TWI457988B - 離子植入方法 - Google Patents
離子植入方法 Download PDFInfo
- Publication number
- TWI457988B TWI457988B TW101110085A TW101110085A TWI457988B TW I457988 B TWI457988 B TW I457988B TW 101110085 A TW101110085 A TW 101110085A TW 101110085 A TW101110085 A TW 101110085A TW I457988 B TWI457988 B TW I457988B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- ions
- integer
- gas supply
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000005468 ion implantation Methods 0.000 title description 8
- 150000002500 ions Chemical class 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 23
- 238000001819 mass spectrum Methods 0.000 claims description 13
- 238000004458 analytical method Methods 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000009835 boiling Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 39
- 238000010884 ion-beam technique Methods 0.000 description 26
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 14
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 10
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 7
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 6
- 150000001793 charged compounds Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- -1 carbon molecular ion Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 102000004310 Ion Channels Human genes 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011068307 | 2011-03-25 | ||
| JP2012003960A JP5975418B2 (ja) | 2011-03-25 | 2012-01-12 | イオン注入方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201239957A TW201239957A (en) | 2012-10-01 |
| TWI457988B true TWI457988B (zh) | 2014-10-21 |
Family
ID=46877709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101110085A TWI457988B (zh) | 2011-03-25 | 2012-03-23 | 離子植入方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8921240B2 (enExample) |
| JP (1) | JP5975418B2 (enExample) |
| KR (1) | KR101371957B1 (enExample) |
| TW (1) | TWI457988B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078028A (zh) | 2014-06-24 | 2017-08-18 | Ev 集团 E·索尔纳有限责任公司 | 用于衬底的表面处理的方法和设备 |
| JP2019091923A (ja) * | 2019-02-07 | 2019-06-13 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板を表面処理するための方法及び装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070148888A1 (en) * | 2005-12-09 | 2007-06-28 | Krull Wade A | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| CN101511969A (zh) * | 2006-09-12 | 2009-08-19 | 东京毅力科创株式会社 | 用于干法刻蚀含铪材料的方法和系统 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4096373B2 (ja) * | 1997-03-25 | 2008-06-04 | 住友電気工業株式会社 | 硬質被膜とその製造方法 |
| US7465478B2 (en) * | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6686595B2 (en) | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
| US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
| JP2010062529A (ja) * | 2008-08-04 | 2010-03-18 | Toshiba Corp | 半導体装置の製造方法 |
| TWI522404B (zh) * | 2009-03-26 | 2016-02-21 | Lintec Corp | A molded body, a manufacturing method thereof, an electronic device element, and an electronic device |
| US8992785B2 (en) * | 2010-01-15 | 2015-03-31 | Tel Epion Inc. | Method for modifying an etch rate of a material layer using energetic charged particles |
| US8343860B1 (en) * | 2010-03-23 | 2013-01-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | High C content molecules for C implant |
-
2012
- 2012-01-12 JP JP2012003960A patent/JP5975418B2/ja active Active
- 2012-03-22 KR KR1020120029260A patent/KR101371957B1/ko active Active
- 2012-03-23 US US13/428,481 patent/US8921240B2/en not_active Expired - Fee Related
- 2012-03-23 TW TW101110085A patent/TWI457988B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070148888A1 (en) * | 2005-12-09 | 2007-06-28 | Krull Wade A | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
| CN101313395A (zh) * | 2005-12-09 | 2008-11-26 | 山米奎普公司 | 通过植入碳团簇制造半导体装置的系统和方法 |
| CN101511969A (zh) * | 2006-09-12 | 2009-08-19 | 东京毅力科创株式会社 | 用于干法刻蚀含铪材料的方法和系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012216767A (ja) | 2012-11-08 |
| US20120244724A1 (en) | 2012-09-27 |
| TW201239957A (en) | 2012-10-01 |
| US8921240B2 (en) | 2014-12-30 |
| KR101371957B1 (ko) | 2014-03-07 |
| JP5975418B2 (ja) | 2016-08-23 |
| KR20120109356A (ko) | 2012-10-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |