマイクロコンピュータ
JP5706635B2 (ja) * 2010-06-24 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置及びその内部回路の制御方法
TWI449286B (zh) * 2010-07-27 2014-08-11 Realtek Semiconductor Corp 電源切換方法與電路
JP2012230737A (ja) * 2011-04-26 2012-11-22 Elpida Memory Inc 半導体装置
US8314632B1 (en) * 2011-07-29 2012-11-20 Lattice Semiconductor Corporation Method and system for placing integrated circuits into predominantly ultra-low voltage mode for standby purposes
JP5843836B2 (ja) * 2012-11-30 2016-01-13 キヤノン株式会社 電力供給回路

Also Published As

Publication number Publication date
US10268250B2 (en) 2019-04-23
JP2014130406A (ja) 2014-07-10
US9727106B2 (en) 2017-08-08
US20140189381A1 (en) 2014-07-03
US20170308138A1 (en) 2017-10-26

Similar Documents

Publication Publication Date Title
US9001572B2 (en) System on chip including dual power rail and voltage supply method thereof
JP4666342B2 (ja) 半導体集積回路装置
JP4820571B2 (ja) 半導体装置
JP5087670B2 (ja) 電圧発生回路
JP2016092536A (ja) 半導体装置
US20080117702A1 (en) Integrated circuit having a memory with process-voltage-temperature control
JP6026270B2 (ja) 半導体装置
JP2005122574A (ja) 半導体集積回路
US11374568B2 (en) Semiconductor apparatus including power gating circuits
US9923457B2 (en) Regulated power converter and method of operating the same
JP2006190436A (ja) 半導体メモリ素子の内部電源電圧発生装置
US9557788B2 (en) Semiconductor memory device including array e-fuse
US8643357B2 (en) Internal voltage generator
KR101020293B1 (ko) 반도체 메모리 장치
US20070150770A1 (en) Power-up circuit and semiconductor memory apparatus with the same
US9716493B2 (en) Input circuit and semiconductor apparatus including the input circuit
US8649237B2 (en) Power-up signal generation circuit
JP5419111B2 (ja) 半導体装置
CN109088630B (zh) 包括功率门控电路的半导体装置
JP4322072B2 (ja) 半導体装置
JP5145436B2 (ja) 半導体装置
US8866521B2 (en) Voltage generation circuit of semiconductor memory apparatus
JP5317127B2 (ja) 半導体装置
KR100265609B1 (ko) 주기변환형 고전압 발생장치
US9893612B2 (en) Voltage generation circuit

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150827

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160712

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160825

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160920

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161012

R150 Certificate of patent or registration of utility model

Ref document number: 6026270

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150