JP5901630B2 - メタライゼーション処理、混合物、および、電子デバイス - Google Patents
メタライゼーション処理、混合物、および、電子デバイス Download PDFInfo
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- JP5901630B2 JP5901630B2 JP2013519184A JP2013519184A JP5901630B2 JP 5901630 B2 JP5901630 B2 JP 5901630B2 JP 2013519184 A JP2013519184 A JP 2013519184A JP 2013519184 A JP2013519184 A JP 2013519184A JP 5901630 B2 JP5901630 B2 JP 5901630B2
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- metal
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- copper
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- 239000000203 mixture Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 77
- 230000008569 process Effects 0.000 title description 21
- 238000001465 metallisation Methods 0.000 title description 15
- 239000002923 metal particle Substances 0.000 claims description 154
- 229910052751 metal Inorganic materials 0.000 claims description 130
- 239000002184 metal Substances 0.000 claims description 128
- 239000011159 matrix material Substances 0.000 claims description 122
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 83
- 229910052802 copper Inorganic materials 0.000 claims description 81
- 239000010949 copper Substances 0.000 claims description 81
- 238000000151 deposition Methods 0.000 claims description 81
- 230000008021 deposition Effects 0.000 claims description 60
- 238000007747 plating Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 59
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 34
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 34
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 23
- 229910017052 cobalt Inorganic materials 0.000 claims description 22
- 239000010941 cobalt Substances 0.000 claims description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 17
- 229910052741 iridium Inorganic materials 0.000 claims description 17
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims description 17
- 239000011733 molybdenum Substances 0.000 claims description 17
- 229910052762 osmium Inorganic materials 0.000 claims description 17
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 17
- 229910052702 rhenium Inorganic materials 0.000 claims description 17
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 17
- 229910052703 rhodium Inorganic materials 0.000 claims description 17
- 239000010948 rhodium Substances 0.000 claims description 17
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 17
- 229910052725 zinc Inorganic materials 0.000 claims description 17
