JP5896919B2 - BiCMOSプロセス技術における高電圧SCRMOS - Google Patents
BiCMOSプロセス技術における高電圧SCRMOS Download PDFInfo
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- JP5896919B2 JP5896919B2 JP2012551155A JP2012551155A JP5896919B2 JP 5896919 B2 JP5896919 B2 JP 5896919B2 JP 2012551155 A JP2012551155 A JP 2012551155A JP 2012551155 A JP2012551155 A JP 2012551155A JP 5896919 B2 JP5896919 B2 JP 5896919B2
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- 238000000034 method Methods 0.000 title claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 91
- 210000000746 body region Anatomy 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- -1 silicon carbide nitride Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/1012—Base regions of thyristors
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- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
本発明の代表的な側面の例示の実施例を添付の図面を参照して説明する。
Claims (14)
- 集積回路であって、
第1の導電型を有する半導体基板と、
前記基板上に形成されるSCRMOSトランジスタと、
を含み、
前記SCRMOSトランジスタが、
前記基板内に形成されるディープウェルであって、前記第1の導電型とは反対の第2の導電型を有し、ドリフト領域を含む、前記ディープウェルと、
前記ディープウェル内に前記ドリフト領域に横方向に隣接するように形成される低減された表面フィールド(RESURF)領域であって、前記RESURF領域が前記第2の導電型を有し、前記RESURF領域のドーピング濃度が前記ドリフト領域のドーピング濃度の少なくとも2倍である、前記RESURF領域と、
前記RESURF領域の反対側で前記ドリフト領域に横方向に隣接するように前記ディープウェル内に形成される本体領域であって、前記第1の導電型を有する、前記本体領域と、
前記本体領域の一部に重なるように前記基板の上に形成されるMOSゲートと、
前記RESURF領域内に形成されるドレイン構造であって、
前記第2の導電型を有するドレイン拡散領域であって、前記ドレイン拡散領域のドーピング濃度が前記RESURF領域のドーピング濃度より少なくとも3倍大きい、前記ドレイン拡散領域と、
前記第1の導電型を有するSCR端子と、
を有する、前記ドレイン構造と、
前記本体領域内に形成されるソース構造であって、
前記MOSゲートに近傍の前記第2の導電型を有するソース拡散領域と、
前記第1の導電型を有する本体コンタクト拡散領域と、
を有する、前記ソース構造と、
を含む、集積回路。 - 請求項1に記載の集積回路であって、
前記SCRMOSトランジスタが、
前記ディープウェル内にRESURF領域と接しないように形成される第2のドレイン構造であって、前記第2の導電型を有する第2のドレイン拡散領域を有する、前記第2のドレイン構造と、
前記第1の導電型を有するSCR端子と、
を更に含む、集積回路。 - 請求項2に記載の集積回路であって、
前記SCRMOSトランジスタが、
前記ディープウェル内の第2のドリフト領域と、
前記第2のドリフト領域に横方向に隣接するように前記ディープウェル内に形成される第2のRESURF領域であって、前記第2のRESURF領域が前記第2の導電型を有し、前記第2のRESURF領域のドーピング濃度が前記ドリフト領域のドーピング濃度の少なくとも2倍である、前記第2のRESURF領域と、
前記第2のRESURF領域内に形成される第3のドレイン構造と、
を更に有し、
前記第3のドレイン構造が、
前記第2の導電型を有する第3のドレイン拡散領域であって、前記第3のドレイン拡散領域のドーピング濃度が前記第2のRESURF領域のドーピング濃度より少なくとも3倍大きい、前記第3のドレイン拡散領域と、
前記第1の導電型を有する第3のSCR端子と、
を有する、集積回路。 - 請求項1に記載の集積回路であって、
前記SCRMOSトランジスタが、
前記ディープウェル内に形成される前記第2の導電型の複数のRESURF領域であって、各RESURF領域が少なくとも1つのドリフト領域に横方向に隣接し、各RESURF領域のドーピング濃度が前記横方向に隣接するドリフト領域のドーピング濃度の少なくとも2倍である、前記複数のRESURF領域と、
前記RESURF領域内に形成される複数のドレイン構造と、
を更に含み、
前記ドレイン構造の各々が、
前記第2の導電型を有するドレイン拡散領域であって、当該ドレイン拡散領域のドーピング濃度が前記ドレイン拡散領域を含む前記RESURF領域のドーピング濃度より少なくとも3倍大きい、前記ドレイン拡散領域と、
前記第1の導電型を有するSCR端子と、
を有し、
前記SCRMOSトランジスタ内の全てのドレイン構造がRESURF領域によって囲まれる、集積回路。 - 請求項4に記載の集積回路であって、
前記第1の導電型がP型の導電性であり、前記第2の導電型がN型の導電性である、集積回路。 - 請求項4に記載の集積回路であって、
前記第1の導電型N型の導電性であり、前記第2の導電型P型の導電性である、集積回路。 - SCRMOSトランジスタを含む集積回路であって、
第1の導電型を有し、ドリフト領域を含む、ディープウェルと、
