JP5955537B2 - タイリング可能なセンサアレイ - Google Patents

タイリング可能なセンサアレイ Download PDF

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Publication number
JP5955537B2
JP5955537B2 JP2011252145A JP2011252145A JP5955537B2 JP 5955537 B2 JP5955537 B2 JP 5955537B2 JP 2011252145 A JP2011252145 A JP 2011252145A JP 2011252145 A JP2011252145 A JP 2011252145A JP 5955537 B2 JP5955537 B2 JP 5955537B2
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JP
Japan
Prior art keywords
sensor
array
contact pads
substrate
sensor array
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Active
Application number
JP2011252145A
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English (en)
Japanese (ja)
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JP2012118060A (ja
JP2012118060A5 (enExample
Inventor
ジョン・エリック・カジック
ロウェル・スコット・スミス
チャールズ・エドワード・バウムガートナー
ロバート・ギデオン・ウォドニキ
ライェット・アン・フィッシャー
チャールズ・ジェラルド・ウォイチック
ロバート・スティーブン・レワンドウスキ
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General Electric Co
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General Electric Co
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Publication of JP2012118060A5 publication Critical patent/JP2012118060A5/ja
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Surgery (AREA)
  • Biophysics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Gynecology & Obstetrics (AREA)
  • Medical Informatics (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Micromachines (AREA)
JP2011252145A 2010-11-30 2011-11-18 タイリング可能なセンサアレイ Active JP5955537B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/956,194 US8659148B2 (en) 2010-11-30 2010-11-30 Tileable sensor array
US12/956,194 2010-11-30

Publications (3)

Publication Number Publication Date
JP2012118060A JP2012118060A (ja) 2012-06-21
JP2012118060A5 JP2012118060A5 (enExample) 2014-12-25
JP5955537B2 true JP5955537B2 (ja) 2016-07-20

Family

ID=46052454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011252145A Active JP5955537B2 (ja) 2010-11-30 2011-11-18 タイリング可能なセンサアレイ

Country Status (3)

Country Link
US (1) US8659148B2 (enExample)
JP (1) JP5955537B2 (enExample)
FR (1) FR2968124A1 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8922021B2 (en) 2011-12-30 2014-12-30 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
US9576919B2 (en) 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US10373870B2 (en) 2010-02-16 2019-08-06 Deca Technologies Inc. Semiconductor device and method of packaging
US9177926B2 (en) 2011-12-30 2015-11-03 Deca Technologies Inc Semiconductor device and method comprising thickened redistribution layers
DE102011012989B4 (de) * 2011-03-03 2019-05-02 Ketek Gmbh Sensorkopf für einen Röntgendetektor
TW201320266A (zh) * 2011-11-11 2013-05-16 精材科技股份有限公司 半導體封裝件及其製法
US9831170B2 (en) 2011-12-30 2017-11-28 Deca Technologies, Inc. Fully molded miniaturized semiconductor module
US10672624B2 (en) 2011-12-30 2020-06-02 Deca Technologies Inc. Method of making fully molded peripheral package on package device
WO2013102146A1 (en) 2011-12-30 2013-07-04 Deca Technologies, Inc. Die up fully molded fan-out wafer level packaging
US10050004B2 (en) 2015-11-20 2018-08-14 Deca Technologies Inc. Fully molded peripheral package on package device
US9613830B2 (en) 2011-12-30 2017-04-04 Deca Technologies Inc. Fully molded peripheral package on package device
US20140005527A1 (en) * 2012-06-29 2014-01-02 General Electric Company Method and system for dynamic referencing and registration used with surgical and interventional procedures
US9237648B2 (en) 2013-02-25 2016-01-12 Invensas Corporation Carrier-less silicon interposer
US9354186B2 (en) * 2013-03-13 2016-05-31 Texas Instruments Incorporated X-ray sensor and signal processing assembly for an X-ray computed tomography machine
US10246322B2 (en) * 2013-03-15 2019-04-02 Versana Micro Inc. Distributed sensor system
US20140321601A1 (en) * 2013-04-26 2014-10-30 Texas Instruments Incorporated Active shield for x-ray computed tomography machine
JP5424371B1 (ja) 2013-05-08 2014-02-26 誠 雫石 固体撮像素子及び撮像装置
JP2014236183A (ja) * 2013-06-05 2014-12-15 株式会社東芝 イメージセンサ装置及びその製造方法
WO2015012866A1 (en) * 2013-07-26 2015-01-29 Analogic Corporation Detector unit for detector array of radiation imaging modality
GB2516872A (en) 2013-08-02 2015-02-11 Ibm A method for a logging process in a data storage system
JP6177663B2 (ja) * 2013-10-30 2017-08-09 株式会社日立製作所 Ｘ線透過像撮像装置
EP2950345A1 (en) * 2014-05-28 2015-12-02 ams AG Large-area image sensor module and method of producing a large-area image sensor
US10660612B2 (en) 2014-07-10 2020-05-26 Samsung Electronics Co., Ltd. Ultrasound probe and ultrasound imaging device
DE102014213734B4 (de) * 2014-07-15 2021-01-21 Siemens Healthcare Gmbh Bildgebende Vorrichtung für elektromagnetische Strahlung
CN105765406B (zh) 2014-09-26 2018-01-05 皇家飞利浦有限公司 具有加热设备的辐射探测器
CN106662661B (zh) * 2014-10-31 2019-06-25 皇家飞利浦有限公司 用于探测辐射信号的传感器设备和成像系统
US9360318B1 (en) * 2014-12-23 2016-06-07 Compass Technology Company Limited Gyro MEMS sensor package
JP6693068B2 (ja) * 2015-03-12 2020-05-13 ソニー株式会社 固体撮像装置および製造方法、並びに電子機器
SG11201707508PA (en) 2015-04-07 2017-10-30 Shenzhen Xpectvision Tech Co Ltd Semiconductor x-ray detector
CN107533145B (zh) 2015-04-07 2019-03-19 深圳帧观德芯科技有限公司 制作半导体x射线检测器的方法
US9437536B1 (en) 2015-05-08 2016-09-06 Invensas Corporation Reversed build-up substrate for 2.5D
CN107850678B (zh) * 2015-07-17 2021-05-18 模拟技术公司 用于辐射成像模态装置的探测器阵列的探测器单元
US9751108B2 (en) * 2015-07-31 2017-09-05 Texas Instruments Incorporated Extended range ultrasound transducer
US10211160B2 (en) * 2015-09-08 2019-02-19 Invensas Corporation Microelectronic assembly with redistribution structure formed on carrier
WO2017059573A1 (en) * 2015-10-09 2017-04-13 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor x-ray detectors
KR20170086886A (ko) * 2016-01-19 2017-07-27 삼성메디슨 주식회사 초음파 프로브 및 그 제조 방법
DE102016201808A1 (de) * 2016-02-05 2017-08-10 Siemens Healthcare Gmbh Röntgendetektor
US11924573B2 (en) * 2016-03-15 2024-03-05 Trustees Of Dartmouth College Stacked backside-illuminated quanta image sensor with cluster-parallel readout
AU2017281280B2 (en) * 2016-06-20 2022-01-06 Butterfly Network, Inc. Electrical contact arrangement for microfabricated ultrasonic transducer
JP6712917B2 (ja) * 2016-07-14 2020-06-24 株式会社日立製作所 半導体センサチップアレイ、および超音波診断装置
TWI800487B (zh) * 2016-09-09 2023-05-01 日商索尼半導體解決方案公司 固體攝像元件及製造方法、以及電子機器
DE102016221481B4 (de) 2016-11-02 2021-09-16 Siemens Healthcare Gmbh Strahlungsdetektor mit einer Zwischenschicht
JP2018078274A (ja) * 2016-11-10 2018-05-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． イメージセンサー装置及びそれを含むイメージセンサーモジュール
MY191543A (en) * 2016-12-29 2022-06-30 Intel Corp Programmable redistribution die
WO2018133093A1 (en) * 2017-01-23 2018-07-26 Shenzhen Xpectvision Technology Co., Ltd. Methods of making semiconductor x-ray detector
EP3355342A1 (en) * 2017-01-27 2018-08-01 Detection Technology Oy Laser assisted solder bonding of direct conversion compound semiconductor detector
EP3376261B1 (de) 2017-03-15 2020-04-29 Siemens Healthcare GmbH Röntgendetektor aufweisend ein konverterelement mit umverdrahtungseinheit
WO2018175564A1 (en) * 2017-03-21 2018-09-27 The Charles Stark Draper Laboratory, Inc. Neuromorphic digital focal plane array
DE102017206105A1 (de) * 2017-04-10 2018-10-11 Robert Bosch Gmbh Verfahren zum Herstellen eines elektronischen Steuermoduls
JP6928746B2 (ja) * 2017-04-10 2021-09-01 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
EP3444843B8 (en) 2017-08-14 2021-03-24 ams International AG Assembly for detecting electromagnetic radiation and method of producing an assembly for detecting electromagnetic radiation
DE102018200845B4 (de) * 2018-01-19 2021-05-06 Siemens Healthcare Gmbh Montageverfahren für die Herstellung eines Röntgendetektors, Röntgendetektor und Röntgengerät
WO2019152340A1 (en) * 2018-01-30 2019-08-08 Butterfly Network, Inc. Methods and apparatuses for packaging an ultrasound-on-a-chip
US11067707B2 (en) * 2018-05-07 2021-07-20 Redlen Technologies, Inc. Four-side buttable radiation detector unit and method of making thereof
US10693020B2 (en) * 2018-06-01 2020-06-23 Tt Electronics Plc Semiconductor device package and method for use thereof
EP3620826A1 (en) * 2018-09-10 2020-03-11 Koninklijke Philips N.V. Multi-piece mono-layer radiation detector
US11062975B2 (en) * 2018-09-27 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structures
US11498096B2 (en) * 2018-11-06 2022-11-15 Siemens Medical Solutions Usa, Inc. Chip-on-array with interposer for a multidimensional transducer array
EP3719841B1 (en) * 2019-04-01 2022-02-16 Detection Technology Oy Radiation sensor element and method
US11056453B2 (en) 2019-06-18 2021-07-06 Deca Technologies Usa, Inc. Stackable fully molded semiconductor structure with vertical interconnects
CN114007510A (zh) 2019-07-09 2022-02-01 雫石诚 医疗车辆、ct装置及驱动方法
JP2020008587A (ja) * 2019-08-01 2020-01-16 シェンゼン・エクスペクトビジョン・テクノロジー・カンパニー・リミテッド 半導体ｘ線検出器の製造方法
US12109591B2 (en) * 2019-09-09 2024-10-08 GE Precision Healthcare LLC Ultrasound transducer array architecture and method of manufacture
JP2023510931A (ja) * 2020-01-17 2023-03-15 ザ ユニヴァーシティ オブ ブリティッシュ コロンビア 柔軟な静電容量型微細加工超音波振動子アレイ
WO2021148603A1 (en) * 2020-01-22 2021-07-29 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. A semiconductor photomultiplier module comprising a stacked configuration of a sensor chip and electronic readout chips
KR102736602B1 (ko) * 2020-02-10 2024-12-02 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
FR3112423A1 (fr) * 2020-07-09 2022-01-14 Trixell Procédé de réalisation d’un imageur
CN114070235A (zh) * 2020-08-06 2022-02-18 联华电子股份有限公司 半导体模块及其制造方法
WO2022101313A1 (en) * 2020-11-13 2022-05-19 Ams-Osram Ag Module assembly for detection of x-ray radiation
US12261186B2 (en) * 2021-03-25 2025-03-25 Raytheon Company Mosaic focal plane array
US11728248B2 (en) 2021-07-01 2023-08-15 Deca Technologies Usa, Inc. Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects
WO2023101702A1 (en) * 2021-12-01 2023-06-08 Siemens Medical Solutions Usa, Inc. Interposer for semiconductor-based single photon emission computed tomography detector
DE102022209402A1 (de) * 2022-09-09 2024-03-14 Carl Zeiss Smt Gmbh Mikroelektromechanische Vorrichtung
WO2024161240A1 (en) * 2023-02-01 2024-08-08 Darkvision Technologies Inc. Method and apparatus for packaging system circuity and a transducer array
JP2024126285A (ja) 2023-03-07 2024-09-20 キヤノン株式会社 放射線検出装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099128A (en) * 1989-03-17 1992-03-24 Roger Stettner High resolution position sensitive detector
JPH05207341A (ja) * 1992-01-30 1993-08-13 Sony Corp カメラの光学ブロック着脱装置
US7282382B2 (en) 2001-10-29 2007-10-16 Stmicroelectronics N.V. Method for producing a photodiode contact for a TFA image sensor
JP4237966B2 (ja) * 2002-03-08 2009-03-11 浜松ホトニクス株式会社 検出器
JP4364514B2 (ja) * 2003-01-08 2009-11-18 浜松ホトニクス株式会社 配線基板、及びそれを用いた放射線検出器
JP2005026419A (ja) * 2003-07-01 2005-01-27 Toshiba Corp 半導体放射線検出器及びこれを用いた画像診断装置
US20050098732A1 (en) 2003-11-10 2005-05-12 Ls Technologies, Inc. Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays
US7289336B2 (en) 2004-10-28 2007-10-30 General Electric Company Electronic packaging and method of making the same
US20080068815A1 (en) 2006-09-18 2008-03-20 Oliver Richard Astley Interface Assembly And Method for Integrating A Data Acquisition System on a Sensor Array
JP5175853B2 (ja) 2006-09-25 2013-04-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ フリップチップ相互接続貫通チップビア
US7423335B2 (en) * 2006-12-29 2008-09-09 Advanced Chip Engineering Technology Inc. Sensor module package structure and method of the same
US7606346B2 (en) 2007-01-04 2009-10-20 General Electric Company CT detector module construction

Also Published As

Publication number Publication date
FR2968124A1 (fr) 2012-06-01
JP2012118060A (ja) 2012-06-21
US20120133001A1 (en) 2012-05-31
US8659148B2 (en) 2014-02-25

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