JP5887172B2 - 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置 - Google Patents

感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置 Download PDF

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Publication number
JP5887172B2
JP5887172B2 JP2012068197A JP2012068197A JP5887172B2 JP 5887172 B2 JP5887172 B2 JP 5887172B2 JP 2012068197 A JP2012068197 A JP 2012068197A JP 2012068197 A JP2012068197 A JP 2012068197A JP 5887172 B2 JP5887172 B2 JP 5887172B2
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group
general formula
acid
resin composition
atom
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Japanese (ja)
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JP2013050696A (ja
Inventor
恭平 荒山
恭平 荒山
和田 健二
健二 和田
雨宮 拓馬
拓馬 雨宮
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2012068197A priority Critical patent/JP5887172B2/ja
Priority to PCT/JP2012/067852 priority patent/WO2013018524A1/ja
Priority to CN201280037948.3A priority patent/CN103718109B/zh
Priority to KR1020147002626A priority patent/KR101780663B1/ko
Publication of JP2013050696A publication Critical patent/JP2013050696A/ja
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012068197A 2011-07-29 2012-03-23 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置 Active JP5887172B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012068197A JP5887172B2 (ja) 2011-07-29 2012-03-23 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置
PCT/JP2012/067852 WO2013018524A1 (ja) 2011-07-29 2012-07-12 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターン、その製造方法、及び半導体装置
CN201280037948.3A CN103718109B (zh) 2011-07-29 2012-07-12 感光性树脂组合物及膜、图案形成材料、聚酰亚胺膜、凹凸图案及制法、及半导体装置
KR1020147002626A KR101780663B1 (ko) 2011-07-29 2012-07-12 감광성 수지 조성물, 릴리프 패턴 형성 재료, 감광성막, 폴리이미드막, 경화 릴리프 패턴, 그 제조 방법, 및 반도체 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011167622 2011-07-29
JP2011167622 2011-07-29
JP2012068197A JP5887172B2 (ja) 2011-07-29 2012-03-23 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置

Publications (2)

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JP2013050696A JP2013050696A (ja) 2013-03-14
JP5887172B2 true JP5887172B2 (ja) 2016-03-16

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JP2012068197A Active JP5887172B2 (ja) 2011-07-29 2012-03-23 感光性樹脂組成物、レリーフパターン形成材料、感光性膜、ポリイミド膜、硬化レリーフパターンの製造方法、及び半導体装置

Country Status (4)

Country Link
JP (1) JP5887172B2 (ko)
KR (1) KR101780663B1 (ko)
CN (1) CN103718109B (ko)
WO (1) WO2013018524A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6447242B2 (ja) * 2014-05-15 2019-01-09 Jsr株式会社 感放射線性樹脂組成物、絶縁膜及びその製造方法、並びに有機el素子
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
TWI637980B (zh) * 2017-01-11 2018-10-11 長興材料工業股份有限公司 聚醯亞胺前驅物及其應用
KR101949611B1 (ko) * 2017-09-29 2019-05-08 (주)휴넷플러스 화학 증폭형 바인더 수지 및 이를 포함하는 유기 절연막 조성물
US20210364919A1 (en) * 2019-01-23 2021-11-25 Microcosm Technology Co., Ltd. Photosensitive resin composition and application thereof
US11456266B2 (en) * 2019-10-31 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Bump structure and method of manufacturing bump structure
CN117083346A (zh) * 2021-03-30 2023-11-17 富士胶片株式会社 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351582B2 (ja) * 1993-03-12 2002-11-25 株式会社東芝 感放射線性樹脂組成物
JP3667956B2 (ja) * 1996-10-11 2005-07-06 株式会社東芝 透明性樹脂、感光性組成物、およびパターン形成方法
JPH11231531A (ja) * 1998-02-19 1999-08-27 Hitachi Chem Co Ltd 感光性樹脂組成物、パターン製造法及び半導体装置
JP2002356555A (ja) * 2001-05-30 2002-12-13 Kanegafuchi Chem Ind Co Ltd ポリイミド前駆体及びそれを用いた感光性樹脂組成物
TWI287028B (en) * 2002-05-17 2007-09-21 Hitachi Chem Dupont Microsys Photosensitive polymer composition, method of forming relief patterns, and electronic equipment
JP4211440B2 (ja) * 2003-03-14 2009-01-21 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造方法及び電子部品
JP4430670B2 (ja) * 2003-06-05 2010-03-10 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規なポジ型感光性樹脂組成物
CN101218540B (zh) * 2005-07-14 2011-04-13 三井化学株式会社 正型感光性树脂组合物以及图案形成方法
US7615324B2 (en) * 2007-03-14 2009-11-10 Fujifilm Corporation Photosensitive composition, and cured relief pattern production method and semiconductor device using the same
JP2009192760A (ja) * 2008-02-14 2009-08-27 Kyowa Hakko Chemical Co Ltd ポジ型感光性樹脂組成物

Also Published As

Publication number Publication date
WO2013018524A1 (ja) 2013-02-07
CN103718109B (zh) 2017-06-23
KR101780663B1 (ko) 2017-09-21
KR20140047105A (ko) 2014-04-21
JP2013050696A (ja) 2013-03-14
CN103718109A (zh) 2014-04-09

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