- 239000011701 zinc Substances 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- 239000011135 tin Substances 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 8
- 229910001431 copper ion Inorganic materials 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 6
- 239000003002 pH adjusting agent Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- 229910001096 P alloy Inorganic materials 0.000 claims description 5
- 229910001080 W alloy Inorganic materials 0.000 claims description 5
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 claims description 5
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- 239000006172 buffering agent Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 75
- 235000012431 wafers Nutrition 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 229910000881 Cu alloy Inorganic materials 0.000 description 11
- 230000008901 benefit Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000872 buffer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 238000005112 continuous flow technique Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- -1 but not limited to Chemical compound 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1834—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/20—Electroplating: Baths therefor from solutions of iron
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/22—Electroplating: Baths therefor from solutions of zinc
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
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- C—CHEMISTRY; METALLURGY
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Description
適用例1:半導体デバイスを製造する方法であって、
基板を準備する工程と、
金属粒子および無電解析出溶液を含む混合物を準備して、金属マトリクスを無電解析出させると共に前記金属粒子を共析出させることによって、もしくは、金属粒子および電気化学めっき溶液を含む混合物を準備して、金属マトリクスを電気化学めっきすると共に前記金属粒子を共析出させることによって、前記基板上または前記基板内に導電体を形成する工程と、
を備える、方法。
適用例2:適用例1に記載の方法であって、前記金属粒子および前記金属マトリクスは、実質的に同じ組成を有する、方法。
適用例3:適用例1に記載の方法であって、前記金属粒子および前記金属マトリクスは、異なる組成を有する、方法。
適用例4:適用例1に記載の方法であって、前記金属マトリクスは銅を含み、前記金属粒子は銅を含む、方法。
適用例5:適用例1に記載の方法であって、前記金属マトリクスは、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛の内の少なくとも1つの元素を含む、方法。
適用例6:適用例1に記載の方法であって、前記金属粒子は、周期表における実質的な純金属元素の粒子である、方法。
適用例7:適用例1に記載の方法であって、前記金属粒子は、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛からなる群より選択された少なくとも1つの元素を含む、方法。
適用例8:適用例1に記載の方法であって、前記金属粒子は30マイクロメートル未満の最大サイズを有する、方法。
適用例9:適用例1に記載の方法であって、前記金属粒子は0.1マイクロメートルから10マイクロメートルの範囲の最大サイズを有する、方法。
適用例10:適用例1に記載の方法であって、前記金属粒子は、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛からなる群より選択された少なくとも1つの元素を含み、前記粒子は30マイクロメートル未満の最大サイズを有する、方法。
適用例11:適用例1に記載の方法であって、前記金属マトリクスの結晶構造および/または結晶粒サイズは、前記金属粒子の結晶構造および/または結晶粒サイズと実質的に同じである、方法。
適用例12:適用例1に記載の方法であって、前記金属マトリクスの結晶構造および/または結晶粒サイズは、前記金属粒子の結晶構造および/または結晶粒サイズと異なる、方法。
適用例13:適用例1に記載の方法であって、
基板を準備する工程は、1または複数のビアを有する基板を準備する工程を含み、
前記基板上または前記基板内に導電体を形成する工程は、
金属粒子および無電解析出溶液を含む混合物を前記1または複数のビアに充填して、前記1または複数のビア内に金属マトリクスを無電解析出させると共に前記金属粒子を共析出させる工程、もしくは、
金属粒子および電気化学めっき溶液を含む混合物を前記1または複数のビアに充填して、前記1または複数のビア内に金属マトリクスを電気化学めっきすると共に前記金属粒子を共析出させる工程を含む、方法。
適用例14:適用例13に記載の方法であって、前記ビアへの充填は、30マイクロメートル未満の最大サイズを有する粒子を用いて実現される、方法。
適用例15:適用例13に記載の方法であって、前記ビアへの充填は、0.1マイクロメートルから10マイクロメートルの範囲の最大サイズを有する金属粒子を用いる、方法。
適用例16:基板上または基板内に銅構造を形成するための混合物であって、
銅含有粒子と、銅含有マトリクスの無電解析出のための銅イオンを含む無電解析出溶液と、を含むか、
もしくは、
銅含有粒子と、銅含有マトリクスの電気化学めっきのための銅イオンを含む電気化学めっき溶液と、を含む、混合物。
適用例17:適用例16に記載の混合物であって、前記粒子は30マイクロメートル未満の最大サイズを有する、混合物。
適用例18:適用例16に記載の混合物であって、前記粒子は0.1マイクロメートルから10マイクロメートルの範囲の最大サイズを有する、混合物。
適用例19:適用例16に記載の混合物であって、前記無電解析出溶液または前記電気化学めっき溶液は、1または複数の金属塩、1または複数の還元剤、1または複数の錯化剤、1または複数のpH調整剤、1または複数の緩衝剤、1または複数の界面活性剤、ならびに/もしくは、1または複数の添加剤を含む、混合物。
適用例20:電子デバイスであって、
1または複数の基板貫通ビアを有する基板と、
前記1または複数の基板貫通ビアの壁上のバリア層と、
銅含有マトリクスと、
前記マトリクスに埋め込まれている金属粒子と、
を備え、
前記金属粒子および前記銅含有マトリクスは、前記1または複数のビアを実質的に満たす、電子デバイス。
適用例21:適用例20に記載の電子デバイスであって、前記金属粒子は銅を含む、電子デバイス。
適用例22:適用例20に記載の電子デバイスであって、前記金属粒子は銅である、電子デバイス。
適用例23:適用例20に記載の電子デバイスであって、前記銅含有マトリクスは銅である、電子デバイス。
適用例24:適用例20に記載の電子デバイスであって、前記金属粒子は銅であり、前記銅含有マトリクスは銅である、電子デバイス。
適用例25:適用例20に記載の電子デバイスであって、前記金属粒子は銀または金を含む、電子デバイス。
適用例26:適用例20に記載の電子デバイスであって、前記バリア層は、バリア金属マトリクスに埋め込まれたバリア金属粒子を含む、電子デバイス。
適用例27:適用例20に記載の電子デバイスであって、前記基板はシリコンチップである、電子デバイス。
適用例28:適用例20に記載の電子デバイスであって、前記金属粒子は0.1マイクロメートルから10マイクロメートルの範囲のサイズを有する、電子デバイス。
Claims (30)
- 半導体デバイスを製造する方法であって、
基板を準備する工程と、
0.1マイクロメートル以上のサイズの金属粒子および無電解析出溶液を含む混合物を準備して、金属マトリクスを無電解析出させると共に前記金属粒子を共析出させることによって、もしくは、0.1マイクロメートル以上のサイズの金属粒子および電気化学めっき溶液を含む混合物を準備して、金属マトリクスを電気化学めっきすると共に前記金属粒子を共析出させることによって、前記基板上または前記基板内に導電体を形成する工程と、
を備える、方法。 - 請求項1に記載の方法であって、前記金属粒子および前記金属マトリクスは、実質的に同じ組成を有する、方法。
- 請求項1に記載の方法であって、前記金属粒子および前記金属マトリクスは、異なる組成を有する、方法。
- 請求項1に記載の方法であって、前記金属マトリクスは銅を含み、前記金属粒子は銅を含む、方法。
- 請求項1に記載の方法であって、前記金属マトリクスは、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛の内の少なくとも1つの元素を含む、方法。
- 請求項1に記載の方法であって、前記金属粒子は、周期表における実質的な純金属元素の粒子である、方法。
- 請求項1に記載の方法であって、前記金属粒子は、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛からなる群より選択された少なくとも1つの元素を含む、方法。
- 請求項1に記載の方法であって、前記金属粒子は30マイクロメートル未満の最大サイズを有する、方法。
- 請求項1に記載の方法であって、前記金属粒子は10マイクロメートルまでの最大サイズを有する、方法。
- 請求項1に記載の方法であって、前記金属粒子は、コバルト、銅、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛からなる群より選択された少なくとも1つの元素を含み、前記粒子は30マイクロメートル未満の最大サイズを有する、方法。
- 請求項1に記載の方法であって、前記金属マトリクスの結晶構造および/または結晶粒サイズは、前記金属粒子の結晶構造および/または結晶粒サイズと実質的に同じである、方法。
- 請求項1に記載の方法であって、前記金属マトリクスの結晶構造および/または結晶粒サイズは、前記金属粒子の結晶構造および/または結晶粒サイズと異なる、方法。
- 請求項1に記載の方法であって、
基板を準備する工程は、1または複数のビアを有する基板を準備する工程を含み、
前記基板上または前記基板内に導電体を形成する工程は、
金属粒子および無電解析出溶液を含む混合物を前記1または複数のビアに充填して、前記1または複数のビア内に金属マトリクスを無電解析出させると共に前記金属粒子を共析出させる工程、もしくは、
金属粒子および電気化学めっき溶液を含む混合物を前記1または複数のビアに充填して、前記1または複数のビア内に金属マトリクスを電気化学めっきすると共に前記金属粒子を共析出させる工程を含む、方法。 - 請求項13に記載の方法であって、前記ビアへの充填は、様々なサイズかつ30マイクロメートル未満の最大サイズを有する粒子を用いて実現される、方法。
- 請求項13に記載の方法であって、前記ビアへの充填は、10マイクロメートルまでの最大サイズを有する金属粒子を用いる、方法。
- 半導体デバイスを製造する方法であって、
基板を準備する工程と、
0.1マイクロメートルから30マイクロメートル未満のサイズの金属粒子および無電解析出溶液を含む混合物を準備して、金属マトリクスを無電解析出させると共に前記金属粒子を共析出させることによって、前記基板上または前記基板内に導電体を形成する工程と、
を備える、方法。 - 請求項16に記載の方法であって、前記金属マトリクスは、銅と、コバルト、金、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、銀、錫、タングステン、および、亜鉛の内の少なくとも1つの元素を含む前記金属粒子と、を含む、方法。
- 請求項16に記載の方法であって、前記金属マトリクスは、コバルト、コバルト合金、コバルト−タングステン合金、コバルト−タングステン−リン合金またはニッケル合金と、銅を含む前記金属粒子と、を含む、方法。
- 請求項16に記載の方法であって、前記無電解析出溶液は、銅を含むマトリクスおよび銅粒子を含む前記混合物を堆積させるための組成を有し、銅を含む前記マトリクスの前記組成と前記銅粒子の組成とは異なる、方法。
- 請求項16に記載の方法であって、前記金属粒子は様々な粒子サイズを有する、方法。
- 請求項16に記載の方法であって、前記基板を準備する工程は、直径5〜30マイクロメートルで深さ70〜300マイクロメートルの1以上のビアを有する基板を準備し、前記基板上または前記基板内に導電体を形成する工程は、
金属粒子および無電解析出溶液を含む混合物を前記1以上のビアに充填して、前記1または複数のビア内に金属マトリクスを無電解析出させると共に前記金属粒子を共析出させる工程、もしくは、
金属粒子および電気化学めっき溶液を含む混合物を前記1以上のビアに充填して、前記1または複数のビア内に金属マトリクスを電気化学めっきすると共に前記金属粒子を共析出させる工程を含む、方法。 - 基板上または基板内に銅構造を形成するための混合物であって、
0.1マイクロメートル以上のサイズの銅含有粒子と、銅含有マトリクスの無電解析出のための銅イオンを含む無電解析出溶液と、を含むか、
もしくは、
0.1マイクロメートル以上のサイズの銅含有粒子と、銅含有マトリクスの電気化学めっきのための銅イオンを含む電気化学めっき溶液と、を含む、混合物。 - 請求項22に記載の混合物であって、前記粒子は30マイクロメートル未満の最大サイズを有する、混合物。
- 請求項22に記載の混合物であって、前記粒子は10マイクロメートルまでの最大サイズを有する、混合物。
- 請求項22に記載の混合物であって、前記無電解析出溶液または前記電気化学めっき溶液は、1または複数の金属塩、1または複数の還元剤、1または複数の錯化剤、1または複数のpH調整剤、1または複数の緩衝剤、1または複数の界面活性剤、および、1または複数の添加剤の少なくとも1つを含む、混合物。
- 電子デバイスであって、
1または複数の基板貫通ビアを有する基板と、
前記1または複数の基板貫通ビアの壁上のバリア層と、
金属を含有するマトリクスと、を備え、
前記マトリクスに埋め込まれている0.1マイクロメートル以上のサイズの金属粒子と、前記金属粒子と前記マトリクスは実質的に同一の組成を有し、
前記金属粒子および前記マトリクスは、前記1または複数のビアを実質的に満たす、電子デバイス。 - 請求項26に記載の電子デバイスであって、前記マトリクスは銅を含み、前記金属粒子は銅を含む、電子デバイス。
- 請求項26に記載の電子デバイスであって、前記マトリクスは、コバルト、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、錫、および、亜鉛の内の少なくとも1つの元素を含む、電子デバイス。
- 請求項26に記載の電子デバイスであって、前記金属粒子は、コバルト、イリジウム、鉄、モリブデン、ニッケル、オスミウム、パラジウム、プラチナ、レニウム、ロジウム、ルテニウム、錫、および、亜鉛からなる群より選択された少なくとも1つの元素を含む、電子デバイス。
- 請求項26に記載の電子デバイスであって、前記マトリクスおよび前記マトリクスに埋め込まれている前記金属粒子は、前記1または複数のビア内に無電解析出または電気化学めっきにより形成されている、電子デバイス。
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