JP5963450B2 - 撮像装置および撮像システム - Google Patents

撮像装置および撮像システム Download PDF

Info

Publication number
JP5963450B2
JP5963450B2 JP2012008202A JP2012008202A JP5963450B2 JP 5963450 B2 JP5963450 B2 JP 5963450B2 JP 2012008202 A JP2012008202 A JP 2012008202A JP 2012008202 A JP2012008202 A JP 2012008202A JP 5963450 B2 JP5963450 B2 JP 5963450B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion unit
transistor
power supply
conductive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012008202A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013149742A5 (enExample
JP2013149742A (ja
Inventor
和田　洋一
洋一 和田
小林　昌弘
昌弘 小林
道子 ジョンソン
道子 ジョンソン
宏政 坪井
宏政 坪井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012008202A priority Critical patent/JP5963450B2/ja
Priority to US13/742,142 priority patent/US8780244B2/en
Priority to CN201310017553.3A priority patent/CN103219345B/zh
Publication of JP2013149742A publication Critical patent/JP2013149742A/ja
Publication of JP2013149742A5 publication Critical patent/JP2013149742A5/ja
Application granted granted Critical
Publication of JP5963450B2 publication Critical patent/JP5963450B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012008202A 2012-01-18 2012-01-18 撮像装置および撮像システム Active JP5963450B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012008202A JP5963450B2 (ja) 2012-01-18 2012-01-18 撮像装置および撮像システム
US13/742,142 US8780244B2 (en) 2012-01-18 2013-01-15 Image pickup apparatus and image pickup system
CN201310017553.3A CN103219345B (zh) 2012-01-18 2013-01-17 图像拾取装置和图像拾取系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012008202A JP5963450B2 (ja) 2012-01-18 2012-01-18 撮像装置および撮像システム

Publications (3)

Publication Number Publication Date
JP2013149742A JP2013149742A (ja) 2013-08-01
JP2013149742A5 JP2013149742A5 (enExample) 2015-03-05
JP5963450B2 true JP5963450B2 (ja) 2016-08-03

Family

ID=48779718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012008202A Active JP5963450B2 (ja) 2012-01-18 2012-01-18 撮像装置および撮像システム

Country Status (3)

Country Link
US (1) US8780244B2 (enExample)
JP (1) JP5963450B2 (enExample)
CN (1) CN103219345B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6121837B2 (ja) * 2013-08-02 2017-04-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP6537838B2 (ja) 2015-01-30 2019-07-03 ルネサスエレクトロニクス株式会社 撮像素子
CN104767944B (zh) * 2015-04-14 2017-12-22 中国电子科技集团公司第四十四研究所 能提高输出一致性的多抽头emccd放大电路
JP2017045873A (ja) * 2015-08-27 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2017059563A (ja) * 2015-09-14 2017-03-23 ルネサスエレクトロニクス株式会社 撮像素子
JP2017120975A (ja) * 2015-12-28 2017-07-06 ルネサスエレクトロニクス株式会社 撮像素子
JP6776079B2 (ja) * 2016-09-27 2020-10-28 東芝情報システム株式会社 固体撮像素子及びその製造方法
JP2018113521A (ja) * 2017-01-10 2018-07-19 キヤノン株式会社 固体撮像装置及び撮像システム
WO2018207345A1 (ja) * 2017-05-12 2018-11-15 オリンパス株式会社 固体撮像装置
US11955494B2 (en) 2019-05-21 2024-04-09 Sony Semiconductor Solutions Corporation Power supply contact sharing for imaging devices
KR20250026251A (ko) * 2022-06-24 2025-02-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자 및 촬상 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9505305D0 (en) * 1995-03-16 1995-05-03 Philips Electronics Uk Ltd Electronic devices comprising an array
US6160281A (en) * 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
JP2001250931A (ja) 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4500434B2 (ja) * 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP2004241498A (ja) * 2003-02-04 2004-08-26 Mitsubishi Electric Corp 固体撮像素子とその動作方法
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
US7755116B2 (en) * 2004-12-30 2010-07-13 Ess Technology, Inc. Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP3996618B1 (ja) * 2006-05-11 2007-10-24 総吉 廣津 半導体撮像素子
JP4759590B2 (ja) * 2008-05-09 2011-08-31 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
JP2010273095A (ja) * 2009-05-21 2010-12-02 Renesas Electronics Corp 撮像装置

Also Published As

Publication number Publication date
JP2013149742A (ja) 2013-08-01
CN103219345B (zh) 2015-12-02
US8780244B2 (en) 2014-07-15
CN103219345A (zh) 2013-07-24
US20130182159A1 (en) 2013-07-18

Similar Documents

Publication Publication Date Title
JP5963450B2 (ja) 撮像装置および撮像システム
JP5936364B2 (ja) 撮像装置、及び撮像装置を含む撮像システム
US12336318B2 (en) Image sensor and electronic apparatus including the same
US20200236313A1 (en) Image sensor including at least one autofocusing pixel and at least one normal pixel and driving method thereof
JP5864990B2 (ja) 固体撮像装置およびカメラ
KR101691660B1 (ko) 촬상 장치
US9502451B2 (en) Imaging device having electrode overlying photoelectric conversion layer and having electrical contact to electrode
TWI502732B (zh) 固態影像拾取元件及影像拾取裝置
EP2980852B1 (en) Solid-state image sensing element and imaging system
JP2000236416A (ja) 六角格子状にレイアウトされた方形読出し層を有するアモルファスシリコン能動画素センサ
JP6366285B2 (ja) 固体撮像装置
JP2007095917A (ja) 固体撮像装置
JP2016058818A (ja) 撮像装置及び撮像システム
JP2013149742A5 (enExample)
US8803598B2 (en) Solid-state imaging device
JP2010245100A (ja) 固体撮像素子
KR20130024740A (ko) 고체 촬상 장치
JP3684169B2 (ja) 固体撮像装置
JP5659759B2 (ja) 固体撮像装置
JP2015204381A (ja) 固体撮像装置及びカメラ
JP6178835B2 (ja) 固体撮像装置およびカメラ
JP5515372B2 (ja) 固体撮像素子
JP2009110999A (ja) 固体撮像素子
JP2017212456A (ja) 固体撮像装置およびカメラ
JP2010225769A (ja) 固体撮像素子及び撮像装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151006

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160531

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160628

R151 Written notification of patent or utility model registration

Ref document number: 5963450

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151