JP5939184B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5939184B2
JP5939184B2 JP2013060691A JP2013060691A JP5939184B2 JP 5939184 B2 JP5939184 B2 JP 5939184B2 JP 2013060691 A JP2013060691 A JP 2013060691A JP 2013060691 A JP2013060691 A JP 2013060691A JP 5939184 B2 JP5939184 B2 JP 5939184B2
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substrate
film
thin film
insulating thin
electrode
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JP2013060691A
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Japanese (ja)
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JP2014187166A (ja
JP2014187166A5 (enExample
Inventor
宣年 藤井
藤井  宣年
賢哉 萩本
賢哉 萩本
青柳 健一
健一 青柳
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013060691A priority Critical patent/JP5939184B2/ja
Priority to TW103104291A priority patent/TWI614880B/zh
Priority to KR1020140020012A priority patent/KR102158394B1/ko
Priority to US14/206,489 priority patent/US9190275B2/en
Priority to CN201810156644.8A priority patent/CN108198834A/zh
Priority to CN201410095150.5A priority patent/CN104064574B/zh
Priority to CN201910468930.2A priority patent/CN110211979B/zh
Priority to CN201910445485.8A priority patent/CN110190076B/zh
Publication of JP2014187166A publication Critical patent/JP2014187166A/ja
Publication of JP2014187166A5 publication Critical patent/JP2014187166A5/ja
Priority to US14/880,957 priority patent/US9666627B2/en
Publication of JP5939184B2 publication Critical patent/JP5939184B2/ja
Application granted granted Critical
Priority to US15/607,845 priority patent/US10134795B2/en
Priority to US15/987,278 priority patent/US10707258B2/en
Priority to US16/554,347 priority patent/US11107855B2/en
Priority to US17/392,733 priority patent/US20210366958A1/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
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    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
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    • H10W80/327Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013060691A 2013-03-22 2013-03-22 半導体装置の製造方法 Active JP5939184B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2013060691A JP5939184B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法
TW103104291A TWI614880B (zh) 2013-03-22 2014-02-10 半導體裝置及製造方法
KR1020140020012A KR102158394B1 (ko) 2013-03-22 2014-02-21 반도체 장치 및 제조 방법
US14/206,489 US9190275B2 (en) 2013-03-22 2014-03-12 Bonding substrates with electrical connection through insulating film
CN201810156644.8A CN108198834A (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201410095150.5A CN104064574B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201910468930.2A CN110211979B (zh) 2013-03-22 2014-03-14 光检测装置及其制造方法
CN201910445485.8A CN110190076B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
US14/880,957 US9666627B2 (en) 2013-03-22 2015-10-12 Electronic apparatus and manufacturing method for an electronic apparatus having multiple substrates directly electrically connected through an insulating film
US15/607,845 US10134795B2 (en) 2013-03-22 2017-05-30 Semiconductor device with multiple substrates electrically connected through an insulating film and manufacturing method
US15/987,278 US10707258B2 (en) 2013-03-22 2018-05-23 Semiconductor device with multiple substrates electrically connected through an insulating film
US16/554,347 US11107855B2 (en) 2013-03-22 2019-08-28 Method for bonding and connecting substrates
US17/392,733 US20210366958A1 (en) 2013-03-22 2021-08-03 Semiconductor device and manufacturing method

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Application Number Priority Date Filing Date Title
JP2013060691A JP5939184B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法

Publications (3)

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JP2014187166A JP2014187166A (ja) 2014-10-02
JP2014187166A5 JP2014187166A5 (enExample) 2015-03-19
JP5939184B2 true JP5939184B2 (ja) 2016-06-22

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US (6) US9190275B2 (enExample)
JP (1) JP5939184B2 (enExample)
KR (1) KR102158394B1 (enExample)
CN (4) CN110190076B (enExample)
TW (1) TWI614880B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5517800B2 (ja) * 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
JP5682327B2 (ja) * 2011-01-25 2015-03-11 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP5939184B2 (ja) * 2013-03-22 2016-06-22 ソニー株式会社 半導体装置の製造方法
TWI648986B (zh) * 2014-04-15 2019-01-21 Sony Corporation 攝像元件、電子機器
TWI676280B (zh) * 2014-04-18 2019-11-01 日商新力股份有限公司 固體攝像裝置及具備其之電子機器
JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP2016092413A (ja) * 2014-10-29 2016-05-23 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP6335099B2 (ja) * 2014-11-04 2018-05-30 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
JP2016174016A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置および半導体装置の製造方法
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
JP2017117828A (ja) 2015-12-21 2017-06-29 ソニー株式会社 固体撮像素子および電子装置
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