JP5106413B2 - 有機led素子 - Google Patents
有機led素子 Download PDFInfo
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- JP5106413B2 JP5106413B2 JP2008545193A JP2008545193A JP5106413B2 JP 5106413 B2 JP5106413 B2 JP 5106413B2 JP 2008545193 A JP2008545193 A JP 2008545193A JP 2008545193 A JP2008545193 A JP 2008545193A JP 5106413 B2 JP5106413 B2 JP 5106413B2
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- 239000010410 layer Substances 0.000 claims description 125
- 229910052751 metal Inorganic materials 0.000 claims description 108
- 239000002184 metal Substances 0.000 claims description 108
- 239000012044 organic layer Substances 0.000 claims description 54
- 239000012876 carrier material Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 26
- 239000011888 foil Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000005401 electroluminescence Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000010931 gold Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000011049 filling Methods 0.000 description 6
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000001010 compromised effect Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Description
有機エレクトロルミネッセンス素子は、担体材料11の上部に以下の層スタックを有する。この例において、金が拡散バリア層13として使用された。:
Cu(35μm)/ Au(1μm)/ PEDOT(100nm)/ α-NPD(15nm)/ α-NPD:ルブレン(15nm)/ AlQ3(60nm)/ LiF(1nm)/ Al(10nm)
有機エレクトロルミネッセンス素子は、担体材料11の上部に以下の層スタックを有する。この例において、銀が拡散バリア層13として使用された。:
Cu(35μm)/ Ag(1μm)/ PEDOT(100nm)/ α-NPD(15nm)/ α-NPD:ルブレン(15nm)/ AlQ3(60nm)/ LiF(1nm)/ Al(10nm)
Claims (10)
- 少なくとも一部透明な上部電極を介して光を放射する層スタックを有する有機エレクトロルミネッセンス素子であって、
基板として上部側及び下部側を有する担体材料と、前記担体材料の前記上部側において0.05Ω/平方より少ないシート抵抗値になるような厚さを有する第1金属層と、を含む伝導性ホイルであって、前記第1金属層が底部電極として少なくとも第1金属領域を有し、前記第1金属層が、更に、前記第1金属領域から電気的に絶縁され、且つ前記透明な上部電極に直接電気接触を提供するように設計される第2金属領域を含む、、伝導性ホイルと、
前記底部電極の上において沈着され、光を放射するように設計される、有機層スタックと、
前記有機層スタックの上における前記透明な上部電極と、
少なくとも前記透明な上部電極及び前記有機層スタックを覆う少なくとも一部透明な保護要素と、
を備え、
前記伝導性ホイルが、更に、
前記担体材料の前記下部側において0.05Ω/平方より少ないシート抵抗値になる厚さを有する第2金属層と、
前記担体材料の前記上部側における前記第1金属層の前記第2金属領域へ前記第2金属層を接続させるための、前記担体材料を介した少なくとも1つの伝導経路と、
を含む、
有機エレクトロルミネッセンス素子。 - 請求項1に記載の有機エレクトロルミネッセンス素子において、前記第1金属層が、更に、前記有機層スタックとの界面において伝導拡散バリア層を含むことを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1又は2に記載の有機エレクトロルミネッセンス素子において、前記透明な上部電極が、インジウムスズ酸化物から作製される、ことを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1又は2に記載の有機エレクトロルミネッセンス素子において、前記透明な上部電極が、20nmより下の厚さを有し、前記有機層スタックとの界面において上部金属層及び電子注入層を含むことを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1に記載の有機エレクトロルミネッセンス素子において、前記層スタックの前記層が、非放射領域によって互いに分離される発光副タイルを形成するために副領域にパターン化され、前記第1金属領域及び前記第2金属領域のそれぞれは、各副タイルへの伝導金属トラックを提供するように副領域にパターン化されることを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1又は5に記載の有機エレクトロルミネッセンス素子において、前記第1金属層の前記第1及び第2金属領域が、絶縁充填材料によって分離されることを特徴とすることを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1ないし6のいずれか一項に記載の有機エレクトロルミネッセンス素子において、前記伝導性ホイルが、柔軟な担体材料を含む柔軟な伝導性ホイルであることを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1ないし7のいずれか一項に記載の有機エレクトロルミネッセンス素子において、前記保護要素が、少なくとも前記透明な上部電極及び前記有機層スタックを覆う、透明な、化学的に不活性な層を含むことを特徴とする、有機エレクトロルミネッセンス素子。
- 請求項1ないし8のいずれか一項に記載の有機エレクトロルミネッセンス素子において、少なくとも前記第1金属層が銅を含むことを特徴とする、有機エレクトロルミネッセンス素子。
- 上部電極及び底部電極の間において光を放射する有機層スタックを有する有機エレクトロルミネッセンスを形成する方法であって、
0.05Ω/平方より低いシート抵抗値を有し、第1金属領域及び第2金属領域を含む第1金属層であって、前記第1金属領域が、前記第2金属領域から電気的に絶縁され、第1金属領域が、底部電極として作用するような前記第1金属層を、基板の第1の側に設けることによって、伝導性ホイルを提供するステップと、
前記底部電極の上に前記有機層スタックを形成するステップと、
少なくとも前記透明な上部電極及び前記有機層スタックを覆う少なくとも一部透明な保護要素を設けるステップと、
前記基板の反対側である前記基板の第2の側において、0.05Ω/平方より少ないシート抵抗値を有する第2金属層を設けるステップと、
前記基板において、前記第1金属層の前記第2金属領域へ前記第2金属層を接続させるための伝導経路を形成するステップと、
を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05112417.0 | 2005-12-19 | ||
EP05112417 | 2005-12-19 | ||
PCT/IB2006/054696 WO2007072275A2 (en) | 2005-12-19 | 2006-12-08 | Organic led device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009520347A JP2009520347A (ja) | 2009-05-21 |
JP5106413B2 true JP5106413B2 (ja) | 2012-12-26 |
Family
ID=38134588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008545193A Active JP5106413B2 (ja) | 2005-12-19 | 2006-12-08 | 有機led素子 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7990054B2 (ja) |
EP (1) | EP1966843B1 (ja) |
JP (1) | JP5106413B2 (ja) |
KR (1) | KR101345344B1 (ja) |
CN (1) | CN101341608B (ja) |
RU (1) | RU2414018C2 (ja) |
TW (1) | TWI470848B (ja) |
WO (1) | WO2007072275A2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102381391B1 (ko) | 2015-04-16 | 2022-03-31 | 삼성디스플레이 주식회사 | 표시 장치 |
DE102008020816B4 (de) * | 2008-02-29 | 2019-10-10 | Osram Oled Gmbh | Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode |
WO2009154168A1 (ja) * | 2008-06-17 | 2009-12-23 | 株式会社日立製作所 | 有機発光素子、その作製方法、その作製装置及びそれを用いた有機発光装置 |
JP2010032838A (ja) * | 2008-07-30 | 2010-02-12 | Sumitomo Chemical Co Ltd | 表示装置および表示装置の製造方法 |
CN102341932B (zh) | 2009-03-05 | 2015-09-02 | 皇家飞利浦电子股份有限公司 | 串联连接的oled |
US8613671B2 (en) * | 2009-06-08 | 2013-12-24 | Cfph, Llc | Data transfer and control among multiple computer devices in a gaming environment |
US8545327B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values |
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US8419535B2 (en) * | 2009-06-08 | 2013-04-16 | Cfph, Llc | Mobile playing card devices |
US8771078B2 (en) | 2009-06-08 | 2014-07-08 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game of chance |
US8784189B2 (en) | 2009-06-08 | 2014-07-22 | Cfph, Llc | Interprocess communication regarding movement of game devices |
US8287386B2 (en) * | 2009-06-08 | 2012-10-16 | Cfph, Llc | Electrical transmission among interconnected gaming systems |
EP2513999A1 (en) * | 2009-12-16 | 2012-10-24 | Koninklijke Philips Electronics N.V. | Method for creating serial connected oled-devices |
WO2011096923A1 (en) * | 2010-02-03 | 2011-08-11 | Universal Display Corporation | Organic light emitting device with conducting cover |
WO2011096922A1 (en) * | 2010-02-03 | 2011-08-11 | Universal Display Corporation | Organic light emitting device with enhanced emission uniformity |
KR101084271B1 (ko) | 2010-02-09 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 그 제조 방법 |
DE102010042132A1 (de) * | 2010-10-07 | 2012-04-26 | Ledon Oled Lighting Gmbh & Co.Kg | Leuchtelement mit OLED-Modulen |
CN104094431B (zh) * | 2012-02-03 | 2018-03-27 | 皇家飞利浦有限公司 | Oled设备及其制造 |
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WO2007072275A2 (en) | 2007-06-28 |
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WO2007072275A3 (en) | 2007-10-11 |
EP1966843B1 (en) | 2017-08-30 |
CN101341608B (zh) | 2011-05-18 |
CN101341608A (zh) | 2009-01-07 |
JP2009520347A (ja) | 2009-05-21 |
KR20080081049A (ko) | 2008-09-05 |
US7990054B2 (en) | 2011-08-02 |
RU2008129758A (ru) | 2010-01-27 |
TW200731591A (en) | 2007-08-16 |
RU2414018C2 (ru) | 2011-03-10 |
TWI470848B (zh) | 2015-01-21 |
US20080265759A1 (en) | 2008-10-30 |
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