JP5939184B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5939184B2
JP5939184B2 JP2013060691A JP2013060691A JP5939184B2 JP 5939184 B2 JP5939184 B2 JP 5939184B2 JP 2013060691 A JP2013060691 A JP 2013060691A JP 2013060691 A JP2013060691 A JP 2013060691A JP 5939184 B2 JP5939184 B2 JP 5939184B2
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Japan
Prior art keywords
substrate
film
thin film
insulating thin
electrode
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JP2013060691A
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English (en)
Japanese (ja)
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JP2014187166A5 (enExample
JP2014187166A (ja
Inventor
宣年 藤井
藤井　　宣年
賢哉 萩本
賢哉 萩本
青柳　健一
健一 青柳
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51552209&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5939184(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013060691A priority Critical patent/JP5939184B2/ja
Priority to TW103104291A priority patent/TWI614880B/zh
Priority to KR1020140020012A priority patent/KR102158394B1/ko
Priority to US14/206,489 priority patent/US9190275B2/en
Priority to CN201910445485.8A priority patent/CN110190076B/zh
Priority to CN201910468930.2A priority patent/CN110211979B/zh
Priority to CN201410095150.5A priority patent/CN104064574B/zh
Priority to CN201810156644.8A priority patent/CN108198834A/zh
Publication of JP2014187166A publication Critical patent/JP2014187166A/ja
Publication of JP2014187166A5 publication Critical patent/JP2014187166A5/ja
Priority to US14/880,957 priority patent/US9666627B2/en
Publication of JP5939184B2 publication Critical patent/JP5939184B2/ja
Application granted granted Critical
Priority to US15/607,845 priority patent/US10134795B2/en
Priority to US15/987,278 priority patent/US10707258B2/en
Priority to US16/554,347 priority patent/US11107855B2/en
Priority to US17/392,733 priority patent/US20210366958A1/en
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    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
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TW103104291A TWI614880B (zh) 2013-03-22 2014-02-10 半導體裝置及製造方法
KR1020140020012A KR102158394B1 (ko) 2013-03-22 2014-02-21 반도체 장치 및 제조 방법
US14/206,489 US9190275B2 (en) 2013-03-22 2014-03-12 Bonding substrates with electrical connection through insulating film
CN201910445485.8A CN110190076B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201910468930.2A CN110211979B (zh) 2013-03-22 2014-03-14 光检测装置及其制造方法
CN201410095150.5A CN104064574B (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
CN201810156644.8A CN108198834A (zh) 2013-03-22 2014-03-14 半导体装置和制造方法
US14/880,957 US9666627B2 (en) 2013-03-22 2015-10-12 Electronic apparatus and manufacturing method for an electronic apparatus having multiple substrates directly electrically connected through an insulating film
US15/607,845 US10134795B2 (en) 2013-03-22 2017-05-30 Semiconductor device with multiple substrates electrically connected through an insulating film and manufacturing method
US15/987,278 US10707258B2 (en) 2013-03-22 2018-05-23 Semiconductor device with multiple substrates electrically connected through an insulating film
US16/554,347 US11107855B2 (en) 2013-03-22 2019-08-28 Method for bonding and connecting substrates
US17/392,733 US20210366958A1 (en) 2013-03-22 2021-08-03 Semiconductor device and manufacturing method

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5517800B2 (ja) * 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
JP5682327B2 (ja) * 2011-01-25 2015-03-11 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
JP5939184B2 (ja) * 2013-03-22 2016-06-22 ソニー株式会社 半導体装置の製造方法
TWI648986B (zh) * 2014-04-15 2019-01-21 日商新力股份有限公司 攝像元件、電子機器
TWI676280B (zh) * 2014-04-18 2019-11-01 日商新力股份有限公司 固體攝像裝置及具備其之電子機器
JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP2016092413A (ja) * 2014-10-29 2016-05-23 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP6335099B2 (ja) 2014-11-04 2018-05-30 東芝メモリ株式会社 半導体装置および半導体装置の製造方法
JP2016174016A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置および半導体装置の製造方法
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
JP2017117828A (ja) * 2015-12-21 2017-06-29 ソニー株式会社 固体撮像素子および電子装置
CN117133784A (zh) * 2017-07-25 2023-11-28 索尼半导体解决方案公司 固态摄像装置
TWI788430B (zh) * 2017-10-30 2023-01-01 日商索尼半導體解決方案公司 背面照射型之固體攝像裝置、背面照射型之固體攝像裝置之製造方法、攝像裝置及電子機器
JP7558065B2 (ja) * 2018-10-15 2024-09-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
CN110233980B (zh) * 2019-06-27 2021-11-02 Oppo广东移动通信有限公司 一种有源像素图像传感器及图像处理方法、存储介质
KR102780353B1 (ko) * 2019-08-26 2025-03-12 삼성전자주식회사 반도체 장치 및 그 제조방법
US11094653B2 (en) * 2019-11-13 2021-08-17 Sandisk Technologies Llc Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
JP7398475B2 (ja) * 2020-01-07 2023-12-14 長江存儲科技有限責任公司 金属誘電体接合方法及び構造
WO2021199679A1 (ja) * 2020-03-31 2021-10-07 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
US12199018B2 (en) * 2020-09-18 2025-01-14 Intel Corporation Direct bonding in microelectronic assemblies
US11990448B2 (en) 2020-09-18 2024-05-21 Intel Corporation Direct bonding in microelectronic assemblies
TW202238844A (zh) * 2021-02-22 2022-10-01 日商東京威力科創股份有限公司 半導體元件、接合方法及接合系統
US12094849B2 (en) * 2021-07-22 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition bonding layer for joining two semiconductor devices
KR20230052360A (ko) * 2021-10-12 2023-04-20 삼성전자주식회사 반도체 패키지 및 그 제조 방법
JP2023137581A (ja) * 2022-03-18 2023-09-29 キオクシア株式会社 半導体装置、半導体装置の製造方法
US20230411325A1 (en) * 2022-06-15 2023-12-21 Xilinx, Inc. Chip package integration with hybrid bonding
KR20240002437A (ko) 2022-06-29 2024-01-05 삼성전자주식회사 이미지 센서
WO2024024450A1 (ja) * 2022-07-26 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3663786B2 (ja) * 1996-10-14 2005-06-22 ヤマハ株式会社 半導体チップの実装方法と実装構造
JP3532788B2 (ja) 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
WO2004059720A1 (en) 2002-12-20 2004-07-15 International Business Machines Corporation Three-dimensional device fabrication method
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
US20070023158A1 (en) * 2005-08-01 2007-02-01 Honda Motor Co., Ltd. Method of and apparatus for manufacturing joined body
JP2007049040A (ja) * 2005-08-11 2007-02-22 Omron Corp 接合方法
CN101842871B (zh) * 2007-12-18 2013-01-09 夏普株式会社 半导体装置的制造方法以及半导体装置
JP2010066723A (ja) * 2008-09-12 2010-03-25 Kobe Steel Ltd 表示装置の製造方法
JP2010129576A (ja) 2008-11-25 2010-06-10 Nikon Corp 積層半導体基板、及び、積層半導体基板の製造方法
KR20100129576A (ko) 2009-06-01 2010-12-09 주식회사 유니온 메디칼 마이크로 니들을 구비한 스탬프
KR101411800B1 (ko) * 2009-12-26 2014-06-24 캐논 가부시끼가이샤 고체 촬상 장치 및 촬상 시스템
JP5843475B2 (ja) * 2010-06-30 2016-01-13 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
US8377798B2 (en) * 2010-11-10 2013-02-19 Taiwan Semiconductor Manufacturing Co., Ltd Method and structure for wafer to wafer bonding in semiconductor packaging
TWI458072B (zh) * 2010-12-16 2014-10-21 索泰克公司 將半導體構造直接黏附在一起之方法以及應用此等方法所形成之黏附半導體構造
US8778773B2 (en) * 2010-12-16 2014-07-15 Soitec Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
US8716105B2 (en) * 2011-03-31 2014-05-06 Soitec Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
CN102751266B (zh) * 2011-04-21 2016-02-03 精材科技股份有限公司 芯片封装体及其形成方法
JP5919653B2 (ja) 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
US8896125B2 (en) * 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US8697493B2 (en) * 2011-07-18 2014-04-15 Soitec Bonding surfaces for direct bonding of semiconductor structures
US8916448B2 (en) * 2013-01-09 2014-12-23 International Business Machines Corporation Metal to metal bonding for stacked (3D) integrated circuits
JP5939184B2 (ja) * 2013-03-22 2016-06-22 ソニー株式会社 半導体装置の製造方法

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US20140284744A1 (en) 2014-09-25
US9190275B2 (en) 2015-11-17
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