JP2012064944A5 - - Google Patents

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Publication number
JP2012064944A5
JP2012064944A5 JP2011202388A JP2011202388A JP2012064944A5 JP 2012064944 A5 JP2012064944 A5 JP 2012064944A5 JP 2011202388 A JP2011202388 A JP 2011202388A JP 2011202388 A JP2011202388 A JP 2011202388A JP 2012064944 A5 JP2012064944 A5 JP 2012064944A5
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Japan
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graphene
width
section
nanoribbon
emitting device
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JP2011202388A
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English (en)
Japanese (ja)
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JP2012064944A (ja
JP5904734B2 (ja
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Priority claimed from KR1020110092511A external-priority patent/KR101850538B1/ko
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JP2011202388A 2010-09-16 2011-09-15 グラフェン発光素子及びその製造方法 Active JP5904734B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100091259 2010-09-16
KR10-2010-0091259 2010-09-16
KR10-2011-0092511 2011-09-14
KR1020110092511A KR101850538B1 (ko) 2010-09-16 2011-09-14 그래핀 발광소자 및 그 제조방법

Publications (3)

Publication Number Publication Date
JP2012064944A JP2012064944A (ja) 2012-03-29
JP2012064944A5 true JP2012064944A5 (cg-RX-API-DMAC7.html) 2012-12-20
JP5904734B2 JP5904734B2 (ja) 2016-04-20

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JP2011202388A Active JP5904734B2 (ja) 2010-09-16 2011-09-15 グラフェン発光素子及びその製造方法

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US (1) US9166099B2 (cg-RX-API-DMAC7.html)
JP (1) JP5904734B2 (cg-RX-API-DMAC7.html)
CN (1) CN102403430B (cg-RX-API-DMAC7.html)

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KR101487729B1 (ko) * 2013-07-03 2015-01-29 코닝정밀소재 주식회사 광전소자용 기판 및 이를 포함하는 광전소자
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CN105016328B (zh) * 2014-04-25 2017-06-06 中国科学院物理研究所 一种在碳化硅衬底上生长p型石墨烯的方法
CN106536404A (zh) * 2014-05-26 2017-03-22 威廉马歇莱思大学 石墨烯量子点‑聚合物复合材料及其制备方法
JP6636459B2 (ja) 2014-05-27 2020-01-29 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 半導体構造と超格子とを用いた高度電子デバイス
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
WO2015181648A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited An optoelectronic device
CN106415854B (zh) 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
CN104124348B (zh) * 2014-07-04 2016-08-24 清华大学 颜色可调的石墨烯基薄膜电致发光器件及其制备方法
WO2016105481A2 (en) * 2014-12-24 2016-06-30 The Trustees Of Columbia University In The City Of New York Light emission from electrically biased graphene
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US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
CN105303985B (zh) * 2015-11-24 2019-02-26 深圳市华星光电技术有限公司 石墨烯显示器及其显示驱动方法
CN105449067B (zh) * 2015-12-31 2017-12-19 白德旭 一种石墨烯led芯片及其制备方法
CN105607346A (zh) * 2016-03-28 2016-05-25 深圳市华星光电技术有限公司 一种石墨烯背光模组及液晶显示装置
TWI593134B (zh) * 2016-05-19 2017-07-21 Method and structure for manufacturing graphene quantum dot on light-emitting diode
CN105789469B (zh) * 2016-05-30 2017-12-29 京东方科技集团股份有限公司 一种发光单元及制作方法、显示面板及显示装置
CN105869574B (zh) * 2016-06-07 2017-03-29 京东方科技集团股份有限公司 一种像素驱动电路及其驱动方法、阵列基板及显示装置
CN106197687B (zh) * 2016-07-19 2019-03-05 中国科学院重庆绿色智能技术研究院 一种基于石墨烯量子点的微测辐射热计
CN106374022B (zh) * 2016-10-18 2018-07-24 广东东邦科技有限公司 基于多层石墨烯量子碳基材料的光源器件及其制备方法
CN106876539B (zh) * 2017-02-17 2019-04-05 深圳市华星光电技术有限公司 石墨烯发光晶体管及其制作方法、主动石墨烯发光显示器
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