JP2014130406A5 - - Google Patents

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Publication number
JP2014130406A5
JP2014130406A5 JP2012286531A JP2012286531A JP2014130406A5 JP 2014130406 A5 JP2014130406 A5 JP 2014130406A5 JP 2012286531 A JP2012286531 A JP 2012286531A JP 2012286531 A JP2012286531 A JP 2012286531A JP 2014130406 A5 JP2014130406 A5 JP 2014130406A5
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JP
Japan
Prior art keywords
vdd
ram
voltage
power supply
line
Prior art date
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Application number
JP2012286531A
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English (en)
Japanese (ja)
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JP6026270B2 (ja
JP2014130406A (ja
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Application filed filed Critical
Priority to JP2012286531A priority Critical patent/JP6026270B2/ja
Priority claimed from JP2012286531A external-priority patent/JP6026270B2/ja
Priority to US14/134,537 priority patent/US9727106B2/en
Publication of JP2014130406A publication Critical patent/JP2014130406A/ja
Publication of JP2014130406A5 publication Critical patent/JP2014130406A5/ja
Application granted granted Critical
Publication of JP6026270B2 publication Critical patent/JP6026270B2/ja
Priority to US15/649,051 priority patent/US10268250B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012286531A 2012-12-28 2012-12-28 半導体装置 Active JP6026270B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012286531A JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置
US14/134,537 US9727106B2 (en) 2012-12-28 2013-12-19 Semiconductor device having active mode and standby mode
US15/649,051 US10268250B2 (en) 2012-12-28 2017-07-13 Semiconductor device having active mode and standby mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012286531A JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2014130406A JP2014130406A (ja) 2014-07-10
JP2014130406A5 true JP2014130406A5 (enExample) 2015-10-15
JP6026270B2 JP6026270B2 (ja) 2016-11-16

Family

ID=51018733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012286531A Active JP6026270B2 (ja) 2012-12-28 2012-12-28 半導体装置

Country Status (2)

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US (2) US9727106B2 (enExample)
JP (1) JP6026270B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6492507B2 (ja) * 2014-10-06 2019-04-03 株式会社デンソー 電子制御装置
JP2016092536A (ja) * 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
JP6779960B2 (ja) * 2018-11-07 2020-11-04 ルネサスエレクトロニクス株式会社 半導体装置
US11009902B1 (en) 2020-02-27 2021-05-18 Micron Technology, Inc. Power voltage selection circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3195052B2 (ja) * 1992-06-25 2001-08-06 ローム株式会社 電源切換え回路
JPH0749729A (ja) * 1993-08-04 1995-02-21 Seiko Epson Corp 電源切り換え回路およびｉｃカード
US6281724B1 (en) * 1998-11-17 2001-08-28 Analog Devices, Inc. Circuit for partial power-down on dual voltage supply integrated circuits
KR100603926B1 (ko) * 1999-10-25 2006-07-24 삼성전자주식회사 여러 전원 관리 상태를 갖는 컴퓨터 시스템을 위한 전원 공급 제어 회로 및 그의 제어 방법
CN1679109B (zh) * 2002-08-28 2011-06-15 Nxp股份有限公司 减小状态保持电路功耗的方法、状态保持电路以及电子器件
US7202729B2 (en) * 2004-10-21 2007-04-10 Texas Instruments Incorporated Methods and apparatus to bias the backgate of a power switch
JP5098367B2 (ja) 2007-03-06 2012-12-12 富士通セミコンダクター株式会社 電源電圧調整回路およびマイクロコンピュータ
JP5706635B2 (ja) * 2010-06-24 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置及びその内部回路の制御方法
TWI449286B (zh) * 2010-07-27 2014-08-11 Realtek Semiconductor Corp 電源切換方法與電路
JP2012230737A (ja) * 2011-04-26 2012-11-22 Elpida Memory Inc 半導体装置
US8314632B1 (en) * 2011-07-29 2012-11-20 Lattice Semiconductor Corporation Method and system for placing integrated circuits into predominantly ultra-low voltage mode for standby purposes
JP5843836B2 (ja) * 2012-11-30 2016-01-13 キヤノン株式会社 電力供給回路

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