JP5945192B2 - 表面増強ラマン散乱ユニット - Google Patents
表面増強ラマン散乱ユニット Download PDFInfo
- Publication number
- JP5945192B2 JP5945192B2 JP2012178773A JP2012178773A JP5945192B2 JP 5945192 B2 JP5945192 B2 JP 5945192B2 JP 2012178773 A JP2012178773 A JP 2012178773A JP 2012178773 A JP2012178773 A JP 2012178773A JP 5945192 B2 JP5945192 B2 JP 5945192B2
- Authority
- JP
- Japan
- Prior art keywords
- raman scattering
- conductor layer
- enhanced raman
- substrate
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 title claims description 98
- 239000004020 conductor Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 42
- 239000010410 layer Substances 0.000 description 107
- 238000001069 Raman spectroscopy Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000000465 moulding Methods 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/651—Cuvettes therefore
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Priority Applications (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012178773A JP5945192B2 (ja) | 2012-08-10 | 2012-08-10 | 表面増強ラマン散乱ユニット |
| PCT/JP2013/071696 WO2014025027A1 (ja) | 2012-08-10 | 2013-08-09 | 表面増強ラマン散乱素子 |
| US14/420,510 US9863884B2 (en) | 2012-08-10 | 2013-08-09 | Surface-enhanced Raman scattering element, and method for producing same |
| EP13828081.3A EP2884265A4 (en) | 2012-08-10 | 2013-08-09 | SURFACE-REINFORCED RAM SPREADING ELEMENT |
| US14/420,556 US9857306B2 (en) | 2012-08-10 | 2013-08-09 | Surface-enhanced Raman scattering element |
| CN201810538346.5A CN109001174B (zh) | 2012-08-10 | 2013-08-09 | 表面增强拉曼散射元件 |
| CN201380042452.XA CN104520696B (zh) | 2012-08-10 | 2013-08-09 | 表面增强拉曼散射元件及其制造方法 |
| EP13827643.1A EP2884264B1 (en) | 2012-08-10 | 2013-08-09 | Surface-enhanced raman scattering element, and method for producing same |
| TW102128717A TWI604186B (zh) | 2012-08-10 | 2013-08-09 | Surface Enhanced Raman Scattering Element |
| EP13827159.8A EP2889605B1 (en) | 2012-08-10 | 2013-08-09 | Surface-enhanced raman scattering element |
| CN201380040187.1A CN104508464B (zh) | 2012-08-10 | 2013-08-09 | 表面增强拉曼散射元件 |
| PCT/JP2013/071707 WO2014025037A1 (ja) | 2012-08-10 | 2013-08-09 | 表面増強ラマン散乱素子及びその製造方法 |
| PCT/JP2013/071704 WO2014025035A1 (ja) | 2012-08-10 | 2013-08-09 | 表面増強ラマン散乱素子 |
| CN201380040860.1A CN104508466B (zh) | 2012-08-10 | 2013-08-09 | 表面增强拉曼散射元件 |
| US14/420,502 US9863883B2 (en) | 2012-08-10 | 2013-08-09 | Surface-enhanced raman scattering element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012178773A JP5945192B2 (ja) | 2012-08-10 | 2012-08-10 | 表面増強ラマン散乱ユニット |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014037974A JP2014037974A (ja) | 2014-02-27 |
| JP2014037974A5 JP2014037974A5 (enExample) | 2015-05-28 |
| JP5945192B2 true JP5945192B2 (ja) | 2016-07-05 |
Family
ID=50068243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012178773A Expired - Fee Related JP5945192B2 (ja) | 2012-08-10 | 2012-08-10 | 表面増強ラマン散乱ユニット |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9857306B2 (enExample) |
| EP (1) | EP2889605B1 (enExample) |
| JP (1) | JP5945192B2 (enExample) |
| CN (2) | CN109001174B (enExample) |
| WO (1) | WO2014025027A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5908370B2 (ja) * | 2012-08-10 | 2016-04-26 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| EP2884264B1 (en) | 2012-08-10 | 2019-11-20 | Hamamatsu Photonics K.K. | Surface-enhanced raman scattering element, and method for producing same |
