JP5882563B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP5882563B2 JP5882563B2 JP2009546044A JP2009546044A JP5882563B2 JP 5882563 B2 JP5882563 B2 JP 5882563B2 JP 2009546044 A JP2009546044 A JP 2009546044A JP 2009546044 A JP2009546044 A JP 2009546044A JP 5882563 B2 JP5882563 B2 JP 5882563B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode layer
- shunt
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003466 welding Methods 0.000 claims description 31
- 238000001465 metallisation Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000004927 fusion Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 132
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007736 thin film deposition technique Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
15 層のスタック
20 基礎層
30 第1電極層
40、40'、40'' 第2電極層
50 有機発光層
60、60' シャント要素
61 シャント要素60・60'の幅
62 シャント要素60・60の高さ
65 接続端部
66 自由端部
70、70' 金属化要素
80 発光タイル
90 絶縁手段
91 絶縁空隙
Claims (9)
- 基礎層、第1電極層及び第2電極層を含む層のスタックを有する発光素子であって、
有機発光層が前記第1及び前記第2電極層の間に挟まれ、
少なくとも2つのシャント要素が、それぞれ、接続端部及び自由端部を有し、
前記第1のシャント要素の前記接続端部が前記第1電極層と接続され、前記第2のシャント要素の前記接続端部が前記第2電極層と接続され、
前記自由端部が、前記層のスタックから突出している、
発光素子。 - 請求項1に記載の発光素子において、
前記シャント要素が、50μmから4mmの間の幅を有し、前記シャント要素が、20μmから800μmの間の高さを有することを特徴とする、発光素子。 - 請求項1又は2に記載の発光素子において、
前記シャント要素が、30×10 6 S/mより高い電気伝導性を有することを特徴とする、発光素子。 - 請求項1乃至3のいずれか一項に記載の発光素子において、
金属化要素が、前記電極層のうちの1つと接続され、前記金属化要素が、前記電極層と前記シャント要素の前記接続端部との間に挟まれることを特徴とする発光素子。 - 請求項4に記載の発光素子において、
前記金属化要素が、1nmから100nmの層厚さを有することを特徴とする発光素子。 - 請求項1乃至5のいずれか一項に記載の発光素子において、
前記第1電極層、前記第2電極層及び前記有機発光層が発光タイルであり、複数の発光タイルが1つの基礎層に堆積され、前記発光タイルは、20mm×20mmから250mm×250mmの間の寸法を有することを特徴とする発光素子。 - 請求項6に記載の発光素子において、
前記第1電極層と接続される前記シャント要素が、3つの側から前記発光タイルを取り囲み、前記第2電極層と接続される前記シャント要素が、1つの側から前記発光タイルを縁取ることを特徴とする発光素子。 - 請求項1に記載の発光素子を製造する方法であって、
−前記少なくとも2つのシャント要素を前記電極層へ糊付け又は溶接するステップ、
を含む、方法。 - 請求項8に記載の方法において、
前記溶接するステップが、レーザー溶接、熱融着、抵抗溶接、電子ビーム溶接、及び超音波溶接の群のうちの少なくとも1つであることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07100924.5 | 2007-01-22 | ||
EP07100924 | 2007-01-22 | ||
PCT/IB2008/050167 WO2008090493A1 (en) | 2007-01-22 | 2008-01-17 | Light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010517215A JP2010517215A (ja) | 2010-05-20 |
JP5882563B2 true JP5882563B2 (ja) | 2016-03-09 |
Family
ID=39304757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009546044A Active JP5882563B2 (ja) | 2007-01-22 | 2008-01-17 | 発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8179036B2 (ja) |
EP (1) | EP2106623B1 (ja) |
JP (1) | JP5882563B2 (ja) |
CN (1) | CN101589485B (ja) |
TW (1) | TW200845455A (ja) |
WO (1) | WO2008090493A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010041611A1 (ja) * | 2008-10-06 | 2010-04-15 | 旭硝子株式会社 | 電子デバイス用基板、その製造方法、これを用いた電子デバイス、その製造方法及び有機led素子用基板 |
EP2202819A1 (en) * | 2008-12-29 | 2010-06-30 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Electro-optic device and method for manufacturing the same |
WO2010089683A1 (en) * | 2009-02-05 | 2010-08-12 | Philips Intellectual Property & Standards Gmbh | Electroluminescent device |
JP5702736B2 (ja) * | 2009-02-05 | 2015-04-15 | コーニンクレッカ フィリップス エヌ ヴェ | エレクトロルミネセント素子 |
JP5608683B2 (ja) * | 2009-02-05 | 2014-10-15 | コーニンクレッカ フィリップス エヌ ヴェ | エレクトロルミネッセンス装置 |
CA2751559A1 (en) * | 2009-02-05 | 2010-08-12 | Koninklijke Philips Electronics N.V. | Electroluminescent device |
CN102422452B (zh) | 2009-05-08 | 2015-03-25 | 皇家飞利浦电子股份有限公司 | 电致发光设备 |
US8137148B2 (en) * | 2009-09-30 | 2012-03-20 | General Electric Company | Method of manufacturing monolithic parallel interconnect structure |
CN103109226B (zh) | 2010-09-22 | 2017-02-08 | 皇家飞利浦电子股份有限公司 | 多视图显示设备 |
FR2965407A1 (fr) * | 2010-09-27 | 2012-03-30 | Saint Gobain | Procédé de connexion(s) électrique(s) d'un dispositif a diode électroluminescente organique encapsule et un tel dispositif oled |
DE102010042132A1 (de) * | 2010-10-07 | 2012-04-26 | Ledon Oled Lighting Gmbh & Co.Kg | Leuchtelement mit OLED-Modulen |
DE102011077687B4 (de) * | 2011-06-17 | 2021-05-12 | Pictiva Displays International Limited | Organische leuchtdiode, verfahren zur herstellung einer organischen leuchtdiode und modul mit mindestens zwei organischen leuchtdioden |
DE102012219712A1 (de) * | 2012-10-29 | 2014-04-30 | Tridonic Dresden Gmbh & Co. Kg | Leuchtmodul mit optimierter Kontaktierung |
DE102018200659B4 (de) * | 2018-01-16 | 2020-11-05 | Continental Automotive Gmbh | Mehrfachschichtanordnung für eine flächig ausgestaltete schaltbare Verglasung, Verglasung und Fahrzeug |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4608105B2 (ja) * | 1999-04-02 | 2011-01-05 | 出光興産株式会社 | 有機エレクトロルミネッセンス表示装置およびその製造方法 |
JP4434411B2 (ja) * | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機el発光装置およびその製造方法 |
JP2003045674A (ja) * | 2001-08-02 | 2003-02-14 | Seiko Instruments Inc | 有機エレクトロルミネセンス素子 |
JP2003123990A (ja) * | 2001-10-17 | 2003-04-25 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
KR100504472B1 (ko) * | 2002-09-05 | 2005-08-04 | 엘지전자 주식회사 | 유기 el 소자 및 그 제조 방법 |
JP4600284B2 (ja) * | 2003-10-28 | 2010-12-15 | 住友金属鉱山株式会社 | 透明導電積層体とその製造方法及び透明導電積層体を用いたデバイス |
WO2005053053A1 (en) | 2003-11-26 | 2005-06-09 | Koninklijke Philips Electronics N.V. | Light-emitting device comprising an etch-protective layer |
JP2005267991A (ja) * | 2004-03-18 | 2005-09-29 | Hitachi Ltd | 表示装置 |
KR100623252B1 (ko) * | 2004-04-07 | 2006-09-18 | 삼성에스디아이 주식회사 | 전면 발광 유기 전계 발광 소자 및 그의 제조방법 |
CN100539787C (zh) | 2004-12-16 | 2009-09-09 | 皇家飞利浦电子股份有限公司 | 显示板及其制造方法 |
US20070013293A1 (en) | 2005-07-12 | 2007-01-18 | Eastman Kodak Company | OLED device having spacers |
DE102006016373A1 (de) * | 2006-04-05 | 2007-10-11 | Merck Patent Gmbh | Großflächige OLED's mit homogener Lichtemission |
US7892059B2 (en) * | 2006-05-10 | 2011-02-22 | Casio Computer Co., Ltd. | Manufacturing method for organic electroluminescent display device including etching partition wall after imparting lyophilicity to partion wall and pixel electrode |
-
2008
- 2008-01-17 JP JP2009546044A patent/JP5882563B2/ja active Active
- 2008-01-17 CN CN2008800027717A patent/CN101589485B/zh active Active
- 2008-01-17 EP EP08702453.5A patent/EP2106623B1/en active Active
- 2008-01-17 WO PCT/IB2008/050167 patent/WO2008090493A1/en active Application Filing
- 2008-01-17 US US12/523,167 patent/US8179036B2/en active Active
- 2008-01-21 TW TW097102239A patent/TW200845455A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101589485A (zh) | 2009-11-25 |
CN101589485B (zh) | 2013-01-02 |
WO2008090493A1 (en) | 2008-07-31 |
US8179036B2 (en) | 2012-05-15 |
EP2106623B1 (en) | 2014-01-01 |
TW200845455A (en) | 2008-11-16 |
US20100109513A1 (en) | 2010-05-06 |
EP2106623A1 (en) | 2009-10-07 |
JP2010517215A (ja) | 2010-05-20 |
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