JP5923337B2 - 積層体、および積層体を作製する方法 - Google Patents
積層体、および積層体を作製する方法 Download PDFInfo
- Publication number
- JP5923337B2 JP5923337B2 JP2012039799A JP2012039799A JP5923337B2 JP 5923337 B2 JP5923337 B2 JP 5923337B2 JP 2012039799 A JP2012039799 A JP 2012039799A JP 2012039799 A JP2012039799 A JP 2012039799A JP 5923337 B2 JP5923337 B2 JP 5923337B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- zero
- magnetic recording
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000005291 magnetic effect Effects 0.000 claims description 501
- 238000004544 sputter deposition Methods 0.000 claims description 85
- 238000000034 method Methods 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910000531 Co alloy Inorganic materials 0.000 claims description 6
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000010952 cobalt-chrome Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 552
- 230000001427 coherent effect Effects 0.000 description 26
- 230000001965 increasing effect Effects 0.000 description 20
- 239000006249 magnetic particle Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 13
- 238000000926 separation method Methods 0.000 description 10
- 230000006911 nucleation Effects 0.000 description 9
- 238000010899 nucleation Methods 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910018871 CoO 2 Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000011253 protective coating Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910019222 CoCrPt Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 229910000929 Ru alloy Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000006148 magnetic separator Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/037,288 | 2011-02-28 | ||
| US13/037,288 US9093101B2 (en) | 2011-02-28 | 2011-02-28 | Stack including a magnetic zero layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012181908A JP2012181908A (ja) | 2012-09-20 |
| JP2012181908A5 JP2012181908A5 (enExample) | 2015-03-05 |
| JP5923337B2 true JP5923337B2 (ja) | 2016-05-24 |
Family
ID=46719182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012039799A Expired - Fee Related JP5923337B2 (ja) | 2011-02-28 | 2012-02-27 | 積層体、および積層体を作製する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9093101B2 (enExample) |
| JP (1) | JP5923337B2 (enExample) |
| CN (1) | CN102682789A (enExample) |
| DE (1) | DE102012003821A1 (enExample) |
| MY (1) | MY180827A (enExample) |
| SG (2) | SG10201500452SA (enExample) |
| TW (1) | TWI564886B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9093101B2 (en) | 2011-02-28 | 2015-07-28 | Seagate Technology Llc | Stack including a magnetic zero layer |
| US9028985B2 (en) * | 2011-03-31 | 2015-05-12 | WD Media, LLC | Recording media with multiple exchange coupled magnetic layers |
| JP6156518B2 (ja) * | 2014-01-23 | 2017-07-05 | 富士電機株式会社 | 垂直磁気記録媒体 |
| JP6288658B2 (ja) * | 2014-03-20 | 2018-03-07 | 国立研究開発法人物質・材料研究機構 | 垂直磁化膜用下地、垂直磁化膜構造、垂直ｍｔｊ素子及びこれらを用いた垂直磁気記録媒体 |
| US9245564B2 (en) | 2014-04-29 | 2016-01-26 | HGST Netherlands B.V. | Soft underlayer having a multilayer structure for high areal density perpendicular recording media |
| US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
| US9990940B1 (en) | 2014-12-30 | 2018-06-05 | WD Media, LLC | Seed structure for perpendicular magnetic recording media |
| US20180197571A1 (en) * | 2017-01-10 | 2018-07-12 | Seagate Technology Llc | Translating layer for combining fcc and hcp lattice structures |
| US11380358B2 (en) * | 2020-06-25 | 2022-07-05 | Western Digital Technologies, Inc. | Magnetic recording media design with reduced lattice mismatch between adjacent intermediate layers |
| US12183377B2 (en) * | 2023-05-30 | 2024-12-31 | Western Digital Technologies, Inc. | Magnetic recording media with dead magnetic layer |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5750270A (en) * | 1995-02-07 | 1998-05-12 | Conner Peripherals, Inc. | Multi-layer magnetic recording media |
| US6893542B1 (en) * | 1999-09-10 | 2005-05-17 | Seagate Technology Llc | Sputtered multilayer magnetic recording media with ultra-high coercivity |
| JP4028154B2 (ja) | 2000-04-07 | 2007-12-26 | 富士通株式会社 | 磁気記録媒体及び磁気記憶装置 |
| US6656613B2 (en) * | 2000-09-27 | 2003-12-02 | Seagate Technology Llc | Multilayer magnetic recording media with columnar microstructure for improved exchange decoupling |
| US6730420B1 (en) * | 2000-10-31 | 2004-05-04 | Komag, Inc. | Magnetic thin film recording media having extremely low noise and high thermal stability |
| JP4582978B2 (ja) * | 2001-12-07 | 2010-11-17 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体の製造方法 |
| JP2003217107A (ja) * | 2002-01-17 | 2003-07-31 | Fuji Electric Co Ltd | 磁気記録媒体 |
