JP5883621B2 - インプリントで誘導されるブロック共重合体のパターン化のためのシステムおよび方法 - Google Patents

インプリントで誘導されるブロック共重合体のパターン化のためのシステムおよび方法 Download PDF

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Publication number
JP5883621B2
JP5883621B2 JP2011252733A JP2011252733A JP5883621B2 JP 5883621 B2 JP5883621 B2 JP 5883621B2 JP 2011252733 A JP2011252733 A JP 2011252733A JP 2011252733 A JP2011252733 A JP 2011252733A JP 5883621 B2 JP5883621 B2 JP 5883621B2
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JP
Japan
Prior art keywords
bcp
block
resist
annealed
region
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Expired - Fee Related
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JP2011252733A
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English (en)
Japanese (ja)
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JP2012142065A (ja
JP2012142065A5 (enExample
Inventor
シャオ・シャイガン
ルネ・ヨハネス・マリヌス・ファン・デ・ビールドンク
キム・ヤン・リー
デイビッド・クオ
シャオミン・ヤン
フー・ウェイ
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of JP2012142065A5 publication Critical patent/JP2012142065A5/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
JP2011252733A 2010-11-30 2011-11-18 インプリントで誘導されるブロック共重合体のパターン化のためのシステムおよび方法 Expired - Fee Related JP5883621B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,196 2010-11-30
US12/957,196 US20120135159A1 (en) 2010-11-30 2010-11-30 System and method for imprint-guided block copolymer nano-patterning

Publications (3)

Publication Number Publication Date
JP2012142065A JP2012142065A (ja) 2012-07-26
JP2012142065A5 JP2012142065A5 (enExample) 2014-12-11
JP5883621B2 true JP5883621B2 (ja) 2016-03-15

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Family Applications (1)

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JP2011252733A Expired - Fee Related JP5883621B2 (ja) 2010-11-30 2011-11-18 インプリントで誘導されるブロック共重合体のパターン化のためのシステムおよび方法

Country Status (4)

Country Link
US (1) US20120135159A1 (enExample)
JP (1) JP5883621B2 (enExample)
CN (1) CN102540702B (enExample)
SG (2) SG2014012355A (enExample)

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US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US20120164389A1 (en) 2010-12-28 2012-06-28 Yang Xiaomin Imprint template fabrication and repair based on directed block copolymer assembly
US20120196094A1 (en) * 2011-01-31 2012-08-02 Seagate Technology Llc Hybrid-guided block copolymer assembly
CN102983065B (zh) * 2011-09-06 2015-12-16 中芯国际集成电路制造(北京)有限公司 图案、掩模图案形成方法和半导体器件制造方法
JP5558444B2 (ja) * 2011-09-16 2014-07-23 株式会社東芝 モールドの製造方法
US8900963B2 (en) * 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
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US9368366B2 (en) * 2013-02-14 2016-06-14 Asml Netherlands B.V. Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
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KR101449850B1 (ko) * 2013-05-21 2014-10-13 한국과학기술원 용매 어닐링 방법, 이를 이용한 블록 공중합체 패턴 형성 방법 및 이에 의하여 제조된 블록 공중합체 패턴
JP6167057B2 (ja) * 2013-05-31 2017-07-19 Ｊｘｔｇエネルギー株式会社 凹凸パターン転写用モールドの製造方法及び凹凸構造を有する部材の製造方法
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US11021630B2 (en) 2014-12-30 2021-06-01 Rohm And Haas Electronic Materials Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
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TWI627219B (zh) 2015-02-26 2018-06-21 羅門哈斯電子材料有限公司 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件
TWI669337B (zh) 2015-02-26 2019-08-21 美商羅門哈斯電子材料有限公司 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件
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JP6688464B2 (ja) * 2016-07-13 2020-04-28 株式会社豊田中央研究所 ナノインプリント転写体の製造方法
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Also Published As

Publication number Publication date
SG181236A1 (en) 2012-06-28
CN102540702B (zh) 2017-04-12
JP2012142065A (ja) 2012-07-26
US20120135159A1 (en) 2012-05-31
SG2014012355A (en) 2014-07-30
CN102540702A (zh) 2012-07-04

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