JP5964742B2 - 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス - Google Patents

半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス Download PDF

Info

Publication number
JP5964742B2
JP5964742B2 JP2012282429A JP2012282429A JP5964742B2 JP 5964742 B2 JP5964742 B2 JP 5964742B2 JP 2012282429 A JP2012282429 A JP 2012282429A JP 2012282429 A JP2012282429 A JP 2012282429A JP 5964742 B2 JP5964742 B2 JP 5964742B2
Authority
JP
Japan
Prior art keywords
semiconductor
ligand
semiconductor film
semiconductor quantum
quantum dot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012282429A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014127563A5 (enExample
JP2014127563A (ja
Inventor
雅司 小野
雅司 小野
菊池　信
信 菊池
田中　淳
淳 田中
鈴木　真之
真之 鈴木
義彦 金光
義彦 金光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2012282429A priority Critical patent/JP5964742B2/ja
Priority to PCT/JP2013/081498 priority patent/WO2014103584A1/ja
Publication of JP2014127563A publication Critical patent/JP2014127563A/ja
Priority to US14/746,114 priority patent/US10886421B2/en
Publication of JP2014127563A5 publication Critical patent/JP2014127563A5/ja
Application granted granted Critical
Publication of JP5964742B2 publication Critical patent/JP5964742B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2012282429A 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス Active JP5964742B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012282429A JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
PCT/JP2013/081498 WO2014103584A1 (ja) 2012-12-26 2013-11-22 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
US14/746,114 US10886421B2 (en) 2012-12-26 2015-06-22 Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012282429A JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Publications (3)

Publication Number Publication Date
JP2014127563A JP2014127563A (ja) 2014-07-07
JP2014127563A5 JP2014127563A5 (enExample) 2015-07-16
JP5964742B2 true JP5964742B2 (ja) 2016-08-03

Family

ID=51020678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012282429A Active JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Country Status (3)

Country Link
US (1) US10886421B2 (enExample)
JP (1) JP5964742B2 (enExample)
WO (1) WO2014103584A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014127578A (ja) * 2012-12-26 2014-07-07 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102449686B1 (ko) 2015-09-18 2022-09-30 엘지전자 주식회사 광 변환 복합체, 이를 포함하는 광 변환 부재, 표시장치 및 발광소자 패키지및 이의 제조방법
JP6959119B2 (ja) * 2017-12-04 2021-11-02 信越化学工業株式会社 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子
US11050033B2 (en) * 2018-04-24 2021-06-29 Samsung Electronics Co., Ltd. Light-emitting film, production method thereof, and a light emitting device including the same
WO2021002114A1 (ja) * 2019-07-01 2021-01-07 富士フイルム株式会社 光検出素子、光検出素子の製造方法およびイメージセンサ
JP7405850B2 (ja) * 2019-07-01 2023-12-26 富士フイルム株式会社 半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法
JP7439585B2 (ja) * 2020-03-13 2024-02-28 ａｒｔｉｅｎｃｅ株式会社 光電変換素子及び光電変換層形成用組成物
US20240032412A1 (en) * 2020-12-25 2024-01-25 Boe Technology Group Co., Ltd. Quantum dot material, light-emitting device and manufacturing method therefor, and display apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4404489B2 (ja) * 1998-09-18 2010-01-27 マサチューセッツ インスティテュート オブ テクノロジー 水溶性蛍光半導体ナノ結晶
EP1116036B1 (en) 1998-09-18 2004-08-11 Massachusetts Institute Of Technology Water-soluble fluorescent semiconductor nanocrystals
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
ATE551723T1 (de) * 2005-08-25 2012-04-15 Edward Sargent Optische quantum-dot-vorrichtungen mit erhöhter verstärkung und empfindlichkeit
CA2642169A1 (en) * 2006-02-16 2007-08-30 Solexant Corporation Nanoparticle sensitized nanostructured solar cells
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
WO2009106810A1 (en) * 2008-02-25 2009-09-03 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
US20120125781A1 (en) * 2008-12-10 2012-05-24 Zhang jin zhong Compositions and methods for synthesis of hydrogen fuel
CN102666369B (zh) * 2009-12-18 2014-08-27 株式会社村田制作所 薄膜形成方法和量子点设备
WO2011109660A2 (en) * 2010-03-04 2011-09-09 Lockheed Martin Corporation Compositions containing tin nanoparticles and methods for use thereof
GB201005601D0 (en) * 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
GB201010831D0 (en) * 2010-06-28 2010-08-11 Ct Angewandte Nanotech Can A micellular combination comprising a nanoparticle and a plurality of surfmer ligands
US20120031490A1 (en) * 2010-08-03 2012-02-09 Honeywell International Inc. Quantum dot solar cells and methods for manufacturing such solar cells
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
WO2012112821A1 (en) * 2011-02-16 2012-08-23 Sandia Solar Technologies Llc Solar absorbing films with enhanced electron mobility and methods of their preparation
KR20130067137A (ko) * 2011-12-13 2013-06-21 삼성전자주식회사 양자점-매트릭스 박막 및 그의 제조방법
US20140102536A1 (en) * 2012-03-16 2014-04-17 Nanosensing Technologies, Inc. Composite Metallic Solar Cells
JP2015537378A (ja) * 2012-10-26 2015-12-24 リサーチ トライアングル インスティテュート 溶液プロセスによる量子ドットを利用した中間帯半導体、ヘテロ接合、及び光電子デバイス、並びに関連する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014127578A (ja) * 2012-12-26 2014-07-07 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス

Also Published As

Publication number Publication date
US20150318421A1 (en) 2015-11-05
JP2014127563A (ja) 2014-07-07
WO2014103584A1 (ja) 2014-07-03
US10886421B2 (en) 2021-01-05

Similar Documents

Publication Publication Date Title
JP6177515B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP5964742B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP5995661B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
JP5964744B2 (ja) 半導体膜の製造方法
JP5955305B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
Shen et al. High-performance broadband photodetector based on monolayer MoS2 hybridized with environment-friendly CuInSe2 quantum dots
Ji et al. 1, 2-Ethanedithiol treatment for AgIn5S8/ZnS quantum dot light-emitting diodes with high brightness
Zhang et al. Antimonene quantum dot-based solid-state solar cells with enhanced performance and high stability
JP6086721B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP6008736B2 (ja) 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
CN113410320A (zh) 一种宽光谱响应光电探测器及其制备方法
Paliwal et al. Microwave-polyol synthesis of sub-10-nm PbS nanocrystals for metal oxide/nanocrystal heterojunction photodetectors
CN114774114B (zh) 一种AgBiS2量子点超晶格的制备方法及其光电探测器
Thomas et al. An inverted ZnO/P3HT: PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer
Zhao et al. Accelerated solution-phase exchanges minimize defects in colloidal quantum dot solids
CN107275488B (zh) 一种纳米晶/钙钛矿杂化材料的前驱体溶液
Gao et al. Green synthesis of highly efficient CdSe quantum dots for quantum-dots-sensitized solar cells
JP6275441B2 (ja) 半導体膜、酸化物微粒子分散液、半導体膜の製造方法、及び、薄膜トランジスタ
Jabeen et al. Grafting and co-grafting of dyes on Cd-doped ZnS nanocrystals and their application on dye-sensitized solar cells
Jabeen et al. Merocyanine-540 grafted on ZnS and CdS nanocrystals-an approach for enhancing the efficiency of inorganic-organic hybrid solar cell
Jabeen et al. Photovoltaic performance of P3HT-porphyrin functionalized 1D CdS nanostructured organic inorganic bulk heterojunction hybrid solar cells
CN114447153A (zh) CsPbBr3:ZnO QDs基MSM结构探测器、制备方法及应用
Tulsani et al. Inorganic metal iodide mediated solution phase surface passivation for quantum dot solar cell
CN115148907B (zh) 一种基于非宽禁带钙钛矿的紫外光电探测器及其制备方法
Liu Doping in perovskite nanocrystals, perovskite solar cells with organic carrier transport layers, and Selenium solar cells

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150528

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150528

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160607

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160630

R150 Certificate of patent or registration of utility model

Ref document number: 5964742

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250