TW201426890A - 矽晶圓之評價方法及其蝕刻液 - Google Patents

矽晶圓之評價方法及其蝕刻液 Download PDF

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Publication number
TW201426890A
TW201426890A TW102137056A TW102137056A TW201426890A TW 201426890 A TW201426890 A TW 201426890A TW 102137056 A TW102137056 A TW 102137056A TW 102137056 A TW102137056 A TW 102137056A TW 201426890 A TW201426890 A TW 201426890A
Authority
TW
Taiwan
Prior art keywords
wafer
etching
lep
liquid
etching solution
Prior art date
Application number
TW102137056A
Other languages
English (en)
Chinese (zh)
Inventor
矢崎善範
大高典雄
Original Assignee
信越半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導體股份有限公司 filed Critical 信越半導體股份有限公司
Publication of TW201426890A publication Critical patent/TW201426890A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
TW102137056A 2012-11-05 2013-10-15 矽晶圓之評價方法及其蝕刻液 TW201426890A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012243793A JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液

Publications (1)

Publication Number Publication Date
TW201426890A true TW201426890A (zh) 2014-07-01

Family

ID=50627072

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102137056A TW201426890A (zh) 2012-11-05 2013-10-15 矽晶圓之評價方法及其蝕刻液

Country Status (3)

Country Link
JP (1) JP6011930B2 (https=)
TW (1) TW201426890A (https=)
WO (1) WO2014069156A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6179530B2 (ja) 2015-01-23 2017-08-16 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN111662717B (zh) * 2020-07-14 2021-08-31 北京航空航天大学宁波创新研究院 一种硒化铋材料的金相腐蚀液以及金相显示方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3629694B2 (ja) * 1998-02-19 2005-03-16 信越半導体株式会社 シリコンウェーハの評価方法
JP3692812B2 (ja) * 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP3651440B2 (ja) * 2002-01-16 2005-05-25 信越半導体株式会社 シリコンウェーハの評価方法及びそのエッチング液

Also Published As

Publication number Publication date
JP2014093457A (ja) 2014-05-19
WO2014069156A1 (ja) 2014-05-08
JP6011930B2 (ja) 2016-10-25

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