JP5907011B2 - 光センサ - Google Patents

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Publication number
JP5907011B2
JP5907011B2 JP2012197339A JP2012197339A JP5907011B2 JP 5907011 B2 JP5907011 B2 JP 5907011B2 JP 2012197339 A JP2012197339 A JP 2012197339A JP 2012197339 A JP2012197339 A JP 2012197339A JP 5907011 B2 JP5907011 B2 JP 5907011B2
Authority
JP
Japan
Prior art keywords
light
light receiving
incident
unit
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012197339A
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English (en)
Japanese (ja)
Other versions
JP2014052302A5 (enExample
JP2014052302A (ja
Inventor
真紀子 杉浦
杉浦　　真紀子
貴彦 吉田
貴彦 吉田
大塚　澄
澄 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2012197339A priority Critical patent/JP5907011B2/ja
Priority to CN201380039851.0A priority patent/CN104508438B/zh
Priority to US14/406,541 priority patent/US9166081B2/en
Priority to DE112013005039.0T priority patent/DE112013005039B4/de
Priority to PCT/JP2013/005270 priority patent/WO2014038206A1/ja
Publication of JP2014052302A publication Critical patent/JP2014052302A/ja
Publication of JP2014052302A5 publication Critical patent/JP2014052302A5/ja
Application granted granted Critical
Publication of JP5907011B2 publication Critical patent/JP5907011B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0271—Housings; Attachments or accessories for photometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0462—Slit arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/06—Restricting the angle of incident light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01W—METEOROLOGY
    • G01W1/00—Meteorology
    • G01W1/12—Sunshine duration recorders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01W—METEOROLOGY
    • G01W1/00—Meteorology
    • G01W1/14—Rainfall or precipitation gauges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
    • B60S1/00—Cleaning of vehicles
    • B60S1/02—Cleaning windscreens, windows or optical devices
    • B60S1/04—Wipers or the like, e.g. scrapers
    • B60S1/06—Wipers or the like, e.g. scrapers characterised by the drive
    • B60S1/08—Wipers or the like, e.g. scrapers characterised by the drive electrically driven
    • B60S1/0818—Wipers or the like, e.g. scrapers characterised by the drive electrically driven including control systems responsive to external conditions, e.g. by detection of moisture, dirt or the like
    • B60S1/0822—Wipers or the like, e.g. scrapers characterised by the drive electrically driven including control systems responsive to external conditions, e.g. by detection of moisture, dirt or the like characterized by the arrangement or type of detection means
    • B60S1/0833—Optical rain sensor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental Sciences (AREA)
  • Ecology (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Atmospheric Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
JP2012197339A 2012-09-07 2012-09-07 光センサ Expired - Fee Related JP5907011B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012197339A JP5907011B2 (ja) 2012-09-07 2012-09-07 光センサ
CN201380039851.0A CN104508438B (zh) 2012-09-07 2013-09-05 光传感器
US14/406,541 US9166081B2 (en) 2012-09-07 2013-09-05 Optical sensor
DE112013005039.0T DE112013005039B4 (de) 2012-09-07 2013-09-05 Optischer Sensor
PCT/JP2013/005270 WO2014038206A1 (ja) 2012-09-07 2013-09-05 光センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012197339A JP5907011B2 (ja) 2012-09-07 2012-09-07 光センサ

Publications (3)

Publication Number Publication Date
JP2014052302A JP2014052302A (ja) 2014-03-20
JP2014052302A5 JP2014052302A5 (enExample) 2014-11-06
JP5907011B2 true JP5907011B2 (ja) 2016-04-20

Family

ID=50236835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012197339A Expired - Fee Related JP5907011B2 (ja) 2012-09-07 2012-09-07 光センサ

Country Status (5)

Country Link
US (1) US9166081B2 (enExample)
JP (1) JP5907011B2 (enExample)
CN (1) CN104508438B (enExample)
DE (1) DE112013005039B4 (enExample)
WO (1) WO2014038206A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3211453A1 (en) * 2016-02-26 2017-08-30 ams AG Optical proximity sensor arrangement and method for producing an optical proximity sensor arrangement
US10718603B2 (en) * 2016-10-13 2020-07-21 Six Degrees Space Ltd Method and apparatus for indoor positioning
CN106686215B (zh) * 2016-12-06 2022-03-25 Oppo广东移动通信有限公司 传感器组件以及移动终端
TWI637502B (zh) * 2017-12-05 2018-10-01 義明科技股份有限公司 光學感測裝置以及光學感測模組
JP2024124181A (ja) * 2023-03-02 2024-09-12 ローム株式会社 光検出装置および光検出システム

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177416A (ja) * 1992-12-07 1994-06-24 Nippondenso Co Ltd 光センサー
DE4406398A1 (de) 1994-02-26 1995-08-31 Bosch Gmbh Robert Regensensor
US5428215A (en) * 1994-05-27 1995-06-27 Her Majesty The Queen In Right Of Canada, As Represented By Minister Of National Defence Of Her Majesty's Canadian Government Digital high angular resolution laser irradiation detector (HARLID)
DE19933642A1 (de) * 1999-07-17 2001-03-08 Bosch Gmbh Robert Lichtempfindliche Sensoreinheit, insbesondere zum automatischen Schalten von Beleuchtungseinrichtungen
JP2004198214A (ja) * 2002-12-18 2004-07-15 Denso Corp 雨滴および光検出装置
JP2005233728A (ja) * 2004-02-18 2005-09-02 Denso Corp 光センサ装置
JP4772585B2 (ja) 2006-05-10 2011-09-14 浜松ホトニクス株式会社 光検出器
DE102006040790B4 (de) 2006-08-31 2012-04-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflexkoppler mit integriertem organischen Lichtemitter sowie Verwendung eines solchen Reflexkopplers
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP4621270B2 (ja) 2007-07-13 2011-01-26 キヤノン株式会社 光学フィルタ
KR20100098658A (ko) * 2007-12-25 2010-09-08 세이코 인스트루 가부시키가이샤 광 검출 장치, 및 화상 표시 장치
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP4973692B2 (ja) * 2009-05-27 2012-07-11 株式会社デンソー 移動体用光センサ装置
JP5077780B2 (ja) * 2009-07-06 2012-11-21 株式会社デンソー 光検出装置
JP2011061133A (ja) * 2009-09-14 2011-03-24 Zycube:Kk 半導体イメージセンサとその製造法
US8492699B2 (en) * 2009-09-22 2013-07-23 Intersil Americas Inc. Photodetectors useful as ambient light sensors having an optical filter rejecting a portion of infrared light
JP5998426B2 (ja) 2010-03-05 2016-09-28 セイコーエプソン株式会社 光学センサー及び電子機器
JP5118715B2 (ja) * 2010-03-11 2013-01-16 株式会社東芝 固体撮像装置
EP2400559A1 (de) * 2010-06-22 2011-12-28 SMA Solar Technology AG Einstrahlungssensor für solare Lichtintensität
US8901480B2 (en) 2010-09-10 2014-12-02 Denso Corporation Optical sensor having a blocking film disposed over light receiving elements on a semiconductor substrate via a light transparent film for detecting an incident angle of light
JP5375840B2 (ja) * 2011-01-06 2013-12-25 株式会社デンソー 光センサ
CN201804019U (zh) * 2010-09-24 2011-04-20 浙江美佳机电科技有限公司 太阳能风光雨传感器
JP2012222742A (ja) * 2011-04-13 2012-11-12 Sony Corp 撮像素子および撮像装置
JP5760811B2 (ja) * 2011-07-28 2015-08-12 ソニー株式会社 固体撮像素子および撮像システム
JP6029266B2 (ja) * 2011-08-09 2016-11-24 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法

Also Published As

Publication number Publication date
CN104508438A (zh) 2015-04-08
DE112013005039B4 (de) 2022-07-21
DE112013005039T5 (de) 2015-07-30
US9166081B2 (en) 2015-10-20
WO2014038206A1 (ja) 2014-03-13
JP2014052302A (ja) 2014-03-20
CN104508438B (zh) 2016-07-13
US20150179830A1 (en) 2015-06-25

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