CN104508467B - 表面增强拉曼散射元件 - Google Patents

表面增强拉曼散射元件 Download PDF

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Publication number
CN104508467B
CN104508467B CN201380041032.XA CN201380041032A CN104508467B CN 104508467 B CN104508467 B CN 104508467B CN 201380041032 A CN201380041032 A CN 201380041032A CN 104508467 B CN104508467 B CN 104508467B
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China
Prior art keywords
raman scattering
enhanced raman
scattering element
substrate
sers
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Expired - Fee Related
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CN201380041032.XA
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English (en)
Chinese (zh)
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CN104508467A (zh
Inventor
丸山芳弘
柴山胜己
伊藤将师
广畑彻
龟井宏记
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous

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  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201380041032.XA 2012-08-10 2013-08-09 表面增强拉曼散射元件 Expired - Fee Related CN104508467B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012178767A JP5908370B2 (ja) 2012-08-10 2012-08-10 表面増強ラマン散乱ユニット
JP2012-178767 2012-08-10
PCT/JP2013/071699 WO2014025030A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子

Publications (2)

Publication Number Publication Date
CN104508467A CN104508467A (zh) 2015-04-08
CN104508467B true CN104508467B (zh) 2017-10-20

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CN201380041032.XA Expired - Fee Related CN104508467B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件

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Country Link
US (1) US9976961B2 (enExample)
JP (1) JP5908370B2 (enExample)
CN (1) CN104508467B (enExample)
DE (1) DE112013004006B4 (enExample)
TW (1) TWI627128B (enExample)
WO (1) WO2014025030A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2884265A4 (en) 2012-08-10 2016-09-28 Hamamatsu Photonics Kk SURFACE-REINFORCED RAM SPREADING ELEMENT
JP6023509B2 (ja) * 2012-08-10 2016-11-09 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
EP2884264B1 (en) 2012-08-10 2019-11-20 Hamamatsu Photonics K.K. Surface-enhanced raman scattering element, and method for producing same
CN107255630B (zh) 2012-08-10 2020-07-03 浜松光子学株式会社 表面增强拉曼散射元件、以及制造表面增强拉曼散射元件的方法
JP6294797B2 (ja) * 2014-09-10 2018-03-14 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
CN107075661B (zh) * 2014-09-26 2020-03-17 韩国机械研究院 形成有多个纳米间隙的基底及其制备方法
JP6564203B2 (ja) * 2015-02-26 2019-08-21 浜松ホトニクス株式会社 表面増強ラマン散乱素子及びその製造方法
CN109470682B (zh) * 2017-09-08 2024-12-10 清华大学 用于分子检测的分子载体
WO2019221298A1 (ja) * 2018-05-18 2019-11-21 Ｓｃｉｖａｘ株式会社 電磁波増強素子およびその製造方法並びに電磁波増強素子を用いた検出方法およびアミノ酸配列決定方法
TWI856328B (zh) * 2022-06-10 2024-09-21 國立臺北科技大學 一具有頂角薄膜光柵結構的基板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101057132A (zh) * 2004-11-04 2007-10-17 Meso光子学有限公司 用于增强的拉曼光谱学的金属纳米孔光子晶体
JP2009236830A (ja) * 2008-03-28 2009-10-15 Sumitomo Precision Prod Co Ltd 被分析物担体、及び、その製造方法
JP2011107032A (ja) * 2009-11-19 2011-06-02 Omron Corp 表面プラズモン共鳴チップ

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544867U (ja) 1991-11-18 1993-06-15 三洋電機株式会社 測定装置の包装体
JPH07260646A (ja) 1994-03-17 1995-10-13 Nikon Corp 試料容器
US7267948B2 (en) 1997-11-26 2007-09-11 Ut-Battelle, Llc SERS diagnostic platforms, methods and systems microarrays, biosensors and biochips
EP0984269A1 (de) 1998-08-04 2000-03-08 Alusuisse Technology & Management AG (Alusuisse Technology & Management SA) (Alusuisse Technology & Management Ltd.) Trägersubstrat für Raman-spektrometrische Analysen
US20040023046A1 (en) 1998-08-04 2004-02-05 Falko Schlottig Carrier substrate for Raman spectrometric analysis
JP2003026232A (ja) 2001-07-18 2003-01-29 Seiko Epson Corp 梱包方法及び緩衝材
US7460224B2 (en) 2005-12-19 2008-12-02 Opto Trace Technologies, Inc. Arrays of nano structures for surface-enhanced Raman scattering
US7242469B2 (en) 2003-05-27 2007-07-10 Opto Trace Technologies, Inc. Applications of Raman scattering probes
JP2007509322A (ja) 2003-10-17 2007-04-12 インテル・コーポレーション 表面増感コヒーレント反ストークスラマン分光を用いた少数の分子を検出する方法および装置
CN100357738C (zh) 2004-03-26 2007-12-26 博奥生物有限公司 一种检测小分子化合物的方法
RU2361193C2 (ru) 2004-05-19 2009-07-10 Вп Холдинг, Ллс Оптический датчик с многослойной плазмонной структурой для усовершенствованного обнаружения химических групп посредством sers
JP2005337771A (ja) 2004-05-25 2005-12-08 National Institute For Materials Science ナノ構造を有する集積化ピラー構造光学素子
US7450227B2 (en) * 2004-09-22 2008-11-11 The Penn State Research Foundation Surface enhanced Raman spectroscopy (SERS) substrates exhibiting uniform high enhancement and stability
GB0424458D0 (en) * 2004-11-04 2004-12-08 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
US7245370B2 (en) 2005-01-06 2007-07-17 Hewlett-Packard Development Company, L.P. Nanowires for surface-enhanced Raman scattering molecular sensors
US7236242B2 (en) 2005-01-27 2007-06-26 Hewlett-Packard Development Company, L.P. Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same
US7586601B2 (en) 2005-06-14 2009-09-08 Ebstein Steven M Applications of laser-processed substrate for molecular diagnostics
US7528948B2 (en) 2006-07-25 2009-05-05 Hewlett-Packard Development Company, L.P. Controllable surface enhanced Raman spectroscopy
JP5221549B2 (ja) 2006-10-12 2013-06-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 試薬層を有した高速バイオセンサ
US7388661B2 (en) * 2006-10-20 2008-06-17 Hewlett-Packard Development Company, L.P. Nanoscale structures, systems, and methods for use in nano-enhanced raman spectroscopy (NERS)
JP2008196992A (ja) 2007-02-14 2008-08-28 National Institute Of Information & Communication Technology 表面プラズモンの電場増強構造
JP5397577B2 (ja) 2007-03-05 2014-01-22 オムロン株式会社 表面プラズモン共鳴センサ及び当該センサ用チップ
JP2008268059A (ja) 2007-04-23 2008-11-06 St Japan Inc 試料ホルダ
JP4993360B2 (ja) 2007-06-08 2012-08-08 富士フイルム株式会社 微細構造体及びその製造方法、光電場増強デバイス
JP2009047623A (ja) 2007-08-22 2009-03-05 Jiyasuko Eng Kk 透過測定用ホルダ
JP2009103643A (ja) 2007-10-25 2009-05-14 Fujifilm Corp 表面増強ラマン分光装置
US8115920B2 (en) 2007-11-14 2012-02-14 3M Innovative Properties Company Method of making microarrays
JP2009222507A (ja) 2008-03-14 2009-10-01 National Institute Of Advanced Industrial & Technology 微量物質検出素子
CN101281133B (zh) 2008-05-12 2010-08-18 中国科学院合肥物质科学研究院 具有大面积微纳树状结构阵列的表面增强拉曼活性基底的制备方法
JP4980324B2 (ja) 2008-09-30 2012-07-18 テルモ株式会社 成分測定装置
US8953159B2 (en) 2008-10-03 2015-02-10 The Board Of Trustees Of The University Of Illinois Surface enhanced raman spectroscopy nanodome biosensors and methods of manufacturing the same
US8531658B2 (en) 2008-10-30 2013-09-10 Nippon Telegraph And Telephone Corporation Measuring chip device using magnets for installation/removal
WO2010056258A1 (en) 2008-11-17 2010-05-20 Hewlett-Packard Development Company, L.P. A substrate for surface enhanced raman scattering (sers)
EP2394775B1 (en) 2009-02-09 2019-04-03 Hamamatsu Photonics K.K. Workpiece cutting method
EP2419733A4 (en) 2009-04-13 2013-12-25 Univ Leland Stanford Junior METHODS AND DEVICES FOR DETECTING THE PRESENCE OF AN ANALYTE IN A SAMPLE
US8223331B2 (en) 2009-06-19 2012-07-17 Hewlett-Packard Development Company, L.P. Signal-amplification device for surface enhanced raman spectroscopy
JP2011021085A (ja) 2009-07-15 2011-02-03 Yokohama Rubber Co Ltd:The 空気入りタイヤ用ゴム組成物
JP2011033518A (ja) 2009-08-04 2011-02-17 Toray Res Center:Kk 表面増強ラマン分光分析方法
US8659391B2 (en) 2009-08-18 2014-02-25 Indian Institute Of Technology Madras Multielement and multiproperty tagging
CN102483354B (zh) 2009-09-17 2015-12-16 惠普发展公司，有限责任合伙企业 用于表面增强拉曼光谱术的电驱动设备
TWI523950B (zh) 2009-09-30 2016-03-01 凸版印刷股份有限公司 核酸分析裝置
JP2011075348A (ja) 2009-09-30 2011-04-14 Nidek Co Ltd 試験片の製造方法
US8767202B2 (en) * 2009-10-23 2014-07-01 Danmarks Tekniske Universitet SERS substrate and a method of providing a SERS substrate
US20110166045A1 (en) * 2009-12-01 2011-07-07 Anuj Dhawan Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2343382A1 (en) 2009-12-24 2011-07-13 Imec Plasmonic force manipulation in nanostructures
JP5574783B2 (ja) 2010-03-31 2014-08-20 富士フイルム株式会社 蛍光検出装置および方法
US8269963B2 (en) 2010-04-30 2012-09-18 Hewlett-Packard Development Company, L.P. Tunable apparatus for performing SERS
US8314932B2 (en) 2010-04-30 2012-11-20 Hewlett-Packard Development Company, L.P. Surface-enhanced Raman spectroscopy device and a mold for creating and a method for making the same
US8358407B2 (en) 2010-04-30 2013-01-22 Hewlett-Packard Development Company, L.P. Enhancing signals in Surface Enhanced Raman Spectroscopy (SERS)
CN105911814A (zh) * 2010-05-21 2016-08-31 普林斯顿大学 用于增强局部电场、光吸收、光辐射、材料检测的结构以及用于制作和使用此结构的方法
JP5779963B2 (ja) 2011-04-28 2015-09-16 ナノフォトン株式会社 観察試料密閉容器
US9080980B2 (en) 2011-07-27 2015-07-14 Hewlett-Packard Development Company, L.P. Surface enhanced raman spectroscopy employing a nanorod in a surface indentation
CN103930780B (zh) 2011-10-18 2016-01-20 惠普发展公司，有限责任合伙企业 分子传感装置
TWI469917B (zh) 2012-08-09 2015-01-21 Nat Univ Tsing Hua 具表面增強拉曼散射活性之結構、其製造方法及其偵測裝置
JP6055234B2 (ja) * 2012-08-10 2016-12-27 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
WO2014025033A1 (ja) 2012-08-10 2014-02-13 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット及びその使用方法
CN107255630B (zh) * 2012-08-10 2020-07-03 浜松光子学株式会社 表面增强拉曼散射元件、以及制造表面增强拉曼散射元件的方法
WO2014025034A1 (ja) 2012-08-10 2014-02-13 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
JP5945192B2 (ja) * 2012-08-10 2016-07-05 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
JP6023509B2 (ja) * 2012-08-10 2016-11-09 浜松ホトニクス株式会社 表面増強ラマン散乱ユニット
EP2884264B1 (en) * 2012-08-10 2019-11-20 Hamamatsu Photonics K.K. Surface-enhanced raman scattering element, and method for producing same
EP2884265A4 (en) * 2012-08-10 2016-09-28 Hamamatsu Photonics Kk SURFACE-REINFORCED RAM SPREADING ELEMENT

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101057132A (zh) * 2004-11-04 2007-10-17 Meso光子学有限公司 用于增强的拉曼光谱学的金属纳米孔光子晶体
EP2278301A1 (en) * 2004-11-04 2011-01-26 Renishaw Diagnostics Limited Metal nano-void photonic crystal for enhanced raman spectroscopy
JP2009236830A (ja) * 2008-03-28 2009-10-15 Sumitomo Precision Prod Co Ltd 被分析物担体、及び、その製造方法
JP2011107032A (ja) * 2009-11-19 2011-06-02 Omron Corp 表面プラズモン共鳴チップ

Also Published As

Publication number Publication date
US9976961B2 (en) 2018-05-22
JP5908370B2 (ja) 2016-04-26
JP2014037971A (ja) 2014-02-27
WO2014025030A1 (ja) 2014-02-13
TWI627128B (zh) 2018-06-21
DE112013004006T5 (de) 2015-04-23
DE112013004006B4 (de) 2021-11-18
TW201410591A (zh) 2014-03-16
US20150211999A1 (en) 2015-07-30
CN104508467A (zh) 2015-04-08

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