CN103219345B - 图像拾取装置和图像拾取系统 - Google Patents
图像拾取装置和图像拾取系统 Download PDFInfo
- Publication number
- CN103219345B CN103219345B CN201310017553.3A CN201310017553A CN103219345B CN 103219345 B CN103219345 B CN 103219345B CN 201310017553 A CN201310017553 A CN 201310017553A CN 103219345 B CN103219345 B CN 103219345B
- Authority
- CN
- China
- Prior art keywords
- photoelectric conversion
- conversion unit
- transistor
- supply line
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000006243 chemical reaction Methods 0.000 claims description 336
- 239000004065 semiconductor Substances 0.000 claims description 132
- 238000005036 potential barrier Methods 0.000 claims description 51
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- 239000003086 colorant Substances 0.000 description 20
- 238000002955 isolation Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000005669 field effect Effects 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
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- 238000009792 diffusion process Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-008202 | 2012-01-18 | ||
| JP2012008202A JP5963450B2 (ja) | 2012-01-18 | 2012-01-18 | 撮像装置および撮像システム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103219345A CN103219345A (zh) | 2013-07-24 |
| CN103219345B true CN103219345B (zh) | 2015-12-02 |
Family
ID=48779718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310017553.3A Active CN103219345B (zh) | 2012-01-18 | 2013-01-17 | 图像拾取装置和图像拾取系统 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8780244B2 (enExample) |
| JP (1) | JP5963450B2 (enExample) |
| CN (1) | CN103219345B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6121837B2 (ja) * | 2013-08-02 | 2017-04-26 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| JP6537838B2 (ja) * | 2015-01-30 | 2019-07-03 | ルネサスエレクトロニクス株式会社 | 撮像素子 |
| CN104767944B (zh) * | 2015-04-14 | 2017-12-22 | 中国电子科技集团公司第四十四研究所 | 能提高输出一致性的多抽头emccd放大电路 |
| JP2017045873A (ja) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2017059563A (ja) * | 2015-09-14 | 2017-03-23 | ルネサスエレクトロニクス株式会社 | 撮像素子 |
| JP2017120975A (ja) * | 2015-12-28 | 2017-07-06 | ルネサスエレクトロニクス株式会社 | 撮像素子 |
| JP6776079B2 (ja) * | 2016-09-27 | 2020-10-28 | 東芝情報システム株式会社 | 固体撮像素子及びその製造方法 |
| JP2018113521A (ja) * | 2017-01-10 | 2018-07-19 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
| WO2018207345A1 (ja) * | 2017-05-12 | 2018-11-15 | オリンパス株式会社 | 固体撮像装置 |
| US11955494B2 (en) | 2019-05-21 | 2024-04-09 | Sony Semiconductor Solutions Corporation | Power supply contact sharing for imaging devices |
| KR20250026251A (ko) * | 2022-06-24 | 2025-02-25 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자 및 촬상 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527393B (zh) * | 2003-03-07 | 2010-12-08 | 松下电器产业株式会社 | 固态成像装置 |
| CN102017153A (zh) * | 2008-05-09 | 2011-04-13 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9505305D0 (en) * | 1995-03-16 | 1995-05-03 | Philips Electronics Uk Ltd | Electronic devices comprising an array |
| US6160281A (en) * | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
| US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
| JP2001250931A (ja) | 2000-03-07 | 2001-09-14 | Canon Inc | 固体撮像装置およびこれを用いた撮像システム |
| JP4500434B2 (ja) * | 2000-11-28 | 2010-07-14 | キヤノン株式会社 | 撮像装置及び撮像システム、並びに撮像方法 |
| JP2004241498A (ja) * | 2003-02-04 | 2004-08-26 | Mitsubishi Electric Corp | 固体撮像素子とその動作方法 |
| US7755116B2 (en) * | 2004-12-30 | 2010-07-13 | Ess Technology, Inc. | Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate |
| JP4752447B2 (ja) * | 2005-10-21 | 2011-08-17 | ソニー株式会社 | 固体撮像装置およびカメラ |
| JP3996618B1 (ja) * | 2006-05-11 | 2007-10-24 | 総吉 廣津 | 半導体撮像素子 |
| JP5408954B2 (ja) * | 2008-10-17 | 2014-02-05 | キヤノン株式会社 | 撮像装置、及び撮像システム |
| JP2010273095A (ja) * | 2009-05-21 | 2010-12-02 | Renesas Electronics Corp | 撮像装置 |
-
2012
- 2012-01-18 JP JP2012008202A patent/JP5963450B2/ja active Active
-
2013
- 2013-01-15 US US13/742,142 patent/US8780244B2/en active Active
- 2013-01-17 CN CN201310017553.3A patent/CN103219345B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527393B (zh) * | 2003-03-07 | 2010-12-08 | 松下电器产业株式会社 | 固态成像装置 |
| CN102017153A (zh) * | 2008-05-09 | 2011-04-13 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013149742A (ja) | 2013-08-01 |
| CN103219345A (zh) | 2013-07-24 |
| JP5963450B2 (ja) | 2016-08-03 |
| US8780244B2 (en) | 2014-07-15 |
| US20130182159A1 (en) | 2013-07-18 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |