JP5949622B2 - サファイア単結晶育成用坩堝 - Google Patents
サファイア単結晶育成用坩堝 Download PDFInfo
- Publication number
- JP5949622B2 JP5949622B2 JP2013064539A JP2013064539A JP5949622B2 JP 5949622 B2 JP5949622 B2 JP 5949622B2 JP 2013064539 A JP2013064539 A JP 2013064539A JP 2013064539 A JP2013064539 A JP 2013064539A JP 5949622 B2 JP5949622 B2 JP 5949622B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- sapphire single
- sapphire
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims description 156
- 239000010980 sapphire Substances 0.000 title claims description 156
- 239000013078 crystal Substances 0.000 title claims description 137
- 238000000034 method Methods 0.000 claims description 45
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 32
- 238000002844 melting Methods 0.000 claims description 31
- 230000008018 melting Effects 0.000 claims description 31
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 26
- 229910052721 tungsten Inorganic materials 0.000 claims description 26
- 239000010937 tungsten Substances 0.000 claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 22
- 230000003746 surface roughness Effects 0.000 claims description 16
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 10
- 229910001080 W alloy Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 229910052741 iridium Inorganic materials 0.000 description 11
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 229910052702 rhenium Inorganic materials 0.000 description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000011197 physicochemical method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 tantalum and rhenium Chemical class 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013064539A JP5949622B2 (ja) | 2013-03-26 | 2013-03-26 | サファイア単結晶育成用坩堝 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013064539A JP5949622B2 (ja) | 2013-03-26 | 2013-03-26 | サファイア単結晶育成用坩堝 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014189425A JP2014189425A (ja) | 2014-10-06 |
| JP2014189425A5 JP2014189425A5 (enrdf_load_stackoverflow) | 2015-12-03 |
| JP5949622B2 true JP5949622B2 (ja) | 2016-07-13 |
Family
ID=51836067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013064539A Expired - Fee Related JP5949622B2 (ja) | 2013-03-26 | 2013-03-26 | サファイア単結晶育成用坩堝 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5949622B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105102648A (zh) * | 2013-03-21 | 2015-11-25 | 联合材料公司 | 蓝宝石单晶生长用坩埚和蓝宝石单晶生长方法 |
| JP6834618B2 (ja) * | 2017-03-09 | 2021-02-24 | 住友金属鉱山株式会社 | 単結晶育成用坩堝および単結晶育成方法 |
| CN109722633B (zh) * | 2017-10-31 | 2021-07-06 | 上海和辉光电股份有限公司 | 一种坩埚及蒸镀装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI519685B (zh) * | 2009-07-22 | 2016-02-01 | 國立大學法人信州大學 | 藍寶石單結晶之製造方法以及藍寶石單結晶之製造裝置 |
| JP5689598B2 (ja) * | 2009-12-15 | 2015-03-25 | 株式会社東芝 | タングステンモリブデン合金製ルツボの製造方法 |
-
2013
- 2013-03-26 JP JP2013064539A patent/JP5949622B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014189425A (ja) | 2014-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2733239B1 (en) | Sic single crystal and manufacturing process therefor | |
| JP5947389B2 (ja) | サファイア単結晶育成用坩堝およびサファイア単結晶育成用坩堝の製造方法 | |
| KR20120013300A (ko) | 실리콘 단결정 인상용의 석영 유리 도가니 및 실리콘 단결정의 제조방법 | |
| JP5949622B2 (ja) | サファイア単結晶育成用坩堝 | |
| JPWO2012124596A1 (ja) | 多結晶シリコンウエハ | |
| JP2012193423A (ja) | Ｃｕ−Ｇａ合金材およびその製造方法 | |
| CN105102648A (zh) | 蓝宝石单晶生长用坩埚和蓝宝石单晶生长方法 | |
| KR101074304B1 (ko) | 금속 실리콘과 그 제조 방법 | |
| TWI580827B (zh) | Sapphire single crystal nucleus and its manufacturing method | |
| JP2009120453A (ja) | 酸化アルミニウム単結晶の製造方法 | |
| JP2014058420A (ja) | １３族窒化物結晶、１３族窒化物結晶基板、及び１３族窒化物結晶の製造方法 | |
| JP2015189616A (ja) | サファイア単結晶の製造方法 | |
| JP5218934B2 (ja) | 金属シリコンとその製造方法 | |
| JPH11292694A (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JP6060755B2 (ja) | サファイア単結晶育成用坩堝およびその製造方法 | |
| JP2014031291A (ja) | 単結晶サファイアインゴット及び坩堝 | |
| JP5938092B2 (ja) | 高純度シリコンの製造方法、及びこの方法で得られた高純度シリコン、並びに高純度シリコン製造用シリコン原料 | |
| JP7163762B2 (ja) | 鉄ガリウム合金結晶の結晶粒界の評価方法 | |
| TWI606512B (zh) | 電漿蝕刻裝置用矽構件及電漿蝕刻裝置用矽構件之製造方法 | |
| JP2014189425A5 (enrdf_load_stackoverflow) | ||
| JP2010265150A (ja) | サファイア単結晶の製造方法及び種結晶の製造方法 | |
| JP2004322195A (ja) | 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板 | |
| CN119041008B (zh) | 碳化硅晶体生长用助熔剂、立方碳化硅晶体及其生长方法 | |
| JP2014162698A (ja) | サファイア単結晶の製造方法 | |
| JP2014181146A (ja) | サファイア単結晶の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150421 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151015 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160218 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160315 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160413 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160510 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160523 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5949622 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |