JP5931063B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP5931063B2
JP5931063B2 JP2013522022A JP2013522022A JP5931063B2 JP 5931063 B2 JP5931063 B2 JP 5931063B2 JP 2013522022 A JP2013522022 A JP 2013522022A JP 2013522022 A JP2013522022 A JP 2013522022A JP 5931063 B2 JP5931063 B2 JP 5931063B2
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gas
plasma
generation unit
mounting table
plasma generation
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JP2013522022A
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Japanese (ja)
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JP2014501027A5 (https=
JP2014501027A (ja
Inventor
野沢　俊久
俊久 野沢
サイチュウ デン
サイチュウ デン
佐々木　勝
勝 佐々木
直輝 三原
直輝 三原
松本　直樹
直樹 松本
和基 茂山
和基 茂山
吉川　潤
潤 吉川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2013522022A 2010-11-17 2011-11-16 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP5931063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45815310P 2010-11-17 2010-11-17
US61/458,153 2010-11-17
PCT/JP2011/006391 WO2012066779A1 (en) 2010-11-17 2011-11-16 Apparatus for plasma treatment and method for plasma treatment

Publications (3)

Publication Number Publication Date
JP2014501027A JP2014501027A (ja) 2014-01-16
JP2014501027A5 JP2014501027A5 (https=) 2015-01-08
JP5931063B2 true JP5931063B2 (ja) 2016-06-08

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ID=46083727

Family Applications (1)

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JP2013522022A Expired - Fee Related JP5931063B2 (ja) 2010-11-17 2011-11-16 プラズマ処理装置及びプラズマ処理方法

Country Status (6)

Country Link
US (1) US9277637B2 (https=)
JP (1) JP5931063B2 (https=)
KR (1) KR101910678B1 (https=)
CN (1) CN103229280A (https=)
TW (1) TW201234452A (https=)
WO (1) WO2012066779A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
JP5934030B2 (ja) * 2012-06-13 2016-06-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
JP5700032B2 (ja) * 2012-12-26 2015-04-15 東京エレクトロン株式会社 プラズマドーピング装置、およびプラズマドーピング方法
JP2014160557A (ja) * 2013-02-19 2014-09-04 Tokyo Electron Ltd プラズマ処理装置
JP6068727B2 (ja) * 2013-04-04 2017-01-25 東京エレクトロン株式会社 パルス状気体プラズマドーピング方法及び装置
JP2015130325A (ja) * 2013-12-03 2015-07-16 東京エレクトロン株式会社 誘電体窓、アンテナ、及びプラズマ処理装置
JP6405958B2 (ja) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 エッチング方法、記憶媒体及びエッチング装置
US9530621B2 (en) 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US10354841B2 (en) * 2015-04-07 2019-07-16 Tokyo Electron Limited Plasma generation and control using a DC ring
TWI739335B (zh) * 2015-05-12 2021-09-11 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
US20170133202A1 (en) * 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
JP6785171B2 (ja) * 2017-03-08 2020-11-18 株式会社日本製鋼所 成膜方法および電子装置の製造方法並びにプラズマ原子層成長装置
JP6925202B2 (ja) * 2017-08-30 2021-08-25 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN111146063B (zh) * 2018-11-02 2022-04-08 江苏鲁汶仪器有限公司 一种等离子体反应腔进气系统
JP7080359B2 (ja) * 2019-02-14 2022-06-03 株式会社日立国際電気 高周波電源装置
KR102872895B1 (ko) * 2020-10-30 2025-10-17 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
WO2025197982A1 (ja) * 2024-03-19 2025-09-25 国立研究開発法人産業技術総合研究所 マイクロ波プラズマ処理装置、プラズマ発生方法

Family Cites Families (14)

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US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JP3053105B2 (ja) * 1989-06-30 2000-06-19 株式会社日立製作所 プラズマｃｖｄ装置及びその方法
JPH04346226A (ja) * 1991-05-23 1992-12-02 Hitachi Ltd 表面処理装置
EP0578047B1 (en) * 1992-06-23 1998-05-13 Nippon Telegraph And Telephone Corporation Plasma processing apparatus
JPH09115880A (ja) * 1995-10-16 1997-05-02 Hitachi Ltd ドライエッチング装置
US6217704B1 (en) * 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
JP2003142460A (ja) 2001-11-05 2003-05-16 Shibaura Mechatronics Corp プラズマ処理装置
JP5011631B2 (ja) * 2004-06-01 2012-08-29 富士ゼロックス株式会社 半導体製造装置および半導体製造システム
US20060024451A1 (en) * 2004-07-30 2006-02-02 Applied Materials Inc. Enhanced magnetic shielding for plasma-based semiconductor processing tool
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
US9263298B2 (en) * 2008-02-27 2016-02-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
JP2009302324A (ja) * 2008-06-13 2009-12-24 Tokyo Electron Ltd ガスリング、半導体基板処理装置および半導体基板処理方法
KR101266890B1 (ko) 2008-11-18 2013-05-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
KR20130129937A (ko) 2013-11-29
TW201234452A (en) 2012-08-16
JP2014501027A (ja) 2014-01-16
US9277637B2 (en) 2016-03-01
WO2012066779A1 (en) 2012-05-24
US20130302992A1 (en) 2013-11-14
KR101910678B1 (ko) 2018-10-22
CN103229280A (zh) 2013-07-31

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