JP5900370B2 - 塗布膜形成方法、塗布膜形成装置及び記憶媒体 - Google Patents
塗布膜形成方法、塗布膜形成装置及び記憶媒体 Download PDFInfo
- Publication number
- JP5900370B2 JP5900370B2 JP2013021416A JP2013021416A JP5900370B2 JP 5900370 B2 JP5900370 B2 JP 5900370B2 JP 2013021416 A JP2013021416 A JP 2013021416A JP 2013021416 A JP2013021416 A JP 2013021416A JP 5900370 B2 JP5900370 B2 JP 5900370B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- coating film
- coating
- wafer
- mist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims description 122
- 239000011248 coating agent Substances 0.000 title claims description 120
- 238000000034 method Methods 0.000 title claims description 43
- 238000003860 storage Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 110
- 239000007788 liquid Substances 0.000 claims description 76
- 239000003595 mist Substances 0.000 claims description 76
- 238000001816 cooling Methods 0.000 claims description 25
- 230000007246 mechanism Effects 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000004528 spin coating Methods 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 9
- 230000007480 spreading Effects 0.000 claims description 7
- 238000003892 spreading Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 5
- 238000004590 computer program Methods 0.000 claims description 4
- 239000010419 fine particle Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 155
- 239000000243 solution Substances 0.000 description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 37
- 238000012545 processing Methods 0.000 description 20
- 238000005192 partition Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000009834 vaporization Methods 0.000 description 10
- 230000008016 vaporization Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013021416A JP5900370B2 (ja) | 2013-02-06 | 2013-02-06 | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 |
| TW103103249A TW201436882A (zh) | 2013-02-06 | 2014-01-28 | 塗佈膜形成方法、塗佈膜形成裝置及記憶媒體 |
| PCT/JP2014/052439 WO2014123085A1 (ja) | 2013-02-06 | 2014-02-03 | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013021416A JP5900370B2 (ja) | 2013-02-06 | 2013-02-06 | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014151249A JP2014151249A (ja) | 2014-08-25 |
| JP2014151249A5 JP2014151249A5 (enExample) | 2015-03-19 |
| JP5900370B2 true JP5900370B2 (ja) | 2016-04-06 |
Family
ID=51299680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013021416A Active JP5900370B2 (ja) | 2013-02-06 | 2013-02-06 | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5900370B2 (enExample) |
| TW (1) | TW201436882A (enExample) |
| WO (1) | WO2014123085A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5886935B1 (ja) * | 2014-12-11 | 2016-03-16 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
| DE102015100579A1 (de) * | 2015-01-15 | 2016-07-21 | Ev Group E. Thallner Gmbh | Verfahren und Vorrichtung zum Beschichten von Substraten |
| JP6212066B2 (ja) * | 2015-03-03 | 2017-10-11 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
| JP6059793B2 (ja) * | 2015-12-11 | 2017-01-11 | 東京エレクトロン株式会社 | 塗布処理方法、コンピュータ記憶媒体及び塗布処理装置 |
| JP6728009B2 (ja) * | 2016-09-26 | 2020-07-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| CN108855776B (zh) * | 2017-05-08 | 2020-08-14 | 致伸科技股份有限公司 | 离心注胶系统及其方法 |
| CN110560327A (zh) * | 2018-06-05 | 2019-12-13 | 深圳市旭控科技有限公司 | 一种硅片涂源装置 |
| JP7202968B2 (ja) * | 2019-05-09 | 2023-01-12 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
| JP7344726B2 (ja) * | 2019-09-13 | 2023-09-14 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
| CN112415854A (zh) * | 2020-11-23 | 2021-02-26 | 华虹半导体(无锡)有限公司 | 改善晶圆光刻胶涂布效果的方法 |
| CN114653503A (zh) * | 2020-12-23 | 2022-06-24 | 盛美半导体设备(上海)股份有限公司 | 涂胶机及其工艺腔 |
| JP2024060970A (ja) | 2022-10-20 | 2024-05-07 | 東京エレクトロン株式会社 | カップ、液処理装置及び液処理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01204421A (ja) * | 1988-02-10 | 1989-08-17 | Hitachi Ltd | ホトレジスト塗布方法 |
| JPH0462831A (ja) * | 1990-06-25 | 1992-02-27 | Toshiba Corp | ホトレジスト塗布方法 |
| JP2591360B2 (ja) * | 1991-05-08 | 1997-03-19 | 株式会社日立製作所 | フォトレジストの塗布方法 |
| JPH0945611A (ja) * | 1995-07-27 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | 回転式基板塗布装置 |
| JP3453073B2 (ja) * | 1998-10-14 | 2003-10-06 | 東京エレクトロン株式会社 | 塗布処理装置 |
| US6322626B1 (en) * | 1999-06-08 | 2001-11-27 | Micron Technology, Inc. | Apparatus for controlling a temperature of a microelectronics substrate |
| JP3990998B2 (ja) * | 2003-03-14 | 2007-10-17 | 東京エレクトロン株式会社 | 塗布装置及び塗布方法 |
| JP4597847B2 (ja) * | 2005-11-28 | 2010-12-15 | 株式会社フジクラ | 成膜装置 |
| JP2009220046A (ja) * | 2008-03-17 | 2009-10-01 | Seiko Epson Corp | 塗布装置 |
| JP5511451B2 (ja) * | 2010-03-16 | 2014-06-04 | 中央発條株式会社 | 自動車用スタビライザの製造方法 |
-
2013
- 2013-02-06 JP JP2013021416A patent/JP5900370B2/ja active Active
-
2014
- 2014-01-28 TW TW103103249A patent/TW201436882A/zh unknown
- 2014-02-03 WO PCT/JP2014/052439 patent/WO2014123085A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014151249A (ja) | 2014-08-25 |
| WO2014123085A1 (ja) | 2014-08-14 |
| TW201436882A (zh) | 2014-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5900370B2 (ja) | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 | |
| US8375887B2 (en) | Solution treatment apparatus, solution treatment method and resist coating method | |
| JP3587723B2 (ja) | 基板処理装置および基板処理方法 | |
| KR102410089B1 (ko) | 액 처리 장치 및 액 처리 방법 | |
| US9613836B2 (en) | Coating film forming apparatus, coating film forming method, and recording medium | |
| TWI759526B (zh) | 基板處理裝置、基板處理方法及記憶媒體 | |
| TW201714212A (zh) | 基板處理裝置,基板處理方法及記錄媒體 | |
| CN101331588A (zh) | 涂敷设备和涂敷方法 | |
| US20150020852A1 (en) | Substrate processing apparatus and substrate processing method | |
| JP2014151249A5 (enExample) | ||
| JP2009277870A (ja) | 塗布装置、塗布方法、塗布、現像装置及び記憶媒体 | |
| CN107051831A (zh) | 涂敷膜形成方法和涂敷膜形成装置 | |
| JP2009277795A (ja) | 塗布装置、塗布方法及び記憶媒体 | |
| JP3315608B2 (ja) | 塗布液塗布方法 | |
| JP5327238B2 (ja) | 塗布処理装置、塗布処理方法及び記憶媒体 | |
| JP2015211207A (ja) | 基板液処理装置及び基板液処理方法 | |
| JP5807622B2 (ja) | 塗布膜形成方法、塗布膜形成装置、基板処理装置及び記憶媒体 | |
| JP2017094324A (ja) | 塗布膜形成方法、塗布膜形成装置及び記憶媒体 | |
| JP6432644B2 (ja) | 塗布膜形成装置、塗布膜形成方法、記憶媒体 | |
| JP6297452B2 (ja) | 基板処理装置、基板処理方法、及び記憶媒体 | |
| CN115298801A (zh) | 清洗用治具、涂布装置以及清洗方法 | |
| CN112786484A (zh) | 基片处理方法和基片处理装置 | |
| JP6690717B2 (ja) | 塗布方法、塗布装置及び記憶媒体 | |
| JP6160554B2 (ja) | 塗布膜形成装置、塗布膜形成方法、記憶媒体 | |
| JP2005217282A (ja) | 塗布膜形成方法及び塗布膜形成装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150130 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150130 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150901 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151014 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160209 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160222 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5900370 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |