JP5939260B2 - 自動車に電圧供給するための発電機装置 - Google Patents
自動車に電圧供給するための発電機装置 Download PDFInfo
- Publication number
- JP5939260B2 JP5939260B2 JP2013542427A JP2013542427A JP5939260B2 JP 5939260 B2 JP5939260 B2 JP 5939260B2 JP 2013542427 A JP2013542427 A JP 2013542427A JP 2013542427 A JP2013542427 A JP 2013542427A JP 5939260 B2 JP5939260 B2 JP 5939260B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- rectifying element
- area
- diode
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015556 catabolic process Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims 6
- 238000010248 power generation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Control Of Eletrric Generators (AREA)
Description
自動車用三相交流発電機または交流発電機(オルタネータ)においては、整流のために交流ブリッジ(整流器)が使用される。整流素子として主にシリコンから成りpn接合を備えた半導体ダイオードが使用される。例えば三相交流発電機では6個の半導体ダイオードが1つのB6ブリッジへ相互接続される。時にはダイオードも並列に接続され、例えば6個のダイオードの代わりに12個のダイオードが使用される。異なる相数の交流発電機ではそれに応じて適合されたダイオードブリッジが使用される。ダイオードは電流密度が500A/cm2超までの大きい電流および最大障壁接合温度Tjが約225℃の高い温度で動作するよう設計されている。典型的には、順方向での電圧降下、すなわち順方向電圧UFは、使用する電流が大きい場合には、約1Vに達する。一般的に逆方向の動作では、降伏電圧UZまでは非常に小さな逆方向電流IRしか流れない。この電圧を超えると、逆方向電流が非常に強く増大する。それ故に、さらなる電圧の上昇が防止される。これに関して、ツェナーダイオード(Zダイオード)は、車両の車載電源の電圧に応じて逆方向電圧が約20V〜40Vのものが主に使用されている。Zダイオードは降伏時に非常に大きな電流を短時間に加えることさえ可能である。したがってZダイオードは、負荷変化時に発電機の過電圧を制限する(ロードダンプ)ために使用される。このようなダイオードは例えばDE19549202B4に記述されているように通常、堅牢なダイオード圧入筐体に包入されている。
本発明によれば、自動車発電機用整流器内に専用に作られたnチャネルMOSFETが使用され、このnチャネルMOSFETではゲート、ボディエリアおよびソースエリアが固定的に電気的に相互に結合され、ドレインエリアがカソードとして用いられる。この特別な、疑似ショットキーダイオード(PSD)とも呼ばれる整流素子により、HEDと同じように、pnダイオードの順方向電圧よりも低い順方向電圧を得ることができる。好ましくはこのような整流素子は、500A/cm2の電流が流れる場合、0.7Vより小さいオン状態電圧ないしは導通電圧を有する。好ましくはこのオン状態電圧は0.5V〜0.7Vの間にある。このような整流素子はショットキー接触を含んでおらず、したがって特別なシリサイドプロセスも不要である。これは、MOSFET用標準プロセスを軽度に変更して、プレーナー技術でもトレンチ技術でも製造することができる。これは多数キャリアコンポーネントとして、やはり非常に高速にスイッチングする。
Claims (7)
- 発電機によって供給される交流電圧を整流するために少なくとも1つの整流素子を備えた、車両の電圧供給用発電機装置において、
前記整流素子はnチャネルMOS電界効果トランジスタを備え、該nチャネルMOS電界効果トランジスタにおいてゲート、ボディエリアおよびソースエリアが電気的に互いに接続され、前記ソースエリアがアノードとして機能し、ドレインエリアがカソードとして機能し、
前記整流素子は、pnダイオードの順方向電圧よりも低いオン状態電圧(UON)を有しており、ここで、前記整流素子は、500A/cm2の電流が流れる場合に、オン状態電圧(UON)が0.7Vより小さくなり、
前記整流素子は、20nm未満のゲート酸化層の厚さを備えており、
前記整流素子は、電圧制限部を備えており、前記電圧制限部が、ボディダイオードのアバランシェ降伏に起因して過電圧を制限する、
ことを特徴とする、
発電機装置。 - 前記ボディエリアのドーピングの濃度が、表面におけるしきい値電圧低減のために引き下げられることを特徴とする、請求項1に記載の発電機装置。
- 前記ソースエリアと前記ゲートの接続はモノリシックに集積されていることを特徴とする、請求項1または2に記載の発電機装置。
- 前記整流素子は、前記整流素子のゲート、ボディエリアおよびソースエリアの上方に金属層(7)を有し、前記整流素子は、前記整流素子のゲート、ボディエリアおよびソースエリアの下方に基板(1)を有し、前記金属層(7)の上方には、ハンダ付け可能な表側の面(8)が形成され、前記基板(1)の下方には、ハンダ付け可能な裏側の面(9)が形成されていることを特徴とする、請求項1から3のうちのいずれか一項に記載の発電機装置。
- 前記nチャネルMOS電界効果トランジスタが、プレーナー技術によって製造されたnチャネルパワーMOS電界効果トランジスタ、または、トレンチ技術によって製造されたnチャネルパワーMOS電界効果トランジスタである、請求項1から4のうちのいずれか一項に記載の発電機装置。
- 前記発電機装置は複数の整流素子を備え、それぞれが、1つの二極性ダイオード圧入筐体に備えられていることを特徴とする、請求項1から5のうちのいずれか一項に記載の発電機装置。
- 前記整流素子に、電圧制限素子が並列に接続されていることを特徴とする、請求項1から6のうちのいずれか一項に記載の発電機装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010062677A DE102010062677A1 (de) | 2010-12-09 | 2010-12-09 | Generatorvorrichtung zur Spannungsversorgung eines Kraftfahrzeugs |
DE102010062677.5 | 2010-12-09 | ||
PCT/EP2011/068298 WO2012076231A2 (de) | 2010-12-09 | 2011-10-20 | Generatorvorrichtung zur spannungsversorgung eines kraftfahrzeugs |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014502425A JP2014502425A (ja) | 2014-01-30 |
