JP5975418B2 - イオン注入方法 - Google Patents

イオン注入方法 Download PDF

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Publication number
JP5975418B2
JP5975418B2 JP2012003960A JP2012003960A JP5975418B2 JP 5975418 B2 JP5975418 B2 JP 5975418B2 JP 2012003960 A JP2012003960 A JP 2012003960A JP 2012003960 A JP2012003960 A JP 2012003960A JP 5975418 B2 JP5975418 B2 JP 5975418B2
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JP
Japan
Prior art keywords
ions
ion
integer
wafer
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012003960A
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English (en)
Japanese (ja)
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JP2012216767A5 (enExample
JP2012216767A (ja
Inventor
泰典 河村
泰典 河村
喬子 川上
喬子 川上
良樹 中島
良樹 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2012003960A priority Critical patent/JP5975418B2/ja
Priority to KR1020120029260A priority patent/KR101371957B1/ko
Priority to TW101110085A priority patent/TWI457988B/zh
Priority to US13/428,481 priority patent/US8921240B2/en
Publication of JP2012216767A publication Critical patent/JP2012216767A/ja
Publication of JP2012216767A5 publication Critical patent/JP2012216767A5/ja
Application granted granted Critical
Publication of JP5975418B2 publication Critical patent/JP5975418B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
JP2012003960A 2011-03-25 2012-01-12 イオン注入方法 Active JP5975418B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012003960A JP5975418B2 (ja) 2011-03-25 2012-01-12 イオン注入方法
KR1020120029260A KR101371957B1 (ko) 2011-03-25 2012-03-22 이온 주입 방법
TW101110085A TWI457988B (zh) 2011-03-25 2012-03-23 離子植入方法
US13/428,481 US8921240B2 (en) 2011-03-25 2012-03-23 Ion implantation method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011068307 2011-03-25
JP2011068307 2011-03-25
JP2012003960A JP5975418B2 (ja) 2011-03-25 2012-01-12 イオン注入方法

Publications (3)

Publication Number Publication Date
JP2012216767A JP2012216767A (ja) 2012-11-08
JP2012216767A5 JP2012216767A5 (enExample) 2015-02-19
JP5975418B2 true JP5975418B2 (ja) 2016-08-23

Family

ID=46877709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012003960A Active JP5975418B2 (ja) 2011-03-25 2012-01-12 イオン注入方法

Country Status (4)

Country Link
US (1) US8921240B2 (enExample)
JP (1) JP5975418B2 (enExample)
KR (1) KR101371957B1 (enExample)
TW (1) TWI457988B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4102544A1 (de) 2014-06-24 2022-12-14 EV Group E. Thallner GmbH Verfahren und vorrichtung zur oberflächenbehandlung von substraten
JP2019091923A (ja) * 2019-02-07 2019-06-13 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を表面処理するための方法及び装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4096373B2 (ja) * 1997-03-25 2008-06-04 住友電気工業株式会社 硬質被膜とその製造方法
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US6686595B2 (en) 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
JP5583344B2 (ja) * 2005-12-09 2014-09-03 セムイクウィップ・インコーポレーテッド 炭素クラスターの注入により半導体デバイスを製造するためのシステムおよび方法
US8183161B2 (en) * 2006-09-12 2012-05-22 Tokyo Electron Limited Method and system for dry etching a hafnium containing material
JP2010062529A (ja) * 2008-08-04 2010-03-18 Toshiba Corp 半導体装置の製造方法
TWI522404B (zh) * 2009-03-26 2016-02-21 Lintec Corp A molded body, a manufacturing method thereof, an electronic device element, and an electronic device
US8992785B2 (en) * 2010-01-15 2015-03-31 Tel Epion Inc. Method for modifying an etch rate of a material layer using energetic charged particles
US8343860B1 (en) * 2010-03-23 2013-01-01 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude High C content molecules for C implant

Also Published As

Publication number Publication date
KR20120109356A (ko) 2012-10-08
TWI457988B (zh) 2014-10-21
US20120244724A1 (en) 2012-09-27
TW201239957A (en) 2012-10-01
KR101371957B1 (ko) 2014-03-07
US8921240B2 (en) 2014-12-30
JP2012216767A (ja) 2012-11-08

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