JP2014127563A5 - - Google Patents

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Publication number
JP2014127563A5
JP2014127563A5 JP2012282429A JP2012282429A JP2014127563A5 JP 2014127563 A5 JP2014127563 A5 JP 2014127563A5 JP 2012282429 A JP2012282429 A JP 2012282429A JP 2012282429 A JP2012282429 A JP 2012282429A JP 2014127563 A5 JP2014127563 A5 JP 2014127563A5
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JP
Japan
Prior art keywords
semiconductor film
film according
ligand
semiconductor
semiconductor quantum
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JP2012282429A
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English (en)
Japanese (ja)
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JP5964742B2 (ja
JP2014127563A (ja
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Priority to JP2012282429A priority Critical patent/JP5964742B2/ja
Priority claimed from JP2012282429A external-priority patent/JP5964742B2/ja
Priority to PCT/JP2013/081498 priority patent/WO2014103584A1/ja
Publication of JP2014127563A publication Critical patent/JP2014127563A/ja
Priority to US14/746,114 priority patent/US10886421B2/en
Publication of JP2014127563A5 publication Critical patent/JP2014127563A5/ja
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Publication of JP5964742B2 publication Critical patent/JP5964742B2/ja
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JP2012282429A 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス Active JP5964742B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012282429A JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
PCT/JP2013/081498 WO2014103584A1 (ja) 2012-12-26 2013-11-22 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
US14/746,114 US10886421B2 (en) 2012-12-26 2015-06-22 Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012282429A JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Publications (3)

Publication Number Publication Date
JP2014127563A JP2014127563A (ja) 2014-07-07
JP2014127563A5 true JP2014127563A5 (enExample) 2015-07-16
JP5964742B2 JP5964742B2 (ja) 2016-08-03

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ID=51020678

Family Applications (1)

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JP2012282429A Active JP5964742B2 (ja) 2012-12-26 2012-12-26 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス

Country Status (3)

Country Link
US (1) US10886421B2 (enExample)
JP (1) JP5964742B2 (enExample)
WO (1) WO2014103584A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6008736B2 (ja) * 2012-12-26 2016-10-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
KR102449686B1 (ko) 2015-09-18 2022-09-30 엘지전자 주식회사 광 변환 복합체, 이를 포함하는 광 변환 부재, 표시장치 및 발광소자 패키지및 이의 제조방법
JP6959119B2 (ja) * 2017-12-04 2021-11-02 信越化学工業株式会社 量子ドット及びその製造方法、並びに樹脂組成物、波長変換材料、発光素子
US11050033B2 (en) * 2018-04-24 2021-06-29 Samsung Electronics Co., Ltd. Light-emitting film, production method thereof, and a light emitting device including the same
WO2021002114A1 (ja) * 2019-07-01 2021-01-07 富士フイルム株式会社 光検出素子、光検出素子の製造方法およびイメージセンサ
JP7405850B2 (ja) * 2019-07-01 2023-12-26 富士フイルム株式会社 半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法
JP7439585B2 (ja) * 2020-03-13 2024-02-28 artience株式会社 光電変換素子及び光電変換層形成用組成物
US20240032412A1 (en) * 2020-12-25 2024-01-25 Boe Technology Group Co., Ltd. Quantum dot material, light-emitting device and manufacturing method therefor, and display apparatus

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4404489B2 (ja) * 1998-09-18 2010-01-27 マサチューセッツ インスティテュート オブ テクノロジー 水溶性蛍光半導体ナノ結晶
EP1116036B1 (en) 1998-09-18 2004-08-11 Massachusetts Institute Of Technology Water-soluble fluorescent semiconductor nanocrystals
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
ATE551723T1 (de) * 2005-08-25 2012-04-15 Edward Sargent Optische quantum-dot-vorrichtungen mit erhöhter verstärkung und empfindlichkeit
CA2642169A1 (en) * 2006-02-16 2007-08-30 Solexant Corporation Nanoparticle sensitized nanostructured solar cells
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
WO2009106810A1 (en) * 2008-02-25 2009-09-03 Nanoco Technologies Limited Semiconductor nanoparticle capping agents
US20120125781A1 (en) * 2008-12-10 2012-05-24 Zhang jin zhong Compositions and methods for synthesis of hydrogen fuel
CN102666369B (zh) * 2009-12-18 2014-08-27 株式会社村田制作所 薄膜形成方法和量子点设备
WO2011109660A2 (en) * 2010-03-04 2011-09-09 Lockheed Martin Corporation Compositions containing tin nanoparticles and methods for use thereof
GB201005601D0 (en) * 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
GB201010831D0 (en) * 2010-06-28 2010-08-11 Ct Angewandte Nanotech Can A micellular combination comprising a nanoparticle and a plurality of surfmer ligands
US20120031490A1 (en) * 2010-08-03 2012-02-09 Honeywell International Inc. Quantum dot solar cells and methods for manufacturing such solar cells
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
WO2012112821A1 (en) * 2011-02-16 2012-08-23 Sandia Solar Technologies Llc Solar absorbing films with enhanced electron mobility and methods of their preparation
KR20130067137A (ko) * 2011-12-13 2013-06-21 삼성전자주식회사 양자점-매트릭스 박막 및 그의 제조방법
US20140102536A1 (en) * 2012-03-16 2014-04-17 Nanosensing Technologies, Inc. Composite Metallic Solar Cells
JP2015537378A (ja) * 2012-10-26 2015-12-24 リサーチ トライアングル インスティテュート 溶液プロセスによる量子ドットを利用した中間帯半導体、ヘテロ接合、及び光電子デバイス、並びに関連する方法

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