JP6025595B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法 Download PDF

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Publication number
JP6025595B2
JP6025595B2 JP2013027303A JP2013027303A JP6025595B2 JP 6025595 B2 JP6025595 B2 JP 6025595B2 JP 2013027303 A JP2013027303 A JP 2013027303A JP 2013027303 A JP2013027303 A JP 2013027303A JP 6025595 B2 JP6025595 B2 JP 6025595B2
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film
semiconductor layer
electrode
semiconductor
gate
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JP2014157893A (ja
JP2014157893A5 (enExample
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中川　直紀
直紀 中川
有輔 山縣
有輔 山縣
井上　和式
和式 井上
耕治 小田
耕治 小田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
JP2013027303A 2013-02-15 2013-02-15 薄膜トランジスタの製造方法 Active JP6025595B2 (ja)

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JP2013027303A JP6025595B2 (ja) 2013-02-15 2013-02-15 薄膜トランジスタの製造方法

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JP2013027303A JP6025595B2 (ja) 2013-02-15 2013-02-15 薄膜トランジスタの製造方法

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JP2014157893A JP2014157893A (ja) 2014-08-28
JP2014157893A5 JP2014157893A5 (enExample) 2014-11-20
JP6025595B2 true JP6025595B2 (ja) 2016-11-16

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160108944A (ko) * 2015-03-09 2016-09-21 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
JP6747247B2 (ja) * 2016-01-29 2020-08-26 日立金属株式会社 半導体装置および半導体装置の製造方法
JP6429816B2 (ja) * 2016-02-17 2018-11-28 三菱電機株式会社 薄膜トランジスタおよびその製造方法、薄膜トランジスタ基板、液晶表示装置
WO2017168594A1 (ja) * 2016-03-29 2017-10-05 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示パネル及び薄膜トランジスタの製造方法
CN107104108B (zh) * 2017-05-19 2020-08-21 京东方科技集团股份有限公司 一种阵列基板及其制作方法、平板探测器及影像设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3798133B2 (ja) * 1997-11-21 2006-07-19 株式会社アドバンスト・ディスプレイ 薄膜トランジスタおよびこれを用いた液晶表示装置並びにｔｆｔアレイ基板の製造方法
KR100303446B1 (ko) * 1998-10-29 2002-10-04 삼성전자 주식회사 액정표시장치용박막트랜지스터기판의제조방법
KR101325053B1 (ko) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5345349B2 (ja) * 2008-07-24 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5690063B2 (ja) * 2009-11-18 2015-03-25 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ
JP2012028481A (ja) * 2010-07-22 2012-02-09 Fujifilm Corp 電界効果型トランジスタ及びその製造方法
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012146956A (ja) * 2010-12-20 2012-08-02 Canon Inc チャネルエッチ型薄膜トランジスタとその製造方法
CN103270602A (zh) * 2010-12-28 2013-08-28 株式会社神户制钢所 薄膜晶体管的半导体层用氧化物及溅射靶材，以及薄膜晶体管
JP2012178493A (ja) * 2011-02-28 2012-09-13 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP5766467B2 (ja) * 2011-03-02 2015-08-19 株式会社東芝 薄膜トランジスタ及びその製造方法、表示装置

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