前記ディープウェル内に前記ドリフト領域に横方向に隣接するように形成される低減された表面フィールド(RESURF)領域であって、前記RESURF領域が前記第1の導電型を有し、前記RESURF領域のドーピング濃度が前記ドリフト領域のドーピング濃度の少なくとも2倍である、前記RESURF領域と、
前記ディープウェル内に前記RESURF領域とは反対の前記ドリフト領域に横方向に隣接するように形成される本体領域であって、前記第1の導電型とは反対の第2の導電型を有する、前記本体領域と、
前記本体領域の一部に重なるMOSゲートと、
前記RESURF領域内に形成されるドレイン構造であって、前記ドレイン構造が、
前記第1の導電型を有するドレイン拡散領域であって、前記ドレイン拡散領域のドーピング濃度が前記RESURF領域のドーピング濃度の少なくともより3倍大きい、前記ドレイン拡散領域と、
前記第2の導電型を有するSCR端子と、
を有する、前記ドレイン構造と、
前記本体領域内に形成されるソース構造であって、前記ソース構造が、
前記MOSゲート近傍の前記第1の導電型を有するソース拡散領域と、
前記第2の導電型を有する本体コンタクト拡散領域と、
を有する、前記ソース構造と、
を含む、集積回路。 - 請求項7に記載の集積回路であって、
前記SCRMOSトランジスタが、
前記ディープウェル内にRESURF領域と接しないように形成される第2のドレイン構造であって、前記第1の導電型を有する第2のドレイン拡散領域を有する、前記第2のドレイン構造と、
前記第2の導電型を有するSCR端子と、
を更に含む、集積回路。 - 請求項8に記載の集積回路であって、
前記SCRMOSトランジスタが、
前記ディープウェル内の第2のドリフト領域と、
前記ディープウェル内に前記第2のドリフト領域に横方向に隣接するように形成される第2のRESURF領域であって、前記第2のRESURF領域が前記第1の導電型を有し、前記第2のRESURF領域のドーピング濃度が前記第2のドリフト領域のドーピング濃度の少なくとも2倍である、前記第2のRESURF領域と、
前記第2のRESURF領域内に形成される第3のドレイン構造と、
を更に含み、
前記第3のドレイン拡散領域が、
前記第1の導電型を有する第3のドレイン拡散領域であって、前記第3のドレイン拡散領域のドーピング濃度が前記第2のRESURF領域のドーピング濃度より少なくとも3倍大きい、前記第3のドレイン拡散領域と、
前記第2の導電型を有する第3のSCR端子と、
を有する、集積回路。 - 集積回路を形成する方法であって、
第1の導電型を有する半導体基板を提供する工程と、
前記基板上にSCRMOSトランジスタを形成する工程と、
を含み、
前記SCRMOSトランジスタを形成する工程が、
前記基板内にディープウェルを形成することであって、前記ディープウェルが前記第1の導電型とは反対の第2の導電型を有し、前記ディープウェルがドリフト領域を有する、前記ディープウェルを形成することと、
前記ディープウェル内に前記ドリフト領域に横方向に隣接するように低減された表面フィールド(RESURF)領域を形成することであって、前記RESURF領域が前記第2の導電型を有し、前記RESURF領域のドーピング濃度が前記ドリフト領域のドーピング濃度の少なくとも2倍である、前記RESURF領域を形成することと、
前記ディープウェル内に本体領域を形成することであって、前記本体領域が前記RESURF領域とは反対の前記ドリフト領域横方向に隣接し、前記本体領域が前記第1の導電型を有する、前記本体領域を形成することと、
MOSゲートを前記本体領域の一部に重なるように前記基板の上に形成することと、
前記RESURF領域内に形成されるドレイン構造を形成することであって、前記ドレイン構造を形成することが、
前記第2の導電型を有するドレイン拡散領域を形成することであって、前記ドレイン拡散領域のドーピング濃度が前記RESURF領域のドーピング濃度より少なくとも3倍大きい、前記ドレイン拡散領域を形成することと、
前記第1の導電型を有するSCR端子を形成することと、
を含む、前記ドレイン構造を形成することと、
前記本体領域内にソース構造を形成することであって、前記ソース構造を形成することが、
前記MOSゲートの近傍に前記第2の導電型を有するソース拡散領域を形成することと、
前記第1の導電型を有する本体コンタクト拡散領域を形成することと、
を含む、前記ソース構造を形成することと、
を含むプロセスによりSCRMOSトランジスタを形成する、方法。 - 請求項10に記載の方法であって、
前記SCRMOSトランジスタを形成することが、
前記ディープウェル内に第2のドレイン構造を形成することであって、前記第2のドレイン構造がRESURF領域に接触しない、前記第2のドレイン構造を形成すること、
を更に含み、
前記第2のドレイン構造を形成することが、
前記第2の導電型を有する第2のドレイン拡散領域を形成することと、
前記第1の導電型を有するSCR端子を形成することと、
を含む、方法。 - 請求項11に記載の方法であって、
前記SCRMOSトランジスタを形成することが、
前記ディープウェル内に第2のドリフト領域を形成することと、
前記ディープウェル内に前記第2のドリフト領域に横方向に隣接するように第2のRESURF領域を形成することであって、前記第2のRESURF領域が前記第2の導電型を有し、前記第2のRESURF領域のドーピング濃度が前記ドリフト領域のドーピング濃度の少なくとも2倍である、前記第2のRESURF領域を形成することと、
前記第2のRESURF領域内に第3のドレイン構造を形成することと、
を更に含み、
前記第3のドレイン構造を形成することが、
前記第2の導電型を有する第3のドレイン拡散領域を形成することであって、前記第3のドレイン拡散領域のドーピング濃度が前記第2のRESURF領域のドーピング濃度より少なくとも3倍大きい、前記第3のドレイン拡散領域を形成することと、
前記第1の導電型を有する第3のSCR端子を形成することと、
を含む、方法。 - 請求項12に記載の方法であって、
前記第1の導電型がP型の導電性であり、前記第2の導電型がN型の導電性である、方法。 - 請求項12に記載の方法であって、
前記第1の導電型がN型の導電性であり、前記第2の導電型がP型の導電性である、方法。
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