US20130193103A1 - Method of self-aligned fully integrated stck fabrication - Google Patents
Method of self-aligned fully integrated stck fabrication Download PDFInfo
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- US20130193103A1 US20130193103A1 US13/363,039 US201213363039A US2013193103A1 US 20130193103 A1 US20130193103 A1 US 20130193103A1 US 201213363039 A US201213363039 A US 201213363039A US 2013193103 A1 US2013193103 A1 US 2013193103A1
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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Abstract
The embodiments disclose a method of self-aligned fully integrated stack fabrication that includes writing fully integrated self-aligned data and servo two dimensional low-frequency guiding patterns that include encoded servo-information to create various types of self-assembly low-frequency guiding structures, guiding high density self-assembly processes using the low-frequency guiding structures to create high density data and servo fields and etching the high density data and servo fields and low-frequency encoded servo-information into a template substrate to create fully integrated stack master templates to use in the fabrication of stacks such as bit patterned media.
Description
- Bit patterned media (BPM) disk manufacturing includes fabricating master-templates. Fabricating master-templates includes nano-imprint lithography processes. Nano-imprint lithography includes self-assembly processes to create high density patterns. Self-assembly processes create regular patterns such as hexagonal close packed or square structures used for creating BPM data-patterns. Two or more pattern overlay processes are added to create BPM of servo-patterns. Overlay misalignments create inaccuracies in the master templates.
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FIG. 1 shows a block diagram of an overview of a method of self-aligned fully integrated stack fabrication of one embodiment. -
FIG. 2A shows a block diagram of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment. -
FIG. 2B shows a block diagram of a continuation of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment. -
FIG. 2C shows a block diagram of a continuation of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment. -
FIG. 3A shows for illustrative purposes only an example of low frequency large servo and data field guiding patterns of one embodiment. -
FIG. 3B shows for illustrative purposes only an example of a low frequency large encoded servo field patterns in a high frequency data field background of one embodiment. -
FIG. 4 shows for illustrative purposes only an example of low-frequency large servo field guiding patterns transfer process of one embodiment. -
FIG. 5 shows for illustrative purposes only an example of HSQ large servo etching mask process of one embodiment. -
FIG. 6 shows for illustrative purposes only an example of a large servo high frequency guided self-assembly process of one embodiment. -
FIG. 7 shows for illustrative purposes only an example of a large servo stack fabrication master template process of one embodiment. -
FIG. 8A shows for illustrative purposes only an example of low frequency small servo and data field guiding patterns of one embodiment. -
FIG. 8B shows for illustrative purposes only an example of a low frequency small information servo field patterns encoded in a high frequency data field background of one embodiment. -
FIG. 9 shows for illustrative purposes only an example of low-frequency small servo field guiding patterns transfer process of one embodiment. -
FIG. 10 shows for illustrative purposes only an example of HSQ small servo etching mask process of one embodiment. -
FIG. 11 shows for illustrative purposes only an example of a small servo high frequency guided self-assembly process of one embodiment. -
FIG. 12 shows for illustrative purposes only an example of a small servo stack fabrication master template process of one embodiment. - In a following description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration a specific example in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
- It should be noted that the descriptions that follow, for example, in terms of a method of self-aligned fully integrated stack fabrication is described for illustrative purposes and the underlying system can apply to any number and multiple types of stacks and servo-information. In one embodiment the method of self-aligned fully integrated stack fabrication can be configured using numerous etching and guided self assembly processes. The method of self-aligned fully integrated stack fabrication can be configured to include large servo-field patterns that include servo information and can be configured to include small servo-field patterns that include servo information using the present invention.
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FIG. 1 shows a block diagram of an overview of a method of self-aligned fully integrated stack fabrication of one embodiment.FIG. 1 shows the method of self-aligned fully integrated stack fabrication uses a self-aligned fully integrated lithography scheme that avoids overlay steps to create separate data and servo field guiding patterns. The method of self-aligned fully integrated stack fabrication is used to create fully integrated data and servo two dimensional low-frequency guiding patterns 100. The two dimensional low-frequency guiding patterns for the data-fields include traditional sparse hexagonal guiding structures. Larger servo-field patterns guiding structures are created to be compatible with the natural patterns of the low-frequency data-field guiding patterns including the sparse hexagonal guiding structures of one embodiment. - The low-frequency data-field and larger servo information guiding structures are combined into one integrated set of guiding patterns to avoid using overlays of separate data and servo patterns which may cause inaccuracies during the stack fabrication process. The combined integrated set of guiding patterns enables encoding servo information into the low-frequency servo-field patterns at the same time for transfer into the stack during fabrication of one embodiment.
- A process is used to etch low-frequency guiding patterns into an imprint substrate to imprint a resist layer deposited on an
image layer 110. The imprinted resist layer is used to transfer the low-frequency guiding patterns into the image layer deposited onto atemplate substrate 120. A single or multi-layered image layer is deposited onto the template substrate. A wet reverse-tone process or a dry reverse-tone process is used to transfer the low-frequency guiding patterns into the image layer. - The processes continue to use the low-frequency guiding patterns to guide a self-assembly process to create a high-
frequency background 130. The guided self-assembly process creates a high-frequency background in the data-fields and at the same time creates high-frequency background servo-fields that include the low-frequency encoded servo information. The concurrently created fully integrated data and servo fields can be effectively planarized of one embodiment. - In another embodiment a direct-etch process is used to transfer the low-frequency guiding patterns directly into the image layer. A subsequent guided self-assembly process is used to create a high-frequency background of the data-fields and at the same time create the low-frequency encoded servo-fields of one embodiment.
- The method of self-aligned fully integrated stack fabrication continues with a process to etch the high-frequency data and servo fields and low frequency servo information into the
template substrate 140. The etched substrate including the high-frequency data patterns and the low frequency servo patterns forms a fully integrated stackfabrication master template 150 of one embodiment. -
FIG. 2A shows a block diagram of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment.FIG. 2A shows the method of self-aligned fully integrated stack fabrication begins to create low-frequency guiding patterns 200. The low-frequency guiding patterns include data-field patterns 202 and larger servo-field patterns 204. The creation of the larger servo-field patterns 204 may include a process to encode servo-information 206. The process continues to etch low-frequency guiding patterns into animprint template 210. The imprint template is used to transfer the low-frequency guiding patterns into a nano-imprint lithography master-template 212 of one embodiment. - The master-
template 212 is formed using asubstrate 230 using a material such asquartz 232 orsilicon 234. The next step is to deposit animage layer 220 onto thesubstrate 230. The image layer may include a single-layer image layer 222 using materials such as chromium (Cr) 224 or amorphous carbon (a-C) 226. The image layer may include amulti-layer image layer 228. The next process step is to deposit a resistlayer 215 onto the image layer. The description of the processes continues inFIG. 2B of one embodiment. -
FIG. 2B shows a block diagram of a continuation of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment. The process continues fromFIG. 2A including the low-frequency guiding patterns imprint template and the nano-imprint lithography master-template. In one embodiment the imprint template is used to imprint low-frequency guiding patterns 240 into the resist layer. The imprinted resistlayer 242 is cured and may include a descum process. The imprinted resistlayer 242 sets on theimage layer 244 andsubstrate 230 of one embodiment. - In another embodiment e-beam lithography of low-
frequency guiding patterns 236 can be used to transfer the guiding patterns to the resist layer. E-beam lithography by emitting a beam of electrons following the low-frequency guiding patterns exposes the resist layer. An e-beam lithography exposed resistlayer 238 can be developed by removing for example the non-exposed areas of the resist layer materials which for example can be removed using a chemical etching process of one embodiment. - The transfer of the low-frequency guiding patterns using processes such as the imprint template or e-beam lithography form the topography of the low-frequency guiding patterns in the resist layer on top of the
image layer 244 andsubstrate 230. In one embodiment a direct-etch process 250 using a process such asion beam etching 253 is used to etch low-frequency patterns intoimage layer 254 directly. In another embodiment a reverse-tone process 260 is performed using a wetreverse tone process 262 or dryreverse tone process 264 to transfer the low-frequency guiding patterns intoimage layer 244. A continuation of the processing is shown inFIG. 2C of one embodiment. - Guided Self-Assembly Process:
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FIG. 2C shows a block diagram of a continuation of an overview flow chart of a method of self-aligned fully integrated stack fabrication of one embodiment.FIG. 2C shows the continuation of the processes fromFIG. 2B . A high frequency guided self-assembly process 270 uses a suitable self-aligningagent 272 to create a high-frequency background. A suitable self-aligningagent 272 such as Poly Styrene-Poly Dimethylsiloxane (PS-PDMS) 274, Polystyrene Polymethyl Methacrylate (PS-PMMA) 276 or Polystyrene-Polyethylene Oxide (PS-PEO) 278 is used to create high density frequency based on the low-frequency data-field guiding patterns. The structures of the high-frequency data-field patterns 282 may be formed on top of other structures such as etched or imprinted low-frequency patterns. The raised structures produced in the guided self-assembly process are effectively planarized including the low-frequency servo structures. The remaining portions of the high density structures and etched image layer form a mask for an etching process such as e-beam lithography of one embodiment. - The process continues with a step to etch patterns into
substrate 280. The etching transfers the high-frequency data-field patterns 282 and the low frequency servo information encoded servo-field patterns in ahigh frequency background 284 into the substrate material. The remaining portions of the layers deposited on the substrate are removed and the etched substrate cleaned. The remaining etched substrate forms a fully integrated stackfabrication master template 150. The method of self-aligned fully integrated stack fabrication can be used to produce a bit-patterned stackfabrication master template 290 or any other patterned stackfabrication master template 292 of one embodiment. -
FIG. 3A shows for illustrative purposes only an example of low frequency large servo and data field guiding patterns of one embodiment.FIG. 3A shows the combined fully integrated low-frequency twodimensional guiding patterns 300. The two dimensional low-frequency guiding patterns include low-frequency data-field guiding patterns 310. The low-frequency data-field guiding patterns 310 can be written based on traditional sparse hexagonal guiding structures for the data-fields or other low-frequency guiding structures for example guiding structures which use guided self assembly processes to create a high density of one embodiment. - The combined fully integrated low-frequency two
dimensional guiding patterns 300 also include low-frequency large servo-field guiding patterns 320. The low-frequency large servo-field guiding patterns 320 are chosen to be compatible with the natural patterns create by the traditional sparse hexagonal guiding structures for the data-fields. A process to encode servo-information 206 into the low-frequency large servo-field guiding patterns 320 can be used to pattern the servo-information into a stack during the fabrication process. The combined fully integrated low-frequency twodimensional guiding patterns 300 avoids overlaying separate data-field and servo-field patterns which may cause inaccuracies due to miss-positioning of the overlays of one embodiment. -
FIG. 3B shows for illustrative purposes only an example of a low frequency large encoded servo field patterns in a high frequency data field background of one embodiment.FIG. 3B shows a large servo-field high-frequency master template 330 into which have been etched the high-frequencydata field patterns 282 and low frequency large servo information encoded servo field patterns in ahigh frequency background 340. The high-frequencydata field patterns 282 are the result of the guided self assembly process. The guided self assembly process is used to create a high density of data-fields structures from the low-frequency data-field guiding patterns 310 ofFIG. 3A of the combined fully integrated low-frequency twodimensional guiding patterns 300 ofFIG. 3A of one embodiment. -
FIG. 4 ,FIG. 5 ,FIG. 6 andFIG. 7 show the processes used in one embodiment to transfer the low-frequency guiding patterns to create a high-frequency master template. The low-frequency guiding patterns illustrated inFIG. 4 ,FIG. 5 ,FIG. 6 andFIG. 7 include for example large servo field guiding patterns. The one embodiment illustrated shows one of various combinations of processes such as e-beam lithography, guided self-assembly processes and direct-etch processes using the two dimensional low-frequency guiding patterns used to create a fully integrated stack fabrication master template of one embodiment. -
FIG. 4 shows for illustrative purposes only an example of low-frequency large servo field guiding patterns transfer process of one embodiment.FIG. 4 shows a process to deposit a chromium (Cr) image layer on a quartz substrate 415. Thequartz substrate 400 and chromium (Cr)image layer 410 forms the base of the template used to create the master template of one embodiment. - The process proceeds to spin a resist layer onto the
image layer 425. The low-frequency large servo field guiding patterns are etched into a substrate to create a low-frequency large servo field guidingpatterns imprint template 430. The resistlayer 420 is used to imprint the low-frequency large servo field guiding patterns. The next step in the imprinting process is to set low-frequency large servo field guiding patterns imprint template into resistlayer 435 of one embodiment. - An ultraviolet (UV)
light source 440 is used to project ultraviolet (UV) light through the low-frequency large servo field guidingpatterns imprint template 430 to the resist layer. The resist through capillary action fills the cavities of the low frequency guiding patterns. The process to use ultraviolet (UV) light to cure resist 445 material sets the low-frequency large servo field guiding patterns into the resist to form an imprinted resistlayer 460. A process to lift the low-frequency large servo field guiding patterns imprint template from the imprinted resistlayer 450 is completed to reveal the imprinted resistlayer 460. The continuation of the processes is described inFIG. 5 of one embodiment. -
FIG. 5 shows for illustrative purposes only an example of HSQ large servo etching mask process of one embodiment.FIG. 5 shows the continuation processes fromFIG. 4 . The next step may include a process to descum the imprinted resistlayer 500. The next step is to spin hydrogen silsesquioxane (HSQ) 515 on the imprinted resistlayer 460 using a HSQ-based wet reverse tone process. TheHSQ 510 fills the voids of the imprinted resistlayer 460 from the surface of the chromium (Cr)image layer 410 to a level above the imprinted resistlayer 460 of one embodiment. - The spun
HSQ 510 hardens and then is planarized. A HSQ etch-back 525 is used to planarize theHSQ 510. The planarization of the HSQ is achieved using processes such as chemical etching or mechanical planarization. Theplanarized HSQ 520 matches the upper surface level of the imprinted resistlayer 460. An etch-back to remove imprinted resist 535 is processed to reveal the reversetone planarized HSQ 520. Subsequent processes are described inFIG. 6 of one embodiment. -
FIG. 6 shows for illustrative purposes only an example of a large servo high frequency guided self-assembly process of one embodiment. A physical or chemical guide-pattern can be used to enforce long-range order during the self assembly process of block-copolymers, or other self-assembling agents such as nano-particles. It has been demonstrated that this approach can result in large arrays of, for example, round dots in a hexagonally close-packed or square arrangement of one embodiment. - Continuing from the processes described in
FIG. 5 ,FIG. 6 shows the next step is to etch into theCr image layer 620 the low-frequency guiding patterns using a process such as e-beam lithography. Ane-beam writer 600 projects e-beams 610 which pass through the areas where the imprinted resistlayer 460 ofFIG. 4 have been removed. The e-beams 610 etch the low frequency patterns into the chromium (Cr)image layer 410 to the surface of thequartz substrate 400. The reversetone planarized HSQ 520 is resistant to the e-beam etching. A chemical etch back process is used to removeHSQ 630. The etched chromium (Cr)image layer 640 is revealed and portions of thequartz substrate 400 exposed of one embodiment. - A high frequency guided self-
assembly process 160 is used to spin poly styrene-poly dimethylsiloxane (PS-PDMS) and anneal 650 the material to harden the high density structures. The highest portions of the high density structures consist of poly styrene (PS) 660. A chemical process is used to etch-back PS 670. The etched chromium (Cr)image layer 640 and remaining high frequency PDMS structures form a mask in subsequent etching processes. Processes described inFIG. 7 show the continuing process of one embodiment. -
FIG. 7 shows for illustrative purposes only an example of a large servo stack fabrication master template process of one embodiment. The etched chromium (Cr)image layer 640 and remaining high frequency PDMS structures masks formed inFIG. 6 expose portions of the surface of thequartz substrate 400. A process such as e-beam lithography is used to etch intoquartz 700. Thee-beam writer 600 projects e-beams 610 which etch into the exposed surfaces of thequartz substrate 400. Upon completion of the e-beam etching of the quartz etch back processes are used to remove thePDMS 730 structures and removeCr 750 in the etched chromium (Cr)image layer 640. The etchedquartz substrate 760 is cleaned of one embodiment. - The etched
quartz substrate 760 forms the large servo-field high-frequency master template 330. The low frequency large servo information encoded servo field patterns in ahigh frequency background 340 and high-frequencydata field patterns 282 form the fully integrated stackfabrication master template 150. The use of the method of self-aligned fully integrated stack fabrication produces a highly accurate fully integrated stackfabrication master template 150 to fabricate bit-patterned stacks and any other patterned stack media of one embodiment. -
FIG. 8A shows for illustrative purposes only an example of low frequency small servo and data field guiding patterns of one embodiment.FIG. 8A shows one embodiment of the combined fully integrated low-frequency twodimensional guiding patterns 800. The two dimensional low-frequency guiding patterns include low-frequency data-field guiding patterns 310. The low-frequency data-field guiding patterns 310 can be written based on hexagonal close packed or square guiding structures for the data-fields or other low-frequency guiding structures for example guiding structures which use guided self assembly processes to create a high density of one embodiment. - The combined fully integrated low-frequency two
dimensional guiding patterns 800 also include low-frequency small servo-field guiding patterns 810. The low-frequency small servo-field guiding patterns 810 illustrated are chosen to be compatible with the natural patterns create by the square guiding structures for the data-fields. A process to encode servo-information 206 into the low-frequency small servo-field guiding patterns 810 can be used to pattern the servo-information into a stack during the fabrication process of one embodiment. -
FIG. 8B shows for illustrative purposes only an example of a low frequency small information servo field patterns encoded in a high frequency data field background of one embodiment.FIG. 8B shows a small servo-field high-frequency master template 820 into which have been etched the high-frequencydata field patterns 282 and low frequency small servo information encoded servo field patterns in ahigh frequency background 830. The high-frequencydata field patterns 282 are the result of the guided self assembly process using the low-frequency data-field guiding patterns 310 of FIG. 8A from the combined fully integrated low-frequency twodimensional guiding patterns 800 ofFIG. 8A to create a high density of data-fields structures of one embodiment. -
FIG. 9 shows for illustrative purposes only an example of low-frequency small servo field guiding patterns transfer process of one embodiment.FIG. 9 shows the formation of the base of a master template using asilicon substrate 900. A process is used to deposit amorphous-carbon (a-C) image layer on stack silicon substrate 910. An amorphous-carbon (a-C)image layer 920 is used in the transfer of the low-frequency small servo field guiding patterns into thesilicon substrate 900 of one embodiment. - A low-frequency small servo guiding
patterns imprint template 940 is created by etching the low-frequency small servo guiding patterns into a substrate. The transfer process proceeds to spin resist layer ontoimage layer 425. The next step is to set low-frequency small servo field guiding patterns imprint template into resist 930. The resistlayer 950 through capillary action fills the cavities of the low frequency guiding patterns of one embodiment. - An ultraviolet (UV)
light source 440 is used to project ultraviolet (UV) light through the low-frequency small servo guidingpatterns imprint template 940 to the resistlayer 950. The process to use ultraviolet (UV) light to cure resist 445 material sets the low-frequency small servo field guiding patterns into the resist to form an imprinted resistlayer 970. A process to lift the low-frequency small servo guidingpatterns imprint template 940 from the resistlayer 950 is completed to reveal the imprinted resistlayer 970 and portions of the surface of the amorphous-carbon (a-C)image layer 920. The continuation of the processes is described inFIG. 10 of one embodiment. -
FIG. 10 shows for illustrative purposes only an example of HSQ small servo etching mask process of one embodiment. Continuing fromFIG. 9 ,FIG. 10 shows processes which may include a process to descum the imprinted resistlayer 500. The descum process removes possible contaminates from the imprinted resistlayer 970 and amorphous-carbon (a-C)image layer 920 on thesilicon substrate 900 which may interfere with subsequent processes of one embodiment. - A process proceeds to spin hydrogen silsesquioxane (HSQ) 515 over the imprinted resist
layer 970 and exposed surfaces of the amorphous-carbon (a-C)image layer 920. The spunHSQ 510 reaches a level above the imprinted resistlayer 970. A HSQ etch-back 525 lowers the level of the etchedHSQ 520 to match the level of the imprinted resistlayer 970 of one embodiment. - An etch-back to remove imprinted resist 535 exposes HSQ
small servo mask 1010 and HSQ low-frequency data mask 1000 structures. The mask structures leave portions of the surface of the amorphous-carbon (a-C)image layer 920 exposed. Processing continues as described inFIG. 11 of one embodiment. -
FIG. 11 shows for illustrative purposes only an example of a small servo high frequency guided self-assembly process of one embodiment.FIG. 10 described the formation of the mask structures. The next step is the high frequency guided self-assembly process 160. The high frequency guided self-assembly process 160 begins with a process to spin polystyrene-polymethylsiloxane (PS-PDMS) andanneal 1100. The PS-PDMS is spun onto the exposed surfaces of the amorphous-carbon (a-C)image layer 920 of one embodiment. - The upper sections of the PS-PDMS structures include polymethylsiloxane (PDMS) 1105 and the lower sections include polystyrene (PS) 1110. The high density PS-PDMS structures set between the HSQ
small servo mask 1010 and HSQ low-frequency data mask 1000 structures. The masks on the amorphous-carbon (a-C)image layer 920 are used in an etching process of the image layer of one embodiment. - An ion
beam etching process 600 etches intoa-C image layer 1140. The etching is followed by processes to remove PS-PDMS andHSQ 1145. The removal of the HSQ small servo mask 1120, HSQ data mask 1125 and PS-PDMS data mask 1130 exposes the etched a-C image layer highfrequency data mask 1150 and etched a-C image layer low frequencysmall servo mask 1160. Processes continue as described inFIG. 12 of one embodiment. -
FIG. 12 shows for illustrative purposes only an example of a small servo stack fabrication master template process of one embodiment.FIG. 12 shows an e-beam lithography process using an ion beam etching process 1205 that projects anion beam 610 to etch into silicon substrate 1200. The etched a-C image layer highfrequency data mask 1150 and etched a-C image layer low frequencysmall servo mask 1160 protect thesilicon substrate 900 from undesired etching. A process is used to remove a-C image layer 1210 and expose the etched silicon substrate 1215 of one embodiment. - The etched silicon substrate 1215 includes the high frequency data patterns and low frequency
small servo patterns 820. The etched silicon substrate 1215 forms the small servo-field high-frequency master template 1220. The low frequency small servo information encoded servo field patterns in ahigh frequency background 830 ofFIG. 8B and high-frequencydata field patterns 282 form the fully integrated stackfabrication master template 150. Highly accurate fabrication of patterned stacks for example bit-patterned stacks is achievable using the method of self-aligned fully integrated stack fabrication of one embodiment. - The foregoing has described the principles, embodiments and modes of operation. However, the invention should not be construed as being limited to the particular embodiments discussed. The above described embodiments should be regarded as illustrative rather than restrictive, and it should be appreciated that variations may be made in those embodiments by workers skilled in the art without departing from the scope as defined by the following claims.
Claims (20)
1. A method of self-aligned fully integrated stack fabrication, comprising:
writing fully integrated self-aligned data and servo two dimensional low-frequency guiding patterns that include encoded servo-information and configured to create various types of self-assembly low-frequency guiding structures;
guiding high density self-assembly processes using the low-frequency guiding structures and configured to create high density data and servo fields; and
etching the high density data and servo fields and low-frequency encoded servo-information into a template substrate and configured to create fully integrated stack master templates.
2. The method of claim 1 , wherein the self-assembly low-frequency guiding structures include various types of structures such as hexagonal close packed and square guiding structures and configured to create low-frequency data and servo fields.
3. The method of claim 2 , wherein servo-field low-frequency guiding structures are larger than data-field low-frequency guiding structures and are configured to be compatible with self-assembly long-range order natural patterns.
4. The method of claim 1 , further comprising depositing a resist layer on an image layer deposition on the template substrate and imprinting the resist layer with the self-aligned fully integrated data and servo two dimensional low-frequency guiding patterns.
5. The method of claim 1 , wherein various low-frequency patterned self-assembly guiding structures created in the imprinted resist layer are transferred to the image layer using transfer processes such as a wet reverse-tone process and a dry reverse-tone process.
6. The method of claim 1 , wherein the image layer deposition onto the template substrate is configured to include single layer and multi-layered image layers using materials such as chromium and amorphous carbon.
7. The method of claim 1 , further comprising using a direct-etch process to transfer directly into the image layer the self-aligned fully integrated data and servo two dimensional low-frequency guiding patterns.
8. The method of claim 1 , wherein the guided self-assembly process includes using various self-assembling agents such as poly styrene-poly dimethylsiloxane (PS-PDMS), polystyrene polymethyl methacrylate (PS-PMMA), polystyrene-polyethylene oxide (PS-PEO) and any other suitable self-aligning agents.
9. The method of claim 8 , wherein the high density self-assembly process creates a high-frequency background on the image layer enabling effective planarization.
10. The method of claim 1 , wherein the template substrate includes the use of materials such as quartz and silicon.
11. The method of claim 1 , wherein etching the high density data and servo fields and low-frequency encoded servo-information into the template substrate is a single process avoiding overlays and includes the use of e-beam lithography.
12. The method of claim 1 , further comprising using various combinations of processes such as e-beam lithography, guided self-assembly processes and direct-etch processes using the two dimensional low-frequency guiding patterns to create a fully integrated stack fabrication master template.
13. An apparatus, comprising:
means for writing self-aligned data and servo two dimensional low-frequency guiding patterns that includes encoded servo-information; and
means for fully integrating various compatible two dimensional low-frequency self-assembly guiding structures created using the self-aligned data and servo two dimensional low-frequency guiding patterns, wherein the fully integrated compatible two dimensional low-frequency self-assembly guiding structures are used in processes to pattern stack master-templates.
14. The apparatus of 13, further comprising means wherein the low-frequency data-field guiding patterns are written to create natural patterned guiding structures such as sparse hexagonal and wherein the low-frequency servo-field guiding patterns are written to create guiding structures compatible with the low-frequency data-field natural patterned guiding structures.
15. The apparatus of 13, further comprising means for encoding servo-information into the low-frequency large servo-field guiding pattern structures.
16. The apparatus of 13, further comprising means for concurrent etching of the low-frequency data-field patterns and low-frequency large servo-field guiding patterns into a single nano-imprint template.
17. A fully integrated stack patterning system, comprising:
compatible fully integrated self-aligned data and servo two dimensional low-frequency guiding patterns written and configured to include encoded servo-information;
various types of compatible self-assembly low-frequency guiding structures created using the two dimensional low-frequency guiding patterns; and
high density data and servo field structures created using a self-assembly process guided by the low-frequency guiding structures, together with the low-frequency encoded servo-information structures are etched into a substrate and configured to create a patterned fully integrated stack fabrication master template.
18. The fully integrated stack patterning system of claim 17 , wherein the data two dimensional low-frequency guiding patterns include natural patterns configured to create low-frequency data guiding structures such as sparse hexagonal guiding structures.
19. The fully integrated stack patterning system of claim 17 , wherein the servo two dimensional low-frequency guiding patterns are configured to create low-frequency servo guiding structures that are larger than and compatible with the natural patterns of the low-frequency data guiding structures.
20. The fully integrated stack patterning system of claim 17 , wherein the high density data and servo field structures including the low-frequency encoded servo-information structures are planarized.
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US13/363,039 US20130193103A1 (en) | 2012-01-31 | 2012-01-31 | Method of self-aligned fully integrated stck fabrication |
US14/621,299 US9349406B2 (en) | 2012-01-31 | 2015-02-12 | Combining features using directed self-assembly to form patterns for etching |
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US13/363,039 Abandoned US20130193103A1 (en) | 2012-01-31 | 2012-01-31 | Method of self-aligned fully integrated stck fabrication |
US14/621,299 Active US9349406B2 (en) | 2012-01-31 | 2015-02-12 | Combining features using directed self-assembly to form patterns for etching |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150155164A1 (en) * | 2012-07-16 | 2015-06-04 | Seagate Technology Llc | Patterned mask using cured spin-on-glass composition |
US9424872B1 (en) | 2015-07-31 | 2016-08-23 | Seagate Technologies Llc | Imprint template for patterned recording media |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101207381B1 (en) * | 2006-11-01 | 2012-12-05 | 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 | Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture |
US7767099B2 (en) * | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
US8114300B2 (en) * | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
NL2005865A (en) * | 2010-02-16 | 2011-08-17 | Asml Netherlands Bv | Imprint lithography. |
JP4937372B2 (en) * | 2010-03-30 | 2012-05-23 | 株式会社東芝 | Magnetic recording medium |
US8673541B2 (en) * | 2010-10-29 | 2014-03-18 | Seagate Technology Llc | Block copolymer assembly methods and patterns formed thereby |
US20120135159A1 (en) * | 2010-11-30 | 2012-05-31 | Seagate Technology Llc | System and method for imprint-guided block copolymer nano-patterning |
NL2007940A (en) * | 2010-12-23 | 2012-06-27 | Asml Netherlands Bv | Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography. |
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2012
- 2012-01-31 US US13/363,039 patent/US20130193103A1/en not_active Abandoned
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2015
- 2015-02-12 US US14/621,299 patent/US9349406B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150155164A1 (en) * | 2012-07-16 | 2015-06-04 | Seagate Technology Llc | Patterned mask using cured spin-on-glass composition |
US9348219B2 (en) * | 2012-07-16 | 2016-05-24 | Seagate Technology Llc | Patterned mask using cured spin-on-glass composition |
US9424872B1 (en) | 2015-07-31 | 2016-08-23 | Seagate Technologies Llc | Imprint template for patterned recording media |
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US20150154997A1 (en) | 2015-06-04 |
US9349406B2 (en) | 2016-05-24 |
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