JP5906022B2 - マクロピンハイブリッド相互接続アレイ及びその製造方法 - Google Patents

マクロピンハイブリッド相互接続アレイ及びその製造方法 Download PDF

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Publication number
JP5906022B2
JP5906022B2 JP2011088708A JP2011088708A JP5906022B2 JP 5906022 B2 JP5906022 B2 JP 5906022B2 JP 2011088708 A JP2011088708 A JP 2011088708A JP 2011088708 A JP2011088708 A JP 2011088708A JP 5906022 B2 JP5906022 B2 JP 5906022B2
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array
substrate
interconnect
macropin
solder
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JP2011228704A (ja
JP2011228704A5 (enExample
Inventor
チャールズ・ジェラード・ウォイチク
ジョン・エリック・トカチク
ブライアン・デビッド・ヤノフ
タン・ツァン
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General Electric Co
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General Electric Co
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    • Y10T29/49—Method of mechanical manufacture
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US20130000963A1 (en) 2013-01-03
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