JP5970826B2 - 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器 - Google Patents

半導体装置、半導体装置の製造方法、固体撮像装置および電子機器 Download PDF

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JP5970826B2
JP5970826B2 JP2012008278A JP2012008278A JP5970826B2 JP 5970826 B2 JP5970826 B2 JP 5970826B2 JP 2012008278 A JP2012008278 A JP 2012008278A JP 2012008278 A JP2012008278 A JP 2012008278A JP 5970826 B2 JP5970826 B2 JP 5970826B2
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electrode
semiconductor device
element substrate
semiconductor
hole
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JP2013149745A (ja
JP2013149745A5 (https=
Inventor
悟 脇山
悟 脇山
尾崎　裕司
裕司 尾崎
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Sony Corp
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Sony Corp
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Priority to JP2012008278A priority Critical patent/JP5970826B2/ja
Priority to US13/713,398 priority patent/US9202941B2/en
Priority to CN201310010898.6A priority patent/CN103219344B/zh
Publication of JP2013149745A publication Critical patent/JP2013149745A/ja
Publication of JP2013149745A5 publication Critical patent/JP2013149745A5/ja
Priority to US14/919,920 priority patent/US9941322B2/en
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Publication of JP5970826B2 publication Critical patent/JP5970826B2/ja
Priority to US15/919,353 priority patent/US10672822B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0238—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes through pads or through electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0253—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising forming the through-semiconductor vias after stacking of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/216—Through-semiconductor vias, e.g. TSVs characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012008278A 2012-01-18 2012-01-18 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器 Expired - Fee Related JP5970826B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012008278A JP5970826B2 (ja) 2012-01-18 2012-01-18 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
US13/713,398 US9202941B2 (en) 2012-01-18 2012-12-13 Semiconductor unit, method of manufacturing the semiconductor unit, solid-state image pickup unit, and electronic apparatus
CN201310010898.6A CN103219344B (zh) 2012-01-18 2013-01-11 半导体装置及其制造方法、固态摄像装置及电子设备
US14/919,920 US9941322B2 (en) 2012-01-18 2015-10-22 Through electrode of a device substrate
US15/919,353 US10672822B2 (en) 2012-01-18 2018-03-13 Semiconductor unit, method of manufacturing the semiconductor unit, solid-state image pickup unit, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012008278A JP5970826B2 (ja) 2012-01-18 2012-01-18 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器

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JP2013149745A JP2013149745A (ja) 2013-08-01
JP2013149745A5 JP2013149745A5 (https=) 2015-02-26
JP5970826B2 true JP5970826B2 (ja) 2016-08-17

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US (3) US9202941B2 (https=)
JP (1) JP5970826B2 (https=)
CN (1) CN103219344B (https=)

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JP5970826B2 (ja) * 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
CN104412372B (zh) * 2012-06-29 2018-01-26 索尼公司 半导体装置、半导体装置的制造方法和电子设备
JP6128787B2 (ja) 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
US9312294B2 (en) 2013-10-25 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacturing thereof, and image sensor devices
JP6299406B2 (ja) * 2013-12-19 2018-03-28 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
EP2889901B1 (en) * 2013-12-27 2021-02-03 ams AG Semiconductor device with through-substrate via and corresponding method
CN104319258B (zh) * 2014-09-28 2017-08-04 武汉新芯集成电路制造有限公司 一种硅穿孔工艺
KR102400185B1 (ko) 2014-11-12 2022-05-20 삼성전자주식회사 관통전극을 갖는 반도체 소자
JP6295983B2 (ja) * 2015-03-05 2018-03-20 ソニー株式会社 半導体装置およびその製造方法、並びに電子機器
KR102441577B1 (ko) 2015-08-05 2022-09-07 삼성전자주식회사 패드 구조체를 갖는 반도체 소자
JP7013209B2 (ja) * 2016-12-14 2022-01-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP7078818B2 (ja) * 2018-01-31 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびキャリブレーション方法
WO2020035898A1 (ja) * 2018-08-13 2020-02-20 ウルトラメモリ株式会社 半導体モジュール及びその製造方法
KR102582669B1 (ko) * 2018-10-02 2023-09-25 삼성전자주식회사 이미지 센서
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CN110364544A (zh) * 2019-07-24 2019-10-22 武汉新芯集成电路制造有限公司 一种晶圆结构及其制造方法、芯片结构
US11387271B2 (en) * 2019-12-17 2022-07-12 Texas Instruments Incorporated Optical sensor with trench etched through dielectric over silicon
KR102933508B1 (ko) * 2021-09-14 2026-03-04 에스케이하이닉스 주식회사 관통전극 구조체를 포함하는 이미지 센싱 장치
TWI859721B (zh) * 2022-03-01 2024-10-21 日商村田製作所股份有限公司 電子模組

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JP5970826B2 (ja) * 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器

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Publication number Publication date
US9202941B2 (en) 2015-12-01
US20130181317A1 (en) 2013-07-18
JP2013149745A (ja) 2013-08-01
US9941322B2 (en) 2018-04-10
US20160043128A1 (en) 2016-02-11
CN103219344B (zh) 2017-04-12
US10672822B2 (en) 2020-06-02
US20180204872A1 (en) 2018-07-19
CN103219344A (zh) 2013-07-24

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