JP5904734B2 - グラフェン発光素子及びその製造方法 - Google Patents

グラフェン発光素子及びその製造方法 Download PDF

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Publication number
JP5904734B2
JP5904734B2 JP2011202388A JP2011202388A JP5904734B2 JP 5904734 B2 JP5904734 B2 JP 5904734B2 JP 2011202388 A JP2011202388 A JP 2011202388A JP 2011202388 A JP2011202388 A JP 2011202388A JP 5904734 B2 JP5904734 B2 JP 5904734B2
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graphene
type
active
emitting device
light emitting
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JP2011202388A
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Japanese (ja)
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JP2012064944A5 (cg-RX-API-DMAC7.html
JP2012064944A (ja
Inventor
ウォング スン−ウォン
ウォング スン−ウォン
コウ ゲウン−ウー
コウ ゲウン−ウー
シム スン−ヒュン
シム スン−ヒュン
チュング フン−ジェ
チュング フン−ジェ
ハン−キュ−ソン
ソネ チェオル−ソー
ソネ チェオル−ソー
リー ジン−ヒュン
リー ジン−ヒュン
コウ ヒュン−デュク
コウ ヒュン−デュク
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020110092511A external-priority patent/KR101850538B1/ko
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Publication of JP2012064944A5 publication Critical patent/JP2012064944A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60

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  • Led Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
JP2011202388A 2010-09-16 2011-09-15 グラフェン発光素子及びその製造方法 Active JP5904734B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100091259 2010-09-16
KR10-2010-0091259 2010-09-16
KR10-2011-0092511 2011-09-14
KR1020110092511A KR101850538B1 (ko) 2010-09-16 2011-09-14 그래핀 발광소자 및 그 제조방법

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JP2012064944A JP2012064944A (ja) 2012-03-29
JP2012064944A5 JP2012064944A5 (cg-RX-API-DMAC7.html) 2012-12-20
JP5904734B2 true JP5904734B2 (ja) 2016-04-20

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US (1) US9166099B2 (cg-RX-API-DMAC7.html)
JP (1) JP5904734B2 (cg-RX-API-DMAC7.html)
CN (1) CN102403430B (cg-RX-API-DMAC7.html)

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CN105303985B (zh) * 2015-11-24 2019-02-26 深圳市华星光电技术有限公司 石墨烯显示器及其显示驱动方法
CN105449067B (zh) * 2015-12-31 2017-12-19 白德旭 一种石墨烯led芯片及其制备方法
CN105607346A (zh) * 2016-03-28 2016-05-25 深圳市华星光电技术有限公司 一种石墨烯背光模组及液晶显示装置
TWI593134B (zh) * 2016-05-19 2017-07-21 Method and structure for manufacturing graphene quantum dot on light-emitting diode
CN105789469B (zh) * 2016-05-30 2017-12-29 京东方科技集团股份有限公司 一种发光单元及制作方法、显示面板及显示装置
CN105869574B (zh) * 2016-06-07 2017-03-29 京东方科技集团股份有限公司 一种像素驱动电路及其驱动方法、阵列基板及显示装置
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CN102403430B (zh) 2016-08-03
CN102403430A (zh) 2012-04-04
JP2012064944A (ja) 2012-03-29
US20120068152A1 (en) 2012-03-22
US9166099B2 (en) 2015-10-20

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