JP5861947B2 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP5861947B2
JP5861947B2 JP2014020387A JP2014020387A JP5861947B2 JP 5861947 B2 JP5861947 B2 JP 5861947B2 JP 2014020387 A JP2014020387 A JP 2014020387A JP 2014020387 A JP2014020387 A JP 2014020387A JP 5861947 B2 JP5861947 B2 JP 5861947B2
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JP
Japan
Prior art keywords
layer
light emitting
emitting device
semiconductor light
type semiconductor
Prior art date
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Active
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JP2014020387A
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English (en)
Japanese (ja)
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JP2015149342A (ja
JP2015149342A5 (enExample
Inventor
晃平 三好
晃平 三好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP2014020387A priority Critical patent/JP5861947B2/ja
Priority to PCT/JP2015/052791 priority patent/WO2015119066A1/ja
Priority to US15/116,268 priority patent/US20170012166A1/en
Priority to CN201580005053.5A priority patent/CN105917478A/zh
Publication of JP2015149342A publication Critical patent/JP2015149342A/ja
Publication of JP2015149342A5 publication Critical patent/JP2015149342A5/ja
Application granted granted Critical
Publication of JP5861947B2 publication Critical patent/JP5861947B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
JP2014020387A 2014-02-05 2014-02-05 半導体発光素子及びその製造方法 Active JP5861947B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014020387A JP5861947B2 (ja) 2014-02-05 2014-02-05 半導体発光素子及びその製造方法
PCT/JP2015/052791 WO2015119066A1 (ja) 2014-02-05 2015-02-02 半導体発光素子
US15/116,268 US20170012166A1 (en) 2014-02-05 2015-02-02 Semiconductor light-emitting element
CN201580005053.5A CN105917478A (zh) 2014-02-05 2015-02-02 半导体发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014020387A JP5861947B2 (ja) 2014-02-05 2014-02-05 半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015149342A JP2015149342A (ja) 2015-08-20
JP2015149342A5 JP2015149342A5 (enExample) 2015-11-26
JP5861947B2 true JP5861947B2 (ja) 2016-02-16

Family

ID=53777871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014020387A Active JP5861947B2 (ja) 2014-02-05 2014-02-05 半導体発光素子及びその製造方法

Country Status (4)

Country Link
US (1) US20170012166A1 (enExample)
JP (1) JP5861947B2 (enExample)
CN (1) CN105917478A (enExample)
WO (1) WO2015119066A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6135954B2 (ja) * 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
DE102016112294A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
KR102292543B1 (ko) 2016-08-31 2021-08-20 재팬 사이언스 앤드 테크놀로지 에이전시 화합물 반도체, 그 제조 방법 및 질화물 반도체
DE102017109804A1 (de) * 2017-05-08 2018-11-08 Osram Opto Semiconductors Gmbh Halbleiterlaser
KR102517883B1 (ko) 2017-06-01 2023-04-04 재팬 사이언스 앤드 테크놀로지 에이전시 화합물 반도체 및 그 제조 방법
JP6438542B1 (ja) * 2017-07-27 2018-12-12 日機装株式会社 半導体発光素子
JP7149486B2 (ja) * 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP2025017479A (ja) * 2023-07-25 2025-02-06 日機装株式会社 窒化物半導体発光素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102675A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 半導体発光素子
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
KR100631971B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광 소자
JP4835010B2 (ja) * 2005-03-17 2011-12-14 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオードおよび照明装置
KR20090117538A (ko) * 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
JP5549338B2 (ja) * 2010-04-09 2014-07-16 ウシオ電機株式会社 紫外光放射用窒素化合物半導体ｌｅｄおよびその製造方法
JP5372045B2 (ja) * 2011-02-25 2013-12-18 株式会社東芝 半導体発光素子

Also Published As

Publication number Publication date
JP2015149342A (ja) 2015-08-20
WO2015119066A1 (ja) 2015-08-13
CN105917478A (zh) 2016-08-31
US20170012166A1 (en) 2017-01-12

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