JP5908370B2 - 表面増強ラマン散乱ユニット - Google Patents

表面増強ラマン散乱ユニット Download PDF

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Publication number
JP5908370B2
JP5908370B2 JP2012178767A JP2012178767A JP5908370B2 JP 5908370 B2 JP5908370 B2 JP 5908370B2 JP 2012178767 A JP2012178767 A JP 2012178767A JP 2012178767 A JP2012178767 A JP 2012178767A JP 5908370 B2 JP5908370 B2 JP 5908370B2
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JP
Japan
Prior art keywords
raman scattering
enhanced raman
substrate
gap
scattering unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2012178767A
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English (en)
Japanese (ja)
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JP2014037971A5 (enExample
JP2014037971A (ja
Inventor
芳弘 丸山
芳弘 丸山
柴山　勝己
勝己 柴山
将師 伊藤
将師 伊藤
徹 廣畑
徹 廣畑
宏記 亀井
宏記 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2012178767A priority Critical patent/JP5908370B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to PCT/JP2013/071704 priority patent/WO2014025035A1/ja
Priority to CN201380042452.XA priority patent/CN104520696B/zh
Priority to US14/420,502 priority patent/US9863883B2/en
Priority to EP13828081.3A priority patent/EP2884265A4/en
Priority to EP13827643.1A priority patent/EP2884264B1/en
Priority to DE112013004006.9T priority patent/DE112013004006B4/de
Priority to CN201380040860.1A priority patent/CN104508466B/zh
Priority to US14/420,404 priority patent/US9976961B2/en
Priority to TW102128772A priority patent/TWI627128B/zh
Priority to US14/420,510 priority patent/US9863884B2/en
Priority to PCT/JP2013/071699 priority patent/WO2014025030A1/ja
Priority to TW102128717A priority patent/TWI604186B/zh
Priority to CN201380041032.XA priority patent/CN104508467B/zh
Priority to PCT/JP2013/071707 priority patent/WO2014025037A1/ja
Publication of JP2014037971A publication Critical patent/JP2014037971A/ja
Publication of JP2014037971A5 publication Critical patent/JP2014037971A5/ja
Application granted granted Critical
Publication of JP5908370B2 publication Critical patent/JP5908370B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous

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  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2012178767A 2012-08-10 2012-08-10 表面増強ラマン散乱ユニット Expired - Fee Related JP5908370B2 (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP2012178767A JP5908370B2 (ja) 2012-08-10 2012-08-10 表面増強ラマン散乱ユニット
US14/420,510 US9863884B2 (en) 2012-08-10 2013-08-09 Surface-enhanced Raman scattering element, and method for producing same
US14/420,502 US9863883B2 (en) 2012-08-10 2013-08-09 Surface-enhanced raman scattering element
EP13828081.3A EP2884265A4 (en) 2012-08-10 2013-08-09 SURFACE-REINFORCED RAM SPREADING ELEMENT
EP13827643.1A EP2884264B1 (en) 2012-08-10 2013-08-09 Surface-enhanced raman scattering element, and method for producing same
DE112013004006.9T DE112013004006B4 (de) 2012-08-10 2013-08-09 Element zur oberflächenverstärkten Ramanstreuung
CN201380040860.1A CN104508466B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件
US14/420,404 US9976961B2 (en) 2012-08-10 2013-08-09 Surface-enhanced raman scattering element including a conductor layer having a base part and a plurality of protusions
PCT/JP2013/071704 WO2014025035A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子
CN201380042452.XA CN104520696B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件及其制造方法
PCT/JP2013/071699 WO2014025030A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子
TW102128717A TWI604186B (zh) 2012-08-10 2013-08-09 Surface Enhanced Raman Scattering Element
CN201380041032.XA CN104508467B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件
PCT/JP2013/071707 WO2014025037A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子及びその製造方法
TW102128772A TWI627128B (zh) 2012-08-10 2013-08-09 Surface enhanced Raman scattering element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012178767A JP5908370B2 (ja) 2012-08-10 2012-08-10 表面増強ラマン散乱ユニット

Publications (3)

Publication Number Publication Date
JP2014037971A JP2014037971A (ja) 2014-02-27
JP2014037971A5 JP2014037971A5 (enExample) 2015-05-21
JP5908370B2 true JP5908370B2 (ja) 2016-04-26

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JP2012178767A Expired - Fee Related JP5908370B2 (ja) 2012-08-10 2012-08-10 表面増強ラマン散乱ユニット

Country Status (6)

Country Link
US (1) US9976961B2 (enExample)
JP (1) JP5908370B2 (enExample)
CN (1) CN104508467B (enExample)
DE (1) DE112013004006B4 (enExample)
TW (1) TWI627128B (enExample)
WO (1) WO2014025030A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2884265A4 (en) 2012-08-10 2016-09-28 Hamamatsu Photonics Kk SURFACE-REINFORCED RAM SPREADING ELEMENT
JP6023509B2 (ja) * 2012-08-10 2016-11-09 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
EP2884264B1 (en) 2012-08-10 2019-11-20 Hamamatsu Photonics K.K. Surface-enhanced raman scattering element, and method for producing same
CN107255630B (zh) 2012-08-10 2020-07-03 浜松光子学株式会社 表面增强拉曼散射元件、以及制造表面增强拉曼散射元件的方法
JP6294797B2 (ja) * 2014-09-10 2018-03-14 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
CN107075661B (zh) * 2014-09-26 2020-03-17 韩国机械研究院 形成有多个纳米间隙的基底及其制备方法
JP6564203B2 (ja) * 2015-02-26 2019-08-21 浜松ホトニクス株式会社 表面増強ラマン散乱素子及びその製造方法
CN109470682B (zh) * 2017-09-08 2024-12-10 清华大学 用于分子检测的分子载体
WO2019221298A1 (ja) * 2018-05-18 2019-11-21 Ｓｃｉｖａｘ株式会社 電磁波増強素子およびその製造方法並びに電磁波増強素子を用いた検出方法およびアミノ酸配列決定方法
TWI856328B (zh) * 2022-06-10 2024-09-21 國立臺北科技大學 一具有頂角薄膜光柵結構的基板

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JP6023509B2 (ja) * 2012-08-10 2016-11-09 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
EP2884264B1 (en) * 2012-08-10 2019-11-20 Hamamatsu Photonics K.K. Surface-enhanced raman scattering element, and method for producing same
EP2884265A4 (en) * 2012-08-10 2016-09-28 Hamamatsu Photonics Kk SURFACE-REINFORCED RAM SPREADING ELEMENT

Also Published As

Publication number Publication date
US9976961B2 (en) 2018-05-22
JP2014037971A (ja) 2014-02-27
WO2014025030A1 (ja) 2014-02-13
TWI627128B (zh) 2018-06-21
DE112013004006T5 (de) 2015-04-23
DE112013004006B4 (de) 2021-11-18
TW201410591A (zh) 2014-03-16
US20150211999A1 (en) 2015-07-30
CN104508467A (zh) 2015-04-08
CN104508467B (zh) 2017-10-20

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