CN102540702B - 压印引导的嵌段共聚物图案化的系统和方法 - Google Patents
压印引导的嵌段共聚物图案化的系统和方法 Download PDFInfo
- Publication number
- CN102540702B CN102540702B CN201110461878.1A CN201110461878A CN102540702B CN 102540702 B CN102540702 B CN 102540702B CN 201110461878 A CN201110461878 A CN 201110461878A CN 102540702 B CN102540702 B CN 102540702B
- Authority
- CN
- China
- Prior art keywords
- block copolymer
- block
- pattern
- imprint
- imprint resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920001400 block copolymer Polymers 0.000 title claims abstract description 183
- 238000000034 method Methods 0.000 title claims abstract description 128
- 238000000059 patterning Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 15
- 239000006185 dispersion Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001195 polyisoprene Polymers 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229920001519 homopolymer Polymers 0.000 claims description 2
- 239000013256 coordination polymer Substances 0.000 claims 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 150000004702 methyl esters Chemical class 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 239000004205 dimethyl polysiloxane Substances 0.000 description 15
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 15
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 235000013399 edible fruits Nutrition 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000004793 Polystyrene Substances 0.000 description 9
- 229920002223 polystyrene Polymers 0.000 description 8
- 239000011295 pitch Substances 0.000 description 7
- 238000001338 self-assembly Methods 0.000 description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000012661 block copolymerization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 231100000045 chemical toxicity Toxicity 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/015—Imprinting
- B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/957,196 | 2010-11-30 | ||
| US12/957,196 US20120135159A1 (en) | 2010-11-30 | 2010-11-30 | System and method for imprint-guided block copolymer nano-patterning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102540702A CN102540702A (zh) | 2012-07-04 |
| CN102540702B true CN102540702B (zh) | 2017-04-12 |
Family
ID=46126856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110461878.1A Expired - Fee Related CN102540702B (zh) | 2010-11-30 | 2011-11-16 | 压印引导的嵌段共聚物图案化的系统和方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120135159A1 (enExample) |
| JP (1) | JP5883621B2 (enExample) |
| CN (1) | CN102540702B (enExample) |
| SG (2) | SG2014012355A (enExample) |
Families Citing this family (43)
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| US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
| US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
| US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
| US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
| US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
| US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
| US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
| US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
| US20120164389A1 (en) | 2010-12-28 | 2012-06-28 | Yang Xiaomin | Imprint template fabrication and repair based on directed block copolymer assembly |
| US20120196094A1 (en) * | 2011-01-31 | 2012-08-02 | Seagate Technology Llc | Hybrid-guided block copolymer assembly |
| CN102983065B (zh) * | 2011-09-06 | 2015-12-16 | 中芯国际集成电路制造(北京)有限公司 | 图案、掩模图案形成方法和半导体器件制造方法 |
| JP5558444B2 (ja) * | 2011-09-16 | 2014-07-23 | 株式会社東芝 | モールドの製造方法 |
| US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
| US20130193103A1 (en) * | 2012-01-31 | 2013-08-01 | Seagate Technology, Llc | Method of self-aligned fully integrated stck fabrication |
| KR101529646B1 (ko) * | 2012-09-10 | 2015-06-17 | 주식회사 엘지화학 | 실리콘 옥사이드의 나노 패턴 형성 방법, 금속 나노 패턴의 형성 방법 및 이를 이용한 정보저장용 자기 기록 매체 |
| US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
| JP6088803B2 (ja) | 2012-11-16 | 2017-03-01 | 株式会社日立ハイテクノロジーズ | 画像処理装置、自己組織化リソグラフィ技術によるパターン生成方法、及びコンピュータープログラム |
| US9088020B1 (en) | 2012-12-07 | 2015-07-21 | Integrated Photovoltaics, Inc. | Structures with sacrificial template |
| NL2012143A (en) * | 2013-02-14 | 2014-08-18 | Asml Netherlands Bv | Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers. |
| US8821736B1 (en) * | 2013-02-20 | 2014-09-02 | HGST Netherlands B.V. | Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material |
| US9638995B2 (en) * | 2013-03-12 | 2017-05-02 | Seagate Technology Llc | Method of sheared guiding patterns |
| JP2014186773A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | パターンの形成方法、及び磁気記録媒体の製造方法 |
| US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
| KR101449850B1 (ko) * | 2013-05-21 | 2014-10-13 | 한국과학기술원 | 용매 어닐링 방법, 이를 이용한 블록 공중합체 패턴 형성 방법 및 이에 의하여 제조된 블록 공중합체 패턴 |
| JP6167057B2 (ja) * | 2013-05-31 | 2017-07-19 | Ｊｘｔｇエネルギー株式会社 | 凹凸パターン転写用モールドの製造方法及び凹凸構造を有する部材の製造方法 |
| JP6170378B2 (ja) * | 2013-08-29 | 2017-07-26 | 東京エレクトロン株式会社 | エッチング方法 |
| US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
| US9466324B2 (en) | 2013-10-31 | 2016-10-11 | Seagate Technology Llc | Bit patterned media template including alignment mark and method of using same |
| FR3025616A1 (fr) * | 2014-09-10 | 2016-03-11 | Arkema France | Procede de controle du taux de defauts dans des films obtenus avec des melanges de copolymeres a blocs et de polymeres |
| CN104181770B (zh) * | 2014-09-10 | 2017-10-20 | 青岛理工大学 | 一种基于4d打印和纳米压印制造微纳复合结构的方法 |
| US10011713B2 (en) | 2014-12-30 | 2018-07-03 | Dow Global Technologies Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
| US20160186001A1 (en) * | 2014-12-30 | 2016-06-30 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
| US10294359B2 (en) | 2014-12-30 | 2019-05-21 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
| US11021630B2 (en) | 2014-12-30 | 2021-06-01 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
| TWI627219B (zh) | 2015-02-26 | 2018-06-21 | 羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
| TWI588200B (zh) | 2015-02-26 | 2017-06-21 | 羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
| TWI612379B (zh) | 2015-02-26 | 2018-01-21 | Rohm And Haas Electronic Materials Llc | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
| TWI669337B (zh) | 2015-02-26 | 2019-08-21 | 美商羅門哈斯電子材料有限公司 | 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件 |
| CN106252208B (zh) * | 2015-06-12 | 2019-03-08 | 华邦电子股份有限公司 | 图案化方法 |
| JP6688464B2 (ja) * | 2016-07-13 | 2020-04-28 | 株式会社豊田中央研究所 | ナノインプリント転写体の製造方法 |
| FR3060422B1 (fr) | 2016-12-16 | 2019-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fonctionnalisation d'un substrat |
| WO2019203796A1 (en) * | 2018-04-16 | 2019-10-24 | Applied Materials, Inc. | Method for generating features of a material; method for manufacturing a polarizer apparatus, polarizer apparatus, and display system having a polarizer apparatus |
| CN113753849A (zh) * | 2020-06-03 | 2021-12-07 | 芯恩（青岛）集成电路有限公司 | 嵌段共聚物定向自组装刻蚀方法 |
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| CN101038752A (zh) * | 2006-03-16 | 2007-09-19 | 株式会社东芝 | 图案化介质及其生产方法、以及磁性记录设备 |
| CN101578232A (zh) * | 2007-02-08 | 2009-11-11 | 美光科技公司 | 使用嵌段共聚物自组装进行亚光刻图案化的方法 |
| CN101588988A (zh) * | 2007-01-24 | 2009-11-25 | 美光科技公司 | 通过自我组装的嵌段共聚物形成二维阵列的具有亚光刻直径的孔洞 |
| CN101609691A (zh) * | 2008-06-17 | 2009-12-23 | 日立环球储存科技荷兰有限公司 | 制造用于纳米压印图案化磁记录盘的母模的方法 |
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| US20090029189A1 (en) * | 2007-07-25 | 2009-01-29 | Fujifilm Corporation | Imprint mold structure, and imprinting method using the same, as well as magnetic recording medium, and method for manufacturing magnetic recording medium |
| KR100930966B1 (ko) * | 2007-09-14 | 2009-12-10 | 한국과학기술원 | 블록공중합체의 나노구조와 일치하지 않는 형태의 표면패턴상에 형성되는 블록공중합체의 나노구조체 및 그 제조방법 |
| US8993060B2 (en) * | 2008-11-19 | 2015-03-31 | Seagate Technology Llc | Chemical pinning to direct addressable array using self-assembling materials |
-
2010
- 2010-11-30 US US12/957,196 patent/US20120135159A1/en not_active Abandoned
-
2011
- 2011-11-10 SG SG2014012355A patent/SG2014012355A/en unknown
- 2011-11-10 SG SG2011083045A patent/SG181236A1/en unknown
- 2011-11-16 CN CN201110461878.1A patent/CN102540702B/zh not_active Expired - Fee Related
- 2011-11-18 JP JP2011252733A patent/JP5883621B2/ja not_active Expired - Fee Related
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| CN101038752A (zh) * | 2006-03-16 | 2007-09-19 | 株式会社东芝 | 图案化介质及其生产方法、以及磁性记录设备 |
| CN101588988A (zh) * | 2007-01-24 | 2009-11-25 | 美光科技公司 | 通过自我组装的嵌段共聚物形成二维阵列的具有亚光刻直径的孔洞 |
| CN101578232A (zh) * | 2007-02-08 | 2009-11-11 | 美光科技公司 | 使用嵌段共聚物自组装进行亚光刻图案化的方法 |
| CN101609691A (zh) * | 2008-06-17 | 2009-12-23 | 日立环球储存科技荷兰有限公司 | 制造用于纳米压印图案化磁记录盘的母模的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5883621B2 (ja) | 2016-03-15 |
| SG2014012355A (en) | 2014-07-30 |
| US20120135159A1 (en) | 2012-05-31 |
| CN102540702A (zh) | 2012-07-04 |
| SG181236A1 (en) | 2012-06-28 |
| JP2012142065A (ja) | 2012-07-26 |
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