JP5977021B2 - 表面実装型圧電発振器 - Google Patents
表面実装型圧電発振器 Download PDFInfo
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- JP5977021B2 JP5977021B2 JP2011262316A JP2011262316A JP5977021B2 JP 5977021 B2 JP5977021 B2 JP 5977021B2 JP 2011262316 A JP2011262316 A JP 2011262316A JP 2011262316 A JP2011262316 A JP 2011262316A JP 5977021 B2 JP5977021 B2 JP 5977021B2
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- 229910000679 solder Inorganic materials 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 82
- 239000000919 ceramic Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000010344 co-firing Methods 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 55
- 238000010586 diagram Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 206010013647 Drowning Diseases 0.000 description 1
- 230000003187 abdominal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83104—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus by applying pressure, e.g. by injection
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Claims (5)
- 圧電振動子と、前記圧電振動子と共に発振回路を構成するICチップを搭載した実装基板とを半田ボールを用いて接合した表面実装型圧電発振器であって、
前記圧電振動子は、底壁層と、前記底壁層の一方の主面に積層して凹部を形成する枠壁層からなる容器本体を有し、前記凹部に圧電振動片を収容すると共に、その開口端を蓋体で密閉封止してなり、前記容器本体を構成する前記底壁層の他方の主面に前記実装基板と接続する端子が設けられており、
前記実装基板はセラミックシートで構成され、当該実装基板の前記圧電振動子と対向する前記一方の主面には、前記圧電振動子の端子との間で半田ボールを溶融硬化して接続された接続端子を有すると共に、前記ICチップの実装バンプを接続した電極パッドを有する配線パターンが形成されており、
前記実装基板の前記一方の主面には、前記接続端子の中央位置に前記半田ボールを配置するための半田ボール載置部開口と、前記ICチップを搭載するためのICチップ搭載部開口とを有するとともに前記配線パターンの一部に積層されて溶融半田の濡れ広がりを防止する中間層を前記実装基板と一体に成型されてなり、
前記実装基板の前記他方の主面には、電子機器に実装するための表面実装端子を備えたことを特徴とする表面実装型圧電発振器。 - 請求項1に記載の表面実装型圧電発振器の製造方法において、
前記中間層が、前記実装基板と同種のセラミックシートに前記半田ボール載置部開口と前記ICチップ搭載部開口とを形成した基板を当該実装基板と共焼成して一体化されて製造されることを特徴とする表面実装型圧電発振器の製造方法。 - 請求項1に記載の表面実装型圧電発振器の製造方法において、
前記中間層が、前記実装基板と同種のセラミック材料の微粒子を分散したセラミックペーストを当該実装基板の前記他方の主面の前記半田ボール載置部開口と前記ICチップ搭載部開口を形成して塗布したものを前記実装基板と共焼成して製造されることを特徴とする表面実装型圧電発振器の製造方法。 - 請求項1乃至3に記載の表面実装型圧電発振器の製造方法において、
前記圧電振動子の前記端子と前記実装基板の前記接続端子との間を接続する前記半田ボールの溶融硬化で形成される半田フィレットが均一な鼓形状の外観を呈して製造されることを特徴とする表面実装型圧電発振器の製造方法。 - 請求項1において、
前記圧電振動子が水晶振動子であることを特徴とする表面実装型圧電発振器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2011262316A JP5977021B2 (ja) | 2011-11-30 | 2011-11-30 | 表面実装型圧電発振器 |
US13/633,880 US20130135055A1 (en) | 2011-11-30 | 2012-10-03 | Surface mount piezoelectric oscillator |
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JP2011262316A JP5977021B2 (ja) | 2011-11-30 | 2011-11-30 | 表面実装型圧電発振器 |
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JP2013115732A JP2013115732A (ja) | 2013-06-10 |
JP5977021B2 true JP5977021B2 (ja) | 2016-08-24 |
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JP2013153412A (ja) * | 2011-12-27 | 2013-08-08 | Nippon Dempa Kogyo Co Ltd | 表面実装型圧電発振器 |
WO2013128782A1 (ja) * | 2012-02-28 | 2013-09-06 | 株式会社大真空 | 表面実装型圧電発振器 |
JP6167494B2 (ja) * | 2012-09-26 | 2017-07-26 | セイコーエプソン株式会社 | 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器 |
JP2015008272A (ja) * | 2013-05-27 | 2015-01-15 | セイコーエプソン株式会社 | 電子部品、電子機器および移動体 |
JP2015089102A (ja) * | 2013-09-24 | 2015-05-07 | 日本電波工業株式会社 | 発振器 |
JP6503169B2 (ja) * | 2014-09-03 | 2019-04-17 | 京セラ株式会社 | 圧電発振器 |
USD760230S1 (en) | 2014-09-16 | 2016-06-28 | Daishinku Corporation | Piezoelectric vibration device |
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US6316735B1 (en) * | 1996-11-08 | 2001-11-13 | Ricoh Company, Ltd. | Semiconductor chip mounting board and a semiconductor device using same board |
JPH11251723A (ja) * | 1998-02-26 | 1999-09-17 | Kyocera Corp | 回路基板 |
JP3792445B2 (ja) * | 1999-03-30 | 2006-07-05 | 日本特殊陶業株式会社 | コンデンサ付属配線基板 |
JP3882500B2 (ja) * | 2000-03-02 | 2007-02-14 | 株式会社村田製作所 | 厚膜絶縁組成物およびそれを用いたセラミック電子部品、ならびに電子装置 |
US6512182B2 (en) * | 2001-03-12 | 2003-01-28 | Ngk Spark Plug Co., Ltd. | Wiring circuit board and method for producing same |
JP2004048600A (ja) * | 2002-07-15 | 2004-02-12 | Nippon Dempa Kogyo Co Ltd | 表面実装水晶発振器 |
JP2004222206A (ja) * | 2003-01-17 | 2004-08-05 | Murata Mfg Co Ltd | 水晶発振器およびそれを用いた電子装置 |
KR100476564B1 (ko) * | 2003-01-21 | 2005-03-18 | 삼성전기주식회사 | 수정진동자 세라믹 패키지 |
JP5075401B2 (ja) * | 2006-11-30 | 2012-11-21 | 京セラクリスタルデバイス株式会社 | 圧電発振器及びその製造方法 |
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