JP5995698B2 - 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ - Google Patents
薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ Download PDFInfo
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- JP5995698B2 JP5995698B2 JP2012267659A JP2012267659A JP5995698B2 JP 5995698 B2 JP5995698 B2 JP 5995698B2 JP 2012267659 A JP2012267659 A JP 2012267659A JP 2012267659 A JP2012267659 A JP 2012267659A JP 5995698 B2 JP5995698 B2 JP 5995698B2
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- Prior art keywords
- oxide semiconductor
- thin film
- film transistor
- amorphous oxide
- semiconductor layer
- Prior art date
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 4
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
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- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012267659A JP5995698B2 (ja) | 2012-12-06 | 2012-12-06 | 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ |
| KR1020157014563A KR20150080613A (ko) | 2012-12-06 | 2013-11-15 | 박막 트랜지스터 및 그 제조 방법 |
| PCT/JP2013/080945 WO2014087829A1 (ja) | 2012-12-06 | 2013-11-15 | 薄膜トランジスタ及びその製造方法 |
| TW102143355A TWI601212B (zh) | 2012-12-06 | 2013-11-28 | 薄膜電晶體及其製造方法、結晶性氧化物半導體薄膜及其製造方法、顯示裝置及ｘ線感測器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012267659A JP5995698B2 (ja) | 2012-12-06 | 2012-12-06 | 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014116372A JP2014116372A (ja) | 2014-06-26 |
| JP5995698B2 true JP5995698B2 (ja) | 2016-09-21 |
Family
ID=50883254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012267659A Active JP5995698B2 (ja) | 2012-12-06 | 2012-12-06 | 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにｘ線センサ |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5995698B2 (ko) |
| KR (1) | KR20150080613A (ko) |
| TW (1) | TWI601212B (ko) |
| WO (1) | WO2014087829A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051652B (zh) * | 2014-06-19 | 2016-08-24 | 上海和辉光电有限公司 | 一种柔性薄膜晶体管 |
| EP3125296B1 (en) * | 2015-07-30 | 2020-06-10 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
| WO2017037564A1 (en) * | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor, transistor, and semiconductor device |
| US10103276B2 (en) | 2015-10-29 | 2018-10-16 | Mitsubishi Electric Corporation | Thin film transistor substrate |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713777A (en) * | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| JPH05190570A (ja) * | 1992-01-17 | 1993-07-30 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| KR100930362B1 (ko) * | 2002-11-04 | 2009-12-08 | 엘지디스플레이 주식회사 | 다결정 실리콘막 형성방법과 이를 포함한박막트랜지스터의 제조방법 |
| JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| TW200739731A (en) * | 2006-03-03 | 2007-10-16 | Jae-Sang Ro | Method for crystallization of amorphous silicon by joule heating |
| JP5324118B2 (ja) * | 2008-04-02 | 2013-10-23 | 富士フイルム株式会社 | 無機膜およびその製造方法並びに半導体デバイス |
| JP2010283233A (ja) * | 2009-06-05 | 2010-12-16 | Sharp Corp | 半導体装置、この半導体装置の製造方法、前記半導体装置を備えた画素アレイ基板、前記半導体装置を備えたセンシング素子アレイ基板、表示パネル、インプットパネル、表示装置、携帯機器、ｘ線検査装置、及びレントゲン装置 |
| KR101041144B1 (ko) * | 2009-08-13 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
| KR101073542B1 (ko) * | 2009-09-03 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR20110074327A (ko) * | 2009-12-24 | 2011-06-30 | 주식회사 엔씰텍 | 다결정 실리콘 박막 제조장치 및 제조방법 |
| JP2011159697A (ja) * | 2010-01-29 | 2011-08-18 | Dainippon Printing Co Ltd | 薄膜トランジスタ搭載基板、その製造方法及び画像表示装置 |
| US8835917B2 (en) * | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
| JP5773354B2 (ja) * | 2011-02-22 | 2015-09-02 | 国立研究開発法人産業技術総合研究所 | 透明導電膜の製造方法及び透明導電膜 |
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| Publication number | Publication date |
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| TWI601212B (zh) | 2017-10-01 |
| KR20150080613A (ko) | 2015-07-09 |
| JP2014116372A (ja) | 2014-06-26 |
| WO2014087829A1 (ja) | 2014-06-12 |
| TW201423870A (zh) | 2014-06-16 |
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