JP5930629B2 - シリコン半導体ウェハ - Google Patents
シリコン半導体ウェハ Download PDFInfo
- Publication number
- JP5930629B2 JP5930629B2 JP2011180450A JP2011180450A JP5930629B2 JP 5930629 B2 JP5930629 B2 JP 5930629B2 JP 2011180450 A JP2011180450 A JP 2011180450A JP 2011180450 A JP2011180450 A JP 2011180450A JP 5930629 B2 JP5930629 B2 JP 5930629B2
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- Prior art keywords
- semiconductor wafer
- single crystal
- ratio
- rmax
- defects
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 34
- 229910052710 silicon Inorganic materials 0.000 title claims description 34
- 239000010703 silicon Substances 0.000 title claims description 34
- 239000013078 crystal Substances 0.000 claims description 73
- 230000007547 defect Effects 0.000 claims description 62
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 51
- 238000000034 method Methods 0.000 description 22
- 239000000155 melt Substances 0.000 description 19
- 230000000930 thermomechanical effect Effects 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012821 model calculation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
可能な限り多くの無欠陥半導体ウェハを得ることを目的として、シリコン単結晶を0.65mm/minの速度で引き上げることを試験した。この目的を達成するために、比V/Gの半径方向プロフィールを、DE 103 39 792 A1に記載されたできる限り均一にかつ臨界比にある半径方向プロフィールを得る手法に従って制御した。臨界比との最大の相違は、実際に9%よりも大きくなかった。しかしながら、この手法を用いて、無欠陥の半導体ウェハを得ることはできなかった。
本発明による半導体ウェハを製造するために、比較例の場合と同じ装置を使用した。
Claims (4)
- OSF欠陥も、Aスワール欠陥も、30nmより大きなサイズを有するCOP欠陥も有しない、酸素又はドーパントの成長縞の半径方向プロフィールを有するシリコン半導体ウェハにおいて、水平線と成長縞に接する接線との間の傾き角θは、傾き角θがr/rmax=0.1〜r/rmax=0.9の範囲内で測定される場合(その際、rは接線が成長縞に接する半径方向位置であり、rmaxは半導体ウェハの半径を表す)に、例外なく不等式−50°x(r/rmax)<θ<−23°x(r/rmax)により記載される角度で表される数値範囲にあり、
前記ウェハは少なくとも300mmの直径を有し、単結晶から切り出されたものである、シリコン半導体ウェハ。 - 炭素、窒素及び水素の元素からなる元素のグループからの少なくとも1種の元素の添加を有する、請求項1に記載の半導体ウェハ。
- 2.0×1013〜1.0×1015原子/cm3の窒素濃度を有する、請求項1または2
に記載の半導体ウェハ。 - 5×1017原子/cm3〜6.5×1017原子/cm3の酸素濃度を有する、請求項1から3までのいずれか1項記載の半導体ウェハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007005346.2A DE102007005346B4 (de) | 2007-02-02 | 2007-02-02 | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
DE102007005346.2 | 2007-02-02 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008022904A Division JP4819833B2 (ja) | 2007-02-02 | 2008-02-01 | シリコン半導体ウェハの製造方法及びシリコン半導体ウェハ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011231012A JP2011231012A (ja) | 2011-11-17 |
JP5930629B2 true JP5930629B2 (ja) | 2016-06-08 |
Family
ID=39597396
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008022904A Active JP4819833B2 (ja) | 2007-02-02 | 2008-02-01 | シリコン半導体ウェハの製造方法及びシリコン半導体ウェハ |
JP2011180450A Active JP5930629B2 (ja) | 2007-02-02 | 2011-08-22 | シリコン半導体ウェハ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008022904A Active JP4819833B2 (ja) | 2007-02-02 | 2008-02-01 | シリコン半導体ウェハの製造方法及びシリコン半導体ウェハ |
Country Status (7)
Country | Link |
---|---|
US (2) | US8043427B2 (ja) |
JP (2) | JP4819833B2 (ja) |
KR (1) | KR100953361B1 (ja) |
CN (2) | CN101302646B (ja) |
DE (1) | DE102007005346B4 (ja) |
SG (1) | SG144857A1 (ja) |
TW (1) | TWI363108B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4710247B2 (ja) * | 2004-05-19 | 2011-06-29 | 株式会社Sumco | 単結晶製造装置及び方法 |
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102006060359B4 (de) * | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
DE102009056638B4 (de) * | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
DE102009057593A1 (de) * | 2009-12-09 | 2011-06-16 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010007460B4 (de) | 2010-02-10 | 2013-11-28 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silicium aus einer in einem Tiegel enthaltenen Schmelze und dadurch hergestellter Einkristall |
JP2012142455A (ja) * | 2010-12-29 | 2012-07-26 | Siltronic Ag | アニールウエハの製造方法 |
JP2013129564A (ja) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | シリコン単結晶基板およびその製造方法 |
RU2530203C2 (ru) * | 2012-09-13 | 2014-10-10 | Владимир Александрович Филоненко | Способ создания межсоединений в полупроводниковых лазерах |
CN104047052B (zh) * | 2013-03-11 | 2018-10-19 | 三菱综合材料株式会社 | 半导体装置用硅部件及半导体装置用硅部件的制造方法 |
US8907494B2 (en) | 2013-03-14 | 2014-12-09 | International Business Machines Corporation | Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures |
TW201440124A (zh) * | 2013-04-12 | 2014-10-16 | Wafer Works Corp | 低應力之磊晶用的矽晶圓 |
JP6044530B2 (ja) * | 2013-12-05 | 2016-12-14 | 株式会社Sumco | シリコン単結晶の育成方法 |
JP6263999B2 (ja) * | 2013-12-05 | 2018-01-24 | 株式会社Sumco | シリコン単結晶の育成方法 |
DE102016209008B4 (de) * | 2016-05-24 | 2019-10-02 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium |
JP6604338B2 (ja) * | 2017-01-05 | 2019-11-13 | 株式会社Sumco | シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法 |
DE102019208670A1 (de) * | 2019-06-14 | 2020-12-17 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
DE102019211609A1 (de) | 2019-08-01 | 2021-02-04 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze |
JP7218708B2 (ja) * | 2019-10-29 | 2023-02-07 | 株式会社Sumco | 点欠陥シミュレーター、点欠陥シミュレーションプログラム、点欠陥シミュレーション方法、シリコン単結晶の製造方法および単結晶引き上げ装置 |
EP4321656A1 (de) | 2022-08-09 | 2024-02-14 | Siltronic AG | Verfahren zum herstellen eines monokristallinen kristalls aus silizium |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JP4158237B2 (ja) | 1998-08-24 | 2008-10-01 | 株式会社Sumco | 高品質シリコン単結晶の育成方法 |
JP4218080B2 (ja) * | 1998-07-30 | 2009-02-04 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びその製造方法 |
EP1125009B1 (en) * | 1998-10-14 | 2002-12-18 | MEMC Electronic Materials, Inc. | Method for accurately pulling a crystal |
TW505710B (en) * | 1998-11-20 | 2002-10-11 | Komatsu Denshi Kinzoku Kk | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
JP4079548B2 (ja) * | 1999-04-30 | 2008-04-23 | 株式会社荏原製作所 | 結晶の連続引き上げ装置 |
JP4357068B2 (ja) | 1999-05-11 | 2009-11-04 | Sumco Techxiv株式会社 | 単結晶インゴット製造装置及び方法 |
US6458202B1 (en) * | 1999-09-02 | 2002-10-01 | Memc Electronic Materials, Inc. | Process for preparing single crystal silicon having uniform thermal history |
JP4808832B2 (ja) * | 2000-03-23 | 2011-11-02 | Sumco Techxiv株式会社 | 無欠陥結晶の製造方法 |
JP2003002785A (ja) * | 2001-06-15 | 2003-01-08 | Shin Etsu Handotai Co Ltd | 表層部にボイド無欠陥層を有する直径300mm以上のシリコン単結晶ウエーハおよびその製造方法 |
CN1327041C (zh) * | 2002-11-12 | 2007-07-18 | Memc电子材料有限公司 | 用于生长单晶锭的拉晶机和方法 |
DE10259588B4 (de) * | 2002-12-19 | 2008-06-19 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
DE10339792B4 (de) | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
JP2005206391A (ja) * | 2004-01-20 | 2005-08-04 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板 |
US7371283B2 (en) * | 2004-11-23 | 2008-05-13 | Siltron Inc. | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby |
US7442251B2 (en) | 2005-06-20 | 2008-10-28 | Sumco Corporation | Method for producing silicon single crystals and silicon single crystal produced thereby |
US7819972B2 (en) * | 2005-06-20 | 2010-10-26 | Sumco Corporation | Method for growing silicon single crystal and method for manufacturing silicon wafer |
JP4806974B2 (ja) * | 2005-06-20 | 2011-11-02 | 株式会社Sumco | シリコン単結晶育成方法 |
DE102007027111B4 (de) * | 2006-10-04 | 2011-12-08 | Siltronic Ag | Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung |
-
2007
- 2007-02-02 DE DE102007005346.2A patent/DE102007005346B4/de active Active
-
2008
- 2008-01-18 CN CN2008100035429A patent/CN101302646B/zh active Active
- 2008-01-18 CN CN201110063018.2A patent/CN102174710B/zh active Active
- 2008-01-22 SG SG200800582-9A patent/SG144857A1/en unknown
- 2008-01-29 US US12/011,713 patent/US8043427B2/en active Active
- 2008-01-30 KR KR1020080009557A patent/KR100953361B1/ko active IP Right Grant
- 2008-01-31 TW TW097103699A patent/TWI363108B/zh active
- 2008-02-01 JP JP2008022904A patent/JP4819833B2/ja active Active
-
2011
- 2011-08-22 JP JP2011180450A patent/JP5930629B2/ja active Active
- 2011-09-06 US US13/225,822 patent/US8231725B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102174710B (zh) | 2015-02-11 |
DE102007005346A1 (de) | 2008-08-14 |
US20080187736A1 (en) | 2008-08-07 |
JP2011231012A (ja) | 2011-11-17 |
TW200833881A (en) | 2008-08-16 |
DE102007005346B4 (de) | 2015-09-17 |
JP4819833B2 (ja) | 2011-11-24 |
CN101302646A (zh) | 2008-11-12 |
CN102174710A (zh) | 2011-09-07 |
SG144857A1 (en) | 2008-08-28 |
KR20080072548A (ko) | 2008-08-06 |
JP2008189544A (ja) | 2008-08-21 |
US20110316128A1 (en) | 2011-12-29 |
KR100953361B1 (ko) | 2010-04-20 |
US8043427B2 (en) | 2011-10-25 |
CN101302646B (zh) | 2011-10-05 |
US8231725B2 (en) | 2012-07-31 |
TWI363108B (en) | 2012-05-01 |
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