JP5939260B2 true JP5939260B2 (ja) | 2016-06-22 |
Family
ID=44872314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013542427A Active JP5939260B2 (ja) | 2010-12-09 | 2011-10-20 | 自動車に電圧供給するための発電機装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9660550B2 (ja) |
EP (1) | EP2649649B1 (ja) |
JP (1) | JP5939260B2 (ja) |
CN (1) | CN103262251A (ja) |
DE (1) | DE102010062677A1 (ja) |
WO (1) | WO2012076231A2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324625B2 (en) | 2012-05-31 | 2016-04-26 | Infineon Technologies Ag | Gated diode, battery charging assembly and generator assembly |
DE102013204701A1 (de) | 2013-03-18 | 2014-10-02 | Robert Bosch Gmbh | Pseudo-Schottky-Diode |
CN104576361B (zh) * | 2013-10-23 | 2017-09-22 | 无锡华润上华半导体有限公司 | 功率二极管的制备方法 |
CN104576360B (zh) * | 2013-10-23 | 2017-08-08 | 无锡华润上华半导体有限公司 | 功率二极管的制备方法 |
DE102014208257A1 (de) * | 2014-04-30 | 2015-11-05 | Continental Automotive Gmbh | Stabilisierungsschaltung für ein Bordnetz |
CN107925369A (zh) | 2015-05-15 | 2018-04-17 | B·J·格鲁恩沃德 | 用于从振动分子电荷捕获电能的电路 |
JP6988518B2 (ja) * | 2018-01-26 | 2022-01-05 | 株式会社デンソー | 整流装置及び回転電機 |
JP6918244B2 (ja) * | 2018-08-03 | 2021-08-11 | 三菱電機株式会社 | 整流装置及びそれを備えた車両用交流発電装置 |
US11508808B2 (en) * | 2018-10-11 | 2022-11-22 | Actron Technology Corporation | Rectifier device, rectifier, generator device, and powertrain for vehicle |
CN111555645B (zh) * | 2020-04-09 | 2022-01-11 | 北京中航智科技有限公司 | 一种输出可控电压的稳压电路 |
CN114512402A (zh) * | 2022-04-19 | 2022-05-17 | 深圳芯能半导体技术有限公司 | 一种沟槽型碳化硅肖特基二极管及其制作方法 |
CN116435354A (zh) * | 2023-06-12 | 2023-07-14 | 广东巨风半导体有限公司 | 一种逆导型绝缘栅双极型晶体管、制造方法及器件 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3481287B2 (ja) * | 1994-02-24 | 2003-12-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE19549202B4 (de) | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Gleichrichterdiode |
US5818084A (en) * | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
US5744994A (en) | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
DE19733212A1 (de) * | 1997-08-01 | 1999-02-04 | Bosch Gmbh Robert | Verfahren zur Regelung eines von einer Brennkraftmaschine antreibbaren Generators |
US6349047B1 (en) | 2000-12-18 | 2002-02-19 | Lovoltech, Inc. | Full wave rectifier circuit using normally off JFETs |
DE10042526A1 (de) * | 2000-08-30 | 2001-08-02 | Audi Ag | Generator zur elektrischen Spannungsversorgung eines Kraftfahrzeuges |
FR2833776B1 (fr) * | 2001-10-09 | 2005-09-09 | Valeo Equip Electr Moteur | Alternateur a pont de redressement, notamment pour vehicule automobile |
US6979861B2 (en) * | 2002-05-30 | 2005-12-27 | Apd Semiconductor, Inc. | Power device having reduced reverse bias leakage current |
JP4221999B2 (ja) * | 2002-10-29 | 2009-02-12 | トヨタ自動車株式会社 | 発電電動装置 |
TW200527618A (en) * | 2003-11-10 | 2005-08-16 | Bosch Gmbh Robert | Diode |
JP4519713B2 (ja) * | 2004-06-17 | 2010-08-04 | 株式会社東芝 | 整流回路とこれを用いた無線通信装置 |
US7142015B2 (en) * | 2004-09-23 | 2006-11-28 | International Business Machines Corporation | Fast turn-off circuit for controlling leakage |
DE102004056663A1 (de) * | 2004-11-24 | 2006-06-01 | Robert Bosch Gmbh | Halbleitereinrichtung und Gleichrichteranordnung |
CA2614604A1 (en) | 2005-07-08 | 2007-06-28 | Med-El Elektromedizinische Geraete Gmbh | Cmos full wave rectifier |
DE102007060231A1 (de) * | 2007-12-14 | 2009-06-18 | Robert Bosch Gmbh | Generator mit Gleichrichteranordnung |
JP5262101B2 (ja) * | 2007-12-17 | 2013-08-14 | パナソニック株式会社 | 電力変換回路 |
US8445947B2 (en) * | 2008-07-04 | 2013-05-21 | Stmicroelectronics (Rousset) Sas | Electronic circuit having a diode-connected MOS transistor with an improved efficiency |
US8022474B2 (en) | 2008-09-30 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device |
US8531226B2 (en) * | 2011-03-22 | 2013-09-10 | Fairchild Semiconductor Corporation | Bridge circuit providing a polarity insensitive power connection |
US20130313948A1 (en) * | 2012-05-24 | 2013-11-28 | Oved Zucker | Electric Motor/Generator With Multiple Individually Controlled Turn-Less Structures |
-
2010
- 2010-12-09 DE DE102010062677A patent/DE102010062677A1/de not_active Withdrawn
-
2011
- 2011-10-20 WO PCT/EP2011/068298 patent/WO2012076231A2/de active Application Filing
- 2011-10-20 US US13/990,334 patent/US9660550B2/en active Active
- 2011-10-20 JP JP2013542427A patent/JP5939260B2/ja active Active
- 2011-10-20 EP EP11775937.3A patent/EP2649649B1/de active Active
- 2011-10-20 CN CN2011800592954A patent/CN103262251A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US9660550B2 (en) | 2017-05-23 |
EP2649649B1 (de) | 2019-06-05 |
US20130329476A1 (en) | 2013-12-12 |
JP2014502425A (ja) | 2014-01-30 |
CN103262251A (zh) | 2013-08-21 |
DE102010062677A1 (de) | 2012-06-14 |
WO2012076231A2 (de) | 2012-06-14 |
EP2649649A2 (de) | 2013-10-16 |
WO2012076231A3 (de) | 2012-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5939260B2 (ja) | 自動車に電圧供給するための発電機装置 | |
EP3007347B1 (en) | Rectifying devices and rectifier arrangements | |
TWI618256B (zh) | 僞肖特基二極體 | |
Chowdhury et al. | Lateral and vertical transistors using the AlGaN/GaN heterostructure | |
US9337827B2 (en) | Electronic circuit with a reverse-conducting IGBT and gate driver circuit | |
US8299737B2 (en) | Motor driving circuit | |
JP6117640B2 (ja) | 半導体装置及び駆動システム | |
JPWO2018155566A1 (ja) | 炭化珪素半導体装置および電力変換装置 | |
JP6652802B2 (ja) | 半導体装置、および当該半導体装置を備えるインバータ装置 | |
US20180167000A1 (en) | Rectifier device | |
JP5049392B2 (ja) | 整流器装置および整流器装置を備えたジェネレータ | |
CN110556371A (zh) | 整流器器件 | |
WO2016002057A1 (ja) | 半導体装置、パワーモジュール、電力変換装置、3相モータシステム、自動車、並びに鉄道車両 | |
US9142552B2 (en) | Semiconductor array having temperature-compensated breakdown voltage | |
US10666158B2 (en) | Rectifier device | |
CN110767651A (zh) | 功率半导体器件 | |
CN110767751B (zh) | 功率半导体器件 | |
US20230139229A1 (en) | Semiconductor device and power converter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140908 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150727 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160307 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160406 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20160425 |
|
R155 | Notification before disposition of declining of application |
Free format text: JAPANESE INTERMEDIATE CODE: R155 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160502 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20160425 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5939260 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |