TWI614880B - 半導體裝置及製造方法 - Google Patents

半導體裝置及製造方法 Download PDF

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Publication number
TWI614880B
TWI614880B TW103104291A TW103104291A TWI614880B TW I614880 B TWI614880 B TW I614880B TW 103104291 A TW103104291 A TW 103104291A TW 103104291 A TW103104291 A TW 103104291A TW I614880 B TWI614880 B TW I614880B
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Taiwan
Prior art keywords
substrate
insulating film
attachment surface
film
electrodes
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TW103104291A
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English (en)
Chinese (zh)
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TW201438208A (zh
Inventor
藤井宣年
Nobutoshi Fujii
萩本賢哉
Yoshiya Hagimoto
青柳健一
Kenichi Aoyagi
香川惠永
Yoshihisa Kagawa
Original Assignee
新力股份有限公司
Sony Corporation
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Application filed by 新力股份有限公司, Sony Corporation filed Critical 新力股份有限公司
Publication of TW201438208A publication Critical patent/TW201438208A/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H10P90/1914—
    • H10W20/0526—
    • H10W20/094—
    • H10W20/097—
    • H10W72/019—
    • H10W72/01951—
    • H10W72/07236—
    • H10W72/90—
    • H10W72/923—
    • H10W72/934—
    • H10W72/941—
    • H10W72/951—
    • H10W72/952—
    • H10W72/953—
    • H10W80/035—
    • H10W80/301—
    • H10W80/312—
    • H10W80/327—
    • H10W80/732—
    • H10W80/754—
    • H10W90/792—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW103104291A 2013-03-22 2014-02-10 半導體裝置及製造方法 TWI614880B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013060691A JP5939184B2 (ja) 2013-03-22 2013-03-22 半導体装置の製造方法
JP2013-060691 2013-03-22

Publications (2)

Publication Number Publication Date
TW201438208A TW201438208A (zh) 2014-10-01
TWI614880B true TWI614880B (zh) 2018-02-11

Family

ID=51552209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103104291A TWI614880B (zh) 2013-03-22 2014-02-10 半導體裝置及製造方法

Country Status (5)

Country Link
US (6) US9190275B2 (enExample)
JP (1) JP5939184B2 (enExample)
KR (1) KR102158394B1 (enExample)
CN (4) CN110211979B (enExample)
TW (1) TWI614880B (enExample)

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JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
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JP2016174016A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置および半導体装置の製造方法
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
JP2017117828A (ja) * 2015-12-21 2017-06-29 ソニー株式会社 固体撮像素子および電子装置
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TW202238844A (zh) * 2021-02-22 2022-10-01 日商東京威力科創股份有限公司 半導體元件、接合方法及接合系統
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Also Published As

Publication number Publication date
CN108198834A (zh) 2018-06-22
US10707258B2 (en) 2020-07-07
US20210366958A1 (en) 2021-11-25
US10134795B2 (en) 2018-11-20
US20170263666A1 (en) 2017-09-14
CN104064574A (zh) 2014-09-24
CN104064574B (zh) 2019-06-07
US9666627B2 (en) 2017-05-30
CN110190076B (zh) 2022-12-16
JP2014187166A (ja) 2014-10-02
JP5939184B2 (ja) 2016-06-22
US20180269248A1 (en) 2018-09-20
TW201438208A (zh) 2014-10-01
US11107855B2 (en) 2021-08-31
KR20140115948A (ko) 2014-10-01
US20160035777A1 (en) 2016-02-04
US9190275B2 (en) 2015-11-17
CN110211979A (zh) 2019-09-06
KR102158394B1 (ko) 2020-09-21
CN110190076A (zh) 2019-08-30
US20190386056A1 (en) 2019-12-19
US20140284744A1 (en) 2014-09-25
CN110211979B (zh) 2022-11-18

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