JP5931741B2 - シリコン含有膜の平滑ＳｉＣｏｎｉエッチング - Google Patents

シリコン含有膜の平滑ＳｉＣｏｎｉエッチング Download PDF

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Publication number
JP5931741B2
JP5931741B2 JP2012545975A JP2012545975A JP5931741B2 JP 5931741 B2 JP5931741 B2 JP 5931741B2 JP 2012545975 A JP2012545975 A JP 2012545975A JP 2012545975 A JP2012545975 A JP 2012545975A JP 5931741 B2 JP5931741 B2 JP 5931741B2
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substrate
plasma
etching
silicon oxide
oxide layer
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JP2013516069A5 (enExample
JP2013516069A (ja
Inventor
ジン タン，
ジン タン，
ニティン イングル，
ニティン イングル，
ドンチン ヤン，
ドンチン ヤン，
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2012545975A 2009-12-23 2010-11-22 シリコン含有膜の平滑ＳｉＣｏｎｉエッチング Active JP5931741B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/646,030 2009-12-23
US12/646,030 US8501629B2 (en) 2009-12-23 2009-12-23 Smooth SiConi etch for silicon-containing films
PCT/US2010/057676 WO2011087580A1 (en) 2009-12-23 2010-11-22 Smooth siconi etch for silicon-containing films

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014216327A Division JP6009520B2 (ja) 2009-12-23 2014-10-23 シリコン含有膜の平滑ＳｉＣｏｎｉエッチング

Publications (3)

Publication Number Publication Date
JP2013516069A JP2013516069A (ja) 2013-05-09
JP2013516069A5 JP2013516069A5 (enExample) 2014-01-16
JP5931741B2 true JP5931741B2 (ja) 2016-06-08

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Family Applications (2)

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JP2012545975A Active JP5931741B2 (ja) 2009-12-23 2010-11-22 シリコン含有膜の平滑ＳｉＣｏｎｉエッチング
JP2014216327A Active JP6009520B2 (ja) 2009-12-23 2014-10-23 シリコン含有膜の平滑ＳｉＣｏｎｉエッチング

Family Applications After (1)

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Country Status (7)

Country Link
US (1) US8501629B2 (enExample)
JP (2) JP5931741B2 (enExample)
KR (1) KR101425629B1 (enExample)
CN (1) CN102687249B (enExample)
SG (1) SG181669A1 (enExample)
TW (1) TWI445081B (enExample)
WO (1) WO2011087580A1 (enExample)

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