JP5995309B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP5995309B2
JP5995309B2 JP2012074400A JP2012074400A JP5995309B2 JP 5995309 B2 JP5995309 B2 JP 5995309B2 JP 2012074400 A JP2012074400 A JP 2012074400A JP 2012074400 A JP2012074400 A JP 2012074400A JP 5995309 B2 JP5995309 B2 JP 5995309B2
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layer
film
gate electrode
insulating film
metal
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Japanese (ja)
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JP2013207086A (ja
JP2013207086A5 (enExample
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俊介 倉知
俊介 倉知
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2012074400A priority Critical patent/JP5995309B2/ja
Priority to US13/850,522 priority patent/US20130256755A1/en
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Publication of JP2013207086A5 publication Critical patent/JP2013207086A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012074400A 2012-03-28 2012-03-28 半導体装置及びその製造方法 Active JP5995309B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012074400A JP5995309B2 (ja) 2012-03-28 2012-03-28 半導体装置及びその製造方法
US13/850,522 US20130256755A1 (en) 2012-03-28 2013-03-26 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012074400A JP5995309B2 (ja) 2012-03-28 2012-03-28 半導体装置及びその製造方法

Publications (3)

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JP2013207086A JP2013207086A (ja) 2013-10-07
JP2013207086A5 JP2013207086A5 (enExample) 2015-05-07
JP5995309B2 true JP5995309B2 (ja) 2016-09-21

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JP2012074400A Active JP5995309B2 (ja) 2012-03-28 2012-03-28 半導体装置及びその製造方法

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US (1) US20130256755A1 (enExample)
JP (1) JP5995309B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6133191B2 (ja) * 2013-10-18 2017-05-24 古河電気工業株式会社 窒化物半導体装置、ダイオード、および電界効果トランジスタ
JP6179445B2 (ja) * 2014-04-11 2017-08-16 豊田合成株式会社 縦型ショットキーバリアダイオード、縦型ショットキーバリアダイオードの製造方法
US10056478B2 (en) 2015-11-06 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor and manufacturing method thereof
KR102261732B1 (ko) * 2015-12-18 2021-06-09 한국전자통신연구원 전계 효과 트랜지스터
US10217827B2 (en) * 2016-05-11 2019-02-26 Rfhic Corporation High electron mobility transistor (HEMT)
TWI718300B (zh) * 2016-05-11 2021-02-11 南韓商Ｒｆｈｉｃ公司 半導體電晶體及其加工方法
JP6724685B2 (ja) * 2016-09-23 2020-07-15 住友電気工業株式会社 半導体装置
KR102044244B1 (ko) * 2016-12-13 2019-12-02 (주)웨이비스 질화물계 전자소자 및 그 제조방법
US20190148498A1 (en) * 2017-11-13 2019-05-16 Win Semiconductors Corp. Passivation Structure For GaN Field Effect Transistor
CN110277445B (zh) * 2018-03-16 2024-08-20 中国科学院上海微系统与信息技术研究所 基于AlGaN/p-GaN沟道的增强型纵向功率器件及制作方法
JP7047615B2 (ja) 2018-06-13 2022-04-05 住友電工デバイス・イノベーション株式会社 半導体デバイスの製造方法
CN112103337B (zh) * 2019-06-18 2022-02-08 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
IT201900023475A1 (it) * 2019-12-10 2021-06-10 St Microelectronics Srl Transistore hemt includente regioni di field plate e relativo processo di fabbricazione
JP7679924B2 (ja) * 2021-03-12 2025-05-20 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
US12402348B2 (en) 2021-05-20 2025-08-26 Wolfspeed, Inc. Field effect transistor with selective channel layer doping
JP7740799B2 (ja) * 2021-09-27 2025-09-17 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
CN113725283A (zh) * 2021-11-04 2021-11-30 深圳市时代速信科技有限公司 半导体器件及其制备方法
CN113793867B (zh) * 2021-11-16 2022-03-01 深圳市时代速信科技有限公司 一种电极结构及其制作方法
US20230207640A1 (en) * 2021-12-29 2023-06-29 Nxp Usa, Inc. Transistor gate structure with insulating layer and method of fabrication therefor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device
JP4221697B2 (ja) * 2002-06-17 2009-02-12 日本電気株式会社 半導体装置
US7800131B2 (en) * 2005-06-10 2010-09-21 Nec Corporation Field effect transistor
WO2008027027A2 (en) * 2005-09-07 2008-03-06 Cree, Inc Transistor with fluorine treatment
EP2065925B1 (en) * 2006-09-20 2016-04-20 Fujitsu Limited Field-effect transistor
US7985984B2 (en) * 2007-02-28 2011-07-26 Nec Corporation III-nitride semiconductor field effect transistor
US8212290B2 (en) * 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
JP2011238805A (ja) * 2010-05-11 2011-11-24 Nec Corp 電界効果トランジスタ、電界効果トランジスタの製造方法および電子装置
JP2012175089A (ja) * 2011-02-24 2012-09-10 Fujitsu Ltd 半導体装置及び半導体装置の製造方法

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JP2013207086A (ja) 2013-10-07

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