| US10132755B2 (en) | 2012-08-10 | 2018-11-20 | Hamamatsu Photonics K.K. | Surface-enhanced Raman scattering element, and method for manufacturing surface-enhanced Raman scattering element |
| CN104508466B (zh) | 2012-08-10 | 2018-07-17 | 浜松光子学株式会社 | 表面增强拉曼散射元件 |
| JP6023509B2 (ja) * | 2012-08-10 | 2016-11-09 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| JP6294797B2 (ja) * | 2014-09-10 | 2018-03-14 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱ユニット |
| US10527494B2 (en) * | 2014-09-26 | 2020-01-07 | Korea Intitute of Machinery & Materials | Substrate on which multiple nanogaps are formed, and manufacturing method therefor |
| JP6564203B2 (ja) * | 2015-02-26 | 2019-08-21 | 浜松ホトニクス株式会社 | 表面増強ラマン散乱素子及びその製造方法 |
| KR101776103B1 (ko) * | 2016-04-01 | 2017-09-08 | 한국생산기술연구원 | 합성수지를 이용한 sers 기판 및 이의 제조방법 |
| EP3401670A1 (en) * | 2017-05-10 | 2018-11-14 | ETH Zurich | Method, uses of and device for surface enhanced raman spectroscopy |
| CN109001173B (zh) * | 2017-06-06 | 2021-01-26 | 清华大学 | 单分子检测的方法 |
| CN109470679B (zh) | 2017-09-08 | 2021-04-23 | 清华大学 | 用于分子检测的分子载体 |
| CN109470677B (zh) | 2017-09-08 | 2021-11-05 | 清华大学 | 分子检测装置 |
| CN109470680B (zh) * | 2017-09-08 | 2022-02-08 | 清华大学 | 用于分子检测的分子载体的制备方法 |
| CN109470681B (zh) * | 2017-09-08 | 2022-02-08 | 清华大学 | 一种分子检测方法 |
| CN109470682B (zh) | 2017-09-08 | 2024-12-10 | 清华大学 | 用于分子检测的分子载体 |
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| US20040023046A1 (en) | 1998-08-04 | 2004-02-05 | Falko Schlottig | Carrier substrate for Raman spectrometric analysis |
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| US7460224B2 (en) | 2005-12-19 | 2008-12-02 | Opto Trace Technologies, Inc. | Arrays of nano structures for surface-enhanced Raman scattering |
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| TWI469917B (zh) * | 2012-08-09 | 2015-01-21 | Nat Univ Tsing Hua | 具表面增強拉曼散射活性之結構、其製造方法及其偵測裝置 |
| CN108827928B (zh) | 2012-08-10 | 2021-12-24 | 浜松光子学株式会社 | 表面增强拉曼散射单元及其使用方法 |
| EP2884262B1 (en) | 2012-08-10 | 2022-04-27 | Hamamatsu Photonics K.K. | Surface-enhanced raman scattering unit |
| WO2015009737A1 (en) * | 2013-07-18 | 2015-01-22 | Optokey, Inc. | Surface enhanced raman spectroscopy resonator structures and methods of making same |
-
2012
- 2012-08-10 JP JP2012178773A patent/JP5945192B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-09 WO PCT/JP2013/071696 patent/WO2014025027A1/ja not_active Ceased
- 2013-08-09 EP EP13827159.8A patent/EP2889605B1/en not_active Not-in-force
- 2013-08-09 US US14/420,556 patent/US9857306B2/en active Active
- 2013-08-09 CN CN201810538346.5A patent/CN109001174B/zh not_active Expired - Fee Related
- 2013-08-09 CN CN201380040187.1A patent/CN104508464B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN109001174A (zh) | 2018-12-14 |
| EP2889605A1 (en) | 2015-07-01 |
| US20150233833A1 (en) | 2015-08-20 |
| CN104508464A (zh) | 2015-04-08 |
| CN104508464B (zh) | 2018-06-26 |
| US9857306B2 (en) | 2018-01-02 |
| EP2889605B1 (en) | 2022-02-09 |
| EP2889605A4 (en) | 2016-08-17 |
| JP2014037974A (ja) | 2014-02-27 |
| CN109001174B (zh) | 2022-01-07 |
| WO2014025027A1 (ja) | 2014-02-13 |
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