JP5895712B2 - 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 - Google Patents

原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 Download PDF

Info

Publication number
JP5895712B2
JP5895712B2 JP2012124713A JP2012124713A JP5895712B2 JP 5895712 B2 JP5895712 B2 JP 5895712B2 JP 2012124713 A JP2012124713 A JP 2012124713A JP 2012124713 A JP2012124713 A JP 2012124713A JP 5895712 B2 JP5895712 B2 JP 5895712B2
Authority
JP
Japan
Prior art keywords
gas
raw material
flow rate
temperature
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012124713A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013249511A5 (enExample
JP2013249511A (ja
Inventor
有 和村
有 和村
裕巳 島
裕巳 島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012124713A priority Critical patent/JP5895712B2/ja
Publication of JP2013249511A publication Critical patent/JP2013249511A/ja
Publication of JP2013249511A5 publication Critical patent/JP2013249511A5/ja
Application granted granted Critical
Publication of JP5895712B2 publication Critical patent/JP5895712B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012124713A 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体 Expired - Fee Related JP5895712B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012124713A JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012124713A JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013249511A JP2013249511A (ja) 2013-12-12
JP2013249511A5 JP2013249511A5 (enExample) 2014-11-13
JP5895712B2 true JP5895712B2 (ja) 2016-03-30

Family

ID=49848497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012124713A Expired - Fee Related JP5895712B2 (ja) 2012-05-31 2012-05-31 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体

Country Status (1)

Country Link
JP (1) JP5895712B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016040402A (ja) * 2014-08-12 2016-03-24 東京エレクトロン株式会社 原料ガス供給装置
US10100407B2 (en) 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
JP6693106B2 (ja) * 2015-03-27 2020-05-13 東京エレクトロン株式会社 原料供給装置、原料供給方法及び記憶媒体
KR101899201B1 (ko) * 2015-03-27 2018-09-14 도쿄엘렉트론가부시키가이샤 원료 공급 장치, 원료 공급 방법 및 기억 매체
JP6627474B2 (ja) * 2015-09-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
JP6417052B2 (ja) * 2015-09-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP6565645B2 (ja) * 2015-12-02 2019-08-28 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
GB201523156D0 (en) * 2015-12-31 2016-02-17 Pilkington Group Ltd High strength glass containers
JP6698153B2 (ja) * 2016-04-26 2020-05-27 日本エア・リキード合同会社 前駆体の供給システムおよび前駆体の供給方法
JP6787215B2 (ja) * 2017-03-27 2020-11-18 株式会社豊田中央研究所 成膜装置と半導体装置の製造方法
JP7281285B2 (ja) * 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム
JP7226222B2 (ja) * 2019-09-24 2023-02-21 東京エレクトロン株式会社 ガス供給装置及びガス供給方法
JP7516742B2 (ja) * 2019-11-05 2024-07-17 東京エレクトロン株式会社 基板を処理する装置、処理ガスを濃縮する装置、及び基板を処理する方法
US11513108B2 (en) 2020-01-14 2022-11-29 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with concentration measurement
KR20220122917A (ko) * 2021-02-26 2022-09-05 (주)지오엘리먼트 넓은 가용 온도 범위를 가지는 고순도 전구체 기화 시스템
KR20220122434A (ko) * 2021-02-26 2022-09-02 (주)지오엘리먼트 고순도 전구체를 위한 기화 시스템
CN115572956B (zh) * 2022-10-14 2024-09-17 华虹半导体(无锡)有限公司 调控晶圆原子层化学沉积薄膜厚度均匀性的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279678A (ja) * 1985-06-05 1986-12-10 Nippon Tairan Kk 流量制御装置
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
JPH0718449A (ja) * 1993-07-02 1995-01-20 Hitachi Ltd 高温気体定流量発生装置およびプロセス装置
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5648113A (en) * 1994-09-30 1997-07-15 International Business Machines Corporation Aluminum oxide LPCVD system
JP2866374B1 (ja) * 1998-01-27 1999-03-08 三菱マテリアルポリシリコン株式会社 エピタキシャル成長用ガスの供給方法及びその装置
JP4213331B2 (ja) * 1999-06-22 2009-01-21 東京エレクトロン株式会社 有機金属気相成長方法及び有機金属気相成長装置
JP3905678B2 (ja) * 2000-02-28 2007-04-18 株式会社堀場製作所 薄膜堆積方法とその装置および薄膜堆積方法に用いるｆｔｉｒガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置
JP2002356779A (ja) * 2001-05-29 2002-12-13 Murata Mfg Co Ltd 誘電体薄膜の製造装置及び誘電体薄膜の成膜方法
JP2006324532A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 薄膜堆積方法および薄膜堆積装置

Also Published As

Publication number Publication date
JP2013249511A (ja) 2013-12-12

Similar Documents

Publication Publication Date Title
JP5895712B2 (ja) 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体
JP5949586B2 (ja) 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体
US10612143B2 (en) Raw material gas supply apparatus and film forming apparatus
KR101754479B1 (ko) 원료 가스 공급 장치
CN107043927B (zh) 原料气体供给装置和原料气体供给方法
JP6678489B2 (ja) 基板処理装置
KR102109287B1 (ko) 기판 처리 방법, 기억 매체 및 원료 가스 공급 장치
US8927066B2 (en) Method and apparatus for gas delivery
JP6565645B2 (ja) 原料ガス供給装置、原料ガス供給方法及び記憶媒体
US10113235B2 (en) Source gas supply unit, film forming apparatus and source gas supply method
JP2014007289A (ja) ガス供給装置及び成膜装置
Mousa et al. Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure
US20130095668A1 (en) Semiconductor device manufacturing method and substrate processing apparatus
JP7298979B2 (ja) 薄膜製造のための化学物質源の統合された合成、送達及び加工のための方法及びシステム
KR20140097011A (ko) 원료 가스 공급 장치, 성막 장치, 유량의 측정 방법 및 기억 매체
US10256101B2 (en) Raw material gas supply apparatus, raw material gas supply method and storage medium
KR20230045590A (ko) 버블러 (bubbler) 를 사용한 농도 제어
JP4418001B2 (ja) 原料供給装置
JP2005307233A (ja) 成膜装置及び成膜方法及びプロセスガスの供給方法
US20230070064A1 (en) Raw material feeding device, substrate processing system, and residual estimation method
JP2006324532A (ja) 薄膜堆積方法および薄膜堆積装置
US11359286B2 (en) Quartz crystal microbalance concentration monitor
JP2017053039A (ja) 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体
JP4213331B2 (ja) 有機金属気相成長方法及び有機金属気相成長装置
JP6693106B2 (ja) 原料供給装置、原料供給方法及び記憶媒体

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141001

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150616

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150810

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160202

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160215

R150 Certificate of patent or registration of utility model

Ref document number: 5895712

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees