JP6011930B2 - シリコンウェーハの評価方法及びそのエッチング液 - Google Patents

シリコンウェーハの評価方法及びそのエッチング液 Download PDF

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Publication number
JP6011930B2
JP6011930B2 JP2012243793A JP2012243793A JP6011930B2 JP 6011930 B2 JP6011930 B2 JP 6011930B2 JP 2012243793 A JP2012243793 A JP 2012243793A JP 2012243793 A JP2012243793 A JP 2012243793A JP 6011930 B2 JP6011930 B2 JP 6011930B2
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JP
Japan
Prior art keywords
silicon wafer
etching
etching solution
lep
solution
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JP2012243793A
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English (en)
Japanese (ja)
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JP2014093457A (ja
JP2014093457A5 (https=
Inventor
善範 矢ヶ崎
善範 矢ヶ崎
典雄 大高
典雄 大高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2012243793A priority Critical patent/JP6011930B2/ja
Priority to PCT/JP2013/077069 priority patent/WO2014069156A1/ja
Priority to TW102137056A priority patent/TW201426890A/zh
Publication of JP2014093457A publication Critical patent/JP2014093457A/ja
Publication of JP2014093457A5 publication Critical patent/JP2014093457A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP2012243793A 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液 Active JP6011930B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012243793A JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液
PCT/JP2013/077069 WO2014069156A1 (ja) 2012-11-05 2013-10-04 シリコンウェーハの評価方法及びそのエッチング液
TW102137056A TW201426890A (zh) 2012-11-05 2013-10-15 矽晶圓之評價方法及其蝕刻液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012243793A JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液

Publications (3)

Publication Number Publication Date
JP2014093457A JP2014093457A (ja) 2014-05-19
JP2014093457A5 JP2014093457A5 (https=) 2014-12-04
JP6011930B2 true JP6011930B2 (ja) 2016-10-25

Family

ID=50627072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012243793A Active JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液

Country Status (3)

Country Link
JP (1) JP6011930B2 (https=)
TW (1) TW201426890A (https=)
WO (1) WO2014069156A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6179530B2 (ja) 2015-01-23 2017-08-16 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN111662717B (zh) * 2020-07-14 2021-08-31 北京航空航天大学宁波创新研究院 一种硒化铋材料的金相腐蚀液以及金相显示方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3629694B2 (ja) * 1998-02-19 2005-03-16 信越半導体株式会社 シリコンウェーハの評価方法
JP3692812B2 (ja) * 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP3651440B2 (ja) * 2002-01-16 2005-05-25 信越半導体株式会社 シリコンウェーハの評価方法及びそのエッチング液

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Publication number Publication date
JP2014093457A (ja) 2014-05-19
WO2014069156A1 (ja) 2014-05-08
TW201426890A (zh) 2014-07-01

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