| JP2003248914A (ja) * | 2002-02-26 | 2003-09-05 | Hitachi Ltd | 垂直磁気記録媒体及びその製造方法 |
| SG118199A1 (en) * | 2002-09-04 | 2006-01-27 | Fuji Electric Co Ltd | Perpendicular magnetic recording medium and a method for manufacturing same |
| WO2004027762A1 (en) | 2002-09-06 | 2004-04-01 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| US20040166371A1 (en) | 2003-02-26 | 2004-08-26 | Berger Andreas Klaus Dieter | Magnetic recording media with write-assist layer |
| US7470474B2 (en) * | 2003-04-07 | 2008-12-30 | Kabushiki Kaisha Toshiba | Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus including both oxide and non-oxide perpendicular magnetic layers |
| JP4171732B2 (ja) | 2003-05-15 | 2008-10-29 | 富士通株式会社 | 磁気記録媒体及び磁気記憶装置 |
| WO2005034097A1 (ja) * | 2003-09-30 | 2005-04-14 | Fujitsu Limited | 垂直磁気記録媒体，その製造方法、記録方法及び再生方法 |
| KR100601938B1 (ko) * | 2004-01-09 | 2006-07-14 | 삼성전자주식회사 | Ｃｏ계 수직자기기록매체 |
| JP2005251264A (ja) * | 2004-03-02 | 2005-09-15 | Fuji Electric Holdings Co Ltd | 垂直磁気記録媒体およびその製造方法 |
| US7235314B2 (en) * | 2004-03-11 | 2007-06-26 | Seagate Technology Llc | Inter layers for perpendicular recording media |
| US7384699B2 (en) * | 2004-08-02 | 2008-06-10 | Seagate Technology Llc | Magnetic recording media with tuned exchange coupling and method for fabricating same |
| JP2006268972A (ja) * | 2005-03-24 | 2006-10-05 | Hoya Corp | 垂直磁気記録ディスク及びその製造方法 |
| US7833640B2 (en) | 2005-08-19 | 2010-11-16 | Hitachi Global Storage Technologies Netherlands B.V. | Intermediate tri-layer structure for perpendicular recording media |
| US7846564B2 (en) | 2005-09-27 | 2010-12-07 | Seagate Technology Llc | Perpendicular magnetic recording media with magnetic anisotropy/coercivity gradient and local exchange coupling |
| JP4557880B2 (ja) | 2005-12-20 | 2010-10-06 | 株式会社東芝 | 磁気記録媒体及び磁気記録再生装置 |
| US7713389B2 (en) * | 2005-12-21 | 2010-05-11 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with ultrathin nucleation film for improved corrosion resistance and method for making the disk |
| JP2007184066A (ja) * | 2006-01-10 | 2007-07-19 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及びこれを用いた磁気記憶装置 |
| JP2008034060A (ja) * | 2006-07-31 | 2008-02-14 | Fujitsu Ltd | 垂直磁気記録媒体および磁気記憶装置 |
| JP4771222B2 (ja) * | 2006-09-13 | 2011-09-14 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体 |
| JP2008090906A (ja) * | 2006-09-29 | 2008-04-17 | Hoya Corp | 垂直磁気記録媒体の製造方法 |
| US20080090106A1 (en) | 2006-10-13 | 2008-04-17 | David Braunstein | Soft underlayer for perpendicular media with mechanical stability and corrosion resistance |
| JP2009110606A (ja) | 2007-10-30 | 2009-05-21 | Fujitsu Ltd | 磁気記録媒体、その製造方法及び磁気記憶装置 |
| JP2010009683A (ja) | 2008-06-27 | 2010-01-14 | Showa Denko Kk | 磁気記録媒体及び磁気記録装置 |
| JP2010020854A (ja) | 2008-07-11 | 2010-01-28 | Showa Denko Kk | 磁気記録媒体および情報記憶装置 |
| US7867637B2 (en) | 2008-11-17 | 2011-01-11 | Seagate Technology Llc | Low coupling oxide media (LCOM) |
| US8877359B2 (en) * | 2008-12-05 | 2014-11-04 | Wd Media (Singapore) Pte. Ltd. | Magnetic disk and method for manufacturing same |
| JP5377015B2 (ja) * | 2009-03-19 | 2013-12-25 | 昭和電工株式会社 | 磁気記録媒体 |
| JP5645443B2 (ja) | 2009-03-31 | 2014-12-24 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 垂直磁気記録媒体 |
| JP5620118B2 (ja) * | 2009-03-31 | 2014-11-05 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 垂直磁気記録媒体 |
| US9412404B2 (en) | 2009-12-15 | 2016-08-09 | HGST Netherlands B.V. | Onset layer for perpendicular magnetic recording media |
| US9093101B2 (en) * | 2011-02-28 | 2015-07-28 | Seagate Technology Llc | Stack including a magnetic zero layer |
-
2011
- 2011-02-28 US US13/037,288 patent/US9093101B2/en active Active
-
2012
- 2012-02-22 SG SG10201500452SA patent/SG10201500452SA/en unknown
- 2012-02-22 SG SG2012012563A patent/SG183646A1/en unknown
- 2012-02-24 TW TW101106293A patent/TWI564886B/zh not_active IP Right Cessation
- 2012-02-27 CN CN2012101161213A patent/CN102682789A/zh active Pending
- 2012-02-27 JP JP2012039799A patent/JP5923337B2/ja not_active Expired - Fee Related
- 2012-02-27 DE DE102012003821A patent/DE102012003821A1/de not_active Withdrawn
- 2012-02-28 MY MYPI2012000887A patent/MY180827A/en unknown
-
2015
- 2015-07-24 US US14/808,063 patent/US9734857B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201500452SA (en) | 2015-03-30 |
| DE102012003821A1 (de) | 2012-09-20 |
| US20150332721A1 (en) | 2015-11-19 |
| TW201301276A (zh) | 2013-01-01 |
| SG183646A1 (en) | 2012-09-27 |
| US9093101B2 (en) | 2015-07-28 |
| MY180827A (en) | 2020-12-09 |
| CN102682789A (zh) | 2012-09-19 |
| JP2012181908A (ja) | 2012-09-20 |
| TWI564886B (zh) | 2017-01-01 |
| US9734857B2 (en) | 2017-08-15 |
| US20120219827A1 (en) | 2012-08-30 |
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