FR3091021B1 - Thyristor vertical - Google Patents
Thyristor vertical Download PDFInfo
- Publication number
- FR3091021B1 FR3091021B1 FR1873566A FR1873566A FR3091021B1 FR 3091021 B1 FR3091021 B1 FR 3091021B1 FR 1873566 A FR1873566 A FR 1873566A FR 1873566 A FR1873566 A FR 1873566A FR 3091021 B1 FR3091021 B1 FR 3091021B1
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- FR
- France
- Prior art keywords
- thyristor
- region
- vertical
- vertical thyristor
- trigger
- Prior art date
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- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Thyristor vertical La présente description concerne un thyristor (200) comprenant un empilement vertical de première (101), deuxième (103), troisième (105) et quatrième (107) régions semiconductrices de types de conductivité alternés, dans lequel la quatrième région (107) est interrompue dans une zone de gâchette (115) du thyristor, et dans un couloir continu (201) s'étendant depuis ladite zone de gâchette en direction d'un bord latéral de la quatrième région. Figure pour l'abrégé : Fig. 4
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1873566A FR3091021B1 (fr) | 2018-12-20 | 2018-12-20 | Thyristor vertical |
US16/706,201 US11362204B2 (en) | 2018-12-20 | 2019-12-06 | Vertical thyristor |
CN201911319805.1A CN111354781B (zh) | 2018-12-20 | 2019-12-19 | 垂直晶闸管 |
CN201922298435.XU CN211929493U (zh) | 2018-12-20 | 2019-12-19 | 晶闸管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1873566A FR3091021B1 (fr) | 2018-12-20 | 2018-12-20 | Thyristor vertical |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3091021A1 FR3091021A1 (fr) | 2020-06-26 |
FR3091021B1 true FR3091021B1 (fr) | 2021-01-08 |
Family
ID=66286519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1873566A Active FR3091021B1 (fr) | 2018-12-20 | 2018-12-20 | Thyristor vertical |
Country Status (3)
Country | Link |
---|---|
US (1) | US11362204B2 (fr) |
CN (2) | CN211929493U (fr) |
FR (1) | FR3091021B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3091021B1 (fr) * | 2018-12-20 | 2021-01-08 | St Microelectronics Tours Sas | Thyristor vertical |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2254880B1 (fr) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
US4180416A (en) * | 1978-09-27 | 1979-12-25 | International Business Machines Corporation | Thermal migration-porous silicon technique for forming deep dielectric isolation |
FR2516704B1 (fr) * | 1981-11-13 | 1985-09-06 | Thomson Csf | Thyristor a faible courant de gachette immunise par rapport aux declenchements |
FR2697674B1 (fr) * | 1992-10-29 | 1995-01-13 | Sgs Thomson Microelectronics | Thyristor et assemblage de thyristors à cathode commune. |
JP3850054B2 (ja) * | 1995-07-19 | 2006-11-29 | 三菱電機株式会社 | 半導体装置 |
US6693310B1 (en) * | 1995-07-19 | 2004-02-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
FR2818806B1 (fr) * | 2000-12-21 | 2003-03-21 | St Microelectronics Sa | Commutateur electronique bidirectionnel bistable a commande par implusions |
JP4618629B2 (ja) * | 2004-04-21 | 2011-01-26 | 三菱電機株式会社 | 誘電体分離型半導体装置 |
EP1746661A1 (fr) * | 2005-07-22 | 2007-01-24 | ABB Technology AG | Dispositif semi-conducteur de puissance |
DE102006001252B4 (de) * | 2006-01-10 | 2012-01-26 | Infineon Technologies Ag | Bipolares Leistungshalbleiterbauelement mit einem p-Emitter und höher dotierten Zonen in dem p-Emitter und Herstellungsverfahren |
US7531888B2 (en) * | 2006-11-30 | 2009-05-12 | Fairchild Semiconductor Corporation | Integrated latch-up free insulated gate bipolar transistor |
US7956418B2 (en) * | 2007-05-29 | 2011-06-07 | Mediatek Inc. | ESD protection devices |
US8815654B2 (en) * | 2007-06-14 | 2014-08-26 | International Business Machines Corporation | Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices |
DE102007057728B4 (de) * | 2007-11-30 | 2014-04-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur |
US10566462B2 (en) * | 2009-07-30 | 2020-02-18 | Infineon Technologies Austria Ag | Bipolar semiconductor device and manufacturing method |
US8120074B2 (en) * | 2009-10-29 | 2012-02-21 | Infineon Technologies Austria Ag | Bipolar semiconductor device and manufacturing method |
US8120108B2 (en) * | 2010-01-27 | 2012-02-21 | Texas Instruments Incorporated | High voltage SCRMOS in BiCMOS process technologies |
FR2974447A1 (fr) * | 2011-04-22 | 2012-10-26 | St Microelectronics Tours Sas | Structure d'amorcage et composant de protection comprenant une telle structure d'amorcage |
US8569117B2 (en) * | 2011-10-10 | 2013-10-29 | Pakal Technologies Llc | Systems and methods integrating trench-gated thyristor with trench-gated rectifier |
JP6053415B2 (ja) * | 2012-09-19 | 2016-12-27 | 三菱電機株式会社 | 半導体装置 |
US8835975B1 (en) * | 2013-05-10 | 2014-09-16 | Ixys Corporation | Ultra-fast breakover diode |
FR3011124A1 (fr) * | 2013-09-26 | 2015-03-27 | St Microelectronics Tours Sas | Composant scr a caracteristiques stables en temperature |
US9523815B2 (en) * | 2014-03-31 | 2016-12-20 | Stmicroelectronics Sa | ESD protection thyristor adapted to electro-optical devices |
US20150333068A1 (en) * | 2014-05-14 | 2015-11-19 | Globalfoundries Singapore Pte. Ltd. | Thyristor random access memory |
US9318587B2 (en) * | 2014-05-30 | 2016-04-19 | Alpha And Omega Semiconductor Incorporated | Injection control in semiconductor power devices |
EP3195363B1 (fr) * | 2014-09-15 | 2018-04-18 | ABB Schweiz AG | Procédé de fabrication d'un dispositif à semi-conducteurs comprenant une plaquette mince à semi-conducteurs |
EP3304600B1 (fr) * | 2015-05-29 | 2018-10-17 | ABB Schweiz AG | Thyristor à étalement de plasma amélioré |
FR3049768B1 (fr) * | 2016-03-31 | 2018-07-27 | Stmicroelectronics (Tours) Sas | Composant de puissance protege contre les surchauffes |
US9741839B1 (en) * | 2016-06-21 | 2017-08-22 | Powerex, Inc. | Gate structure of thyristor |
FR3091021B1 (fr) * | 2018-12-20 | 2021-01-08 | St Microelectronics Tours Sas | Thyristor vertical |
-
2018
- 2018-12-20 FR FR1873566A patent/FR3091021B1/fr active Active
-
2019
- 2019-12-06 US US16/706,201 patent/US11362204B2/en active Active
- 2019-12-19 CN CN201922298435.XU patent/CN211929493U/zh active Active
- 2019-12-19 CN CN201911319805.1A patent/CN111354781B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN111354781A (zh) | 2020-06-30 |
US11362204B2 (en) | 2022-06-14 |
US20200203516A1 (en) | 2020-06-25 |
FR3091021A1 (fr) | 2020-06-26 |
CN111354781B (zh) | 2024-06-21 |
CN211929493U (zh) | 2020-11-13 |
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