JP5939184B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5939184B2
JP5939184B2 JP2013060691A JP2013060691A JP5939184B2 JP 5939184 B2 JP5939184 B2 JP 5939184B2 JP 2013060691 A JP2013060691 A JP 2013060691A JP 2013060691 A JP2013060691 A JP 2013060691A JP 5939184 B2 JP5939184 B2 JP 5939184B2
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substrate
film
thin film
insulating thin
electrode
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JP2013060691A
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Japanese (ja)
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JP2014187166A (ja
JP2014187166A5 (enExample
Inventor
宣年 藤井
藤井　　宣年
賢哉 萩本
賢哉 萩本
青柳　健一
健一 青柳
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51552209&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5939184(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013060691A priority Critical patent/JP5939184B2/ja
Priority to TW103104291A priority patent/TWI614880B/zh
Priority to KR1020140020012A priority patent/KR102158394B1/ko
Priority to US14/206,489 priority patent/US9190275B2/en
Priority to CN201810156644.8A priority patent/CN108198834A/zh
Priority to CN201410095150.5A priority patent/CN104064574B/zh
Priority to CN201910445485.8A priority patent/CN110190076B/zh
Priority to CN201910468930.2A priority patent/CN110211979B/zh
Publication of JP2014187166A publication Critical patent/JP2014187166A/ja
Publication of JP2014187166A5 publication Critical patent/JP2014187166A5/ja
Priority to US14/880,957 priority patent/US9666627B2/en
Publication of JP5939184B2 publication Critical patent/JP5939184B2/ja
Application granted granted Critical
Priority to US15/607,845 priority patent/US10134795B2/en
Priority to US15/987,278 priority patent/US10707258B2/en
Priority to US16/554,347 priority patent/US11107855B2/en
Priority to US17/392,733 priority patent/US20210366958A1/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H10P90/1914—
    • H10W20/0526—
    • H10W20/094—
    • H10W20/097—
    • H10W72/019—
    • H10W72/01951—
    • H10W72/07236—
    • H10W72/90—
    • H10W72/923—
    • H10W72/934—
    • H10W72/941—
    • H10W72/951—
    • H10W72/952—
    • H10W72/953—
    • H10W80/035—
    • H10W80/301—
    • H10W80/312—
    • H10W80/327—
    • H10W80/732—
    • H10W80/754—
    • H10W90/792—

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013060691A 2013-03-22 2013-03-22 半導体装置の製造方法 Active JP5939184B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2013060691A JP5939184B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法
TW103104291A TWI614880B (zh) 2013-03-22 2014-02-10 半導體裝置及製造方法
KR1020140020012A KR102158394B1 (ko) 2013-03-22 2014-02-21 반도체 장치 및 제조 방법
US14/206,489 US9190275B2 (en) 2013-03-22 2014-03-12 Bonding substrates with electrical connection through insulating film
CN201810156644.8A CN108198834A (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201410095150.5A CN104064574B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201910445485.8A CN110190076B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201910468930.2A CN110211979B (zh) 2013-03-22 2014-03-14 光检测装置及其制造方法
US14/880,957 US9666627B2 (en) 2013-03-22 2015-10-12 Electronic apparatus and manufacturing method for an electronic apparatus having multiple substrates directly electrically connected through an insulating film
US15/607,845 US10134795B2 (en) 2013-03-22 2017-05-30 Semiconductor device with multiple substrates electrically connected through an insulating film and manufacturing method
US15/987,278 US10707258B2 (en) 2013-03-22 2018-05-23 Semiconductor device with multiple substrates electrically connected through an insulating film
US16/554,347 US11107855B2 (en) 2013-03-22 2019-08-28 Method for bonding and connecting substrates
US17/392,733 US20210366958A1 (en) 2013-03-22 2021-08-03 Semiconductor device and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013060691A JP5939184B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014187166A JP2014187166A (ja) 2014-10-02
JP2014187166A5 JP2014187166A5 (enExample) 2015-03-19
JP5939184B2 true JP5939184B2 (ja) 2016-06-22

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US (6) US9190275B2 (enExample)
JP (1) JP5939184B2 (enExample)
KR (1) KR102158394B1 (enExample)
CN (4) CN110211979B (enExample)
TW (1) TWI614880B (enExample)

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Also Published As

Publication number Publication date
CN108198834A (zh) 2018-06-22
US10707258B2 (en) 2020-07-07
US20210366958A1 (en) 2021-11-25
US10134795B2 (en) 2018-11-20
US20170263666A1 (en) 2017-09-14
CN104064574A (zh) 2014-09-24
CN104064574B (zh) 2019-06-07
US9666627B2 (en) 2017-05-30
CN110190076B (zh) 2022-12-16
JP2014187166A (ja) 2014-10-02
TWI614880B (zh) 2018-02-11
US20180269248A1 (en) 2018-09-20
TW201438208A (zh) 2014-10-01
US11107855B2 (en) 2021-08-31
KR20140115948A (ko) 2014-10-01
US20160035777A1 (en) 2016-02-04
US9190275B2 (en) 2015-11-17
CN110211979A (zh) 2019-09-06
KR102158394B1 (ko) 2020-09-21
CN110190076A (zh) 2019-08-30
US20190386056A1 (en) 2019-12-19
US20140284744A1 (en) 2014-09-25
CN110211979B (zh) 2022-11-18

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