CN105917478A - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN105917478A
CN105917478A CN201580005053.5A CN201580005053A CN105917478A CN 105917478 A CN105917478 A CN 105917478A CN 201580005053 A CN201580005053 A CN 201580005053A CN 105917478 A CN105917478 A CN 105917478A
Authority
CN
China
Prior art keywords
layer
emitting element
semiconductor light
type semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580005053.5A
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English (en)
Chinese (zh)
Inventor
三好晃平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of CN105917478A publication Critical patent/CN105917478A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
CN201580005053.5A 2014-02-05 2015-02-02 半导体发光元件 Pending CN105917478A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014020387A JP5861947B2 (ja) 2014-02-05 2014-02-05 半導体発光素子及びその製造方法
JP2014-020387 2014-09-16
PCT/JP2015/052791 WO2015119066A1 (ja) 2014-02-05 2015-02-02 半導体発光素子

Publications (1)

Publication Number Publication Date
CN105917478A true CN105917478A (zh) 2016-08-31

Family

ID=53777871

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580005053.5A Pending CN105917478A (zh) 2014-02-05 2015-02-02 半导体发光元件

Country Status (4)

Country Link
US (1) US20170012166A1 (enExample)
JP (1) JP5861947B2 (enExample)
CN (1) CN105917478A (enExample)
WO (1) WO2015119066A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417113A (zh) * 2016-07-05 2019-03-01 欧司朗光电半导体有限公司 半导体层序列
CN110998876A (zh) * 2017-07-27 2020-04-10 日机装株式会社 半导体发光元件
US11549172B2 (en) 2016-08-31 2023-01-10 Japan Science And Technology Agency Compound semiconductor, method for manufacturing same, and nitride semiconductor
US11888033B2 (en) 2017-06-01 2024-01-30 Japan Science And Technology Agency Compound semiconductor and method for manufacturing same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6135954B2 (ja) * 2015-10-22 2017-05-31 ウシオ電機株式会社 窒化物半導体発光素子
DE102017109804A1 (de) * 2017-05-08 2018-11-08 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP7149486B2 (ja) * 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP2025017479A (ja) * 2023-07-25 2025-02-06 日機装株式会社 窒化物半導体発光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102675A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 半導体発光素子
CN1409875A (zh) * 1999-12-13 2003-04-09 日亚化学工业株式会社 发光元件
JP4835010B2 (ja) * 2005-03-17 2011-12-14 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオードおよび照明装置
JP2012178386A (ja) * 2011-02-25 2012-09-13 Toshiba Corp 半導体発光素子
CN102792470A (zh) * 2010-04-09 2012-11-21 优志旺电机株式会社 氮化合物半导体发光元件及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100631971B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광 소자
KR20090117538A (ko) * 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102675A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 半導体発光素子
CN1409875A (zh) * 1999-12-13 2003-04-09 日亚化学工业株式会社 发光元件
JP4835010B2 (ja) * 2005-03-17 2011-12-14 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオードおよび照明装置
CN102792470A (zh) * 2010-04-09 2012-11-21 优志旺电机株式会社 氮化合物半导体发光元件及其制造方法
JP2012178386A (ja) * 2011-02-25 2012-09-13 Toshiba Corp 半導体発光素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417113A (zh) * 2016-07-05 2019-03-01 欧司朗光电半导体有限公司 半导体层序列
US10840411B2 (en) 2016-07-05 2020-11-17 Osram Oled Gmbh Semiconductor layer sequence
CN109417113B (zh) * 2016-07-05 2021-10-15 欧司朗光电半导体有限公司 半导体层序列
US11549172B2 (en) 2016-08-31 2023-01-10 Japan Science And Technology Agency Compound semiconductor, method for manufacturing same, and nitride semiconductor
US11888033B2 (en) 2017-06-01 2024-01-30 Japan Science And Technology Agency Compound semiconductor and method for manufacturing same
CN110998876A (zh) * 2017-07-27 2020-04-10 日机装株式会社 半导体发光元件
CN110998876B (zh) * 2017-07-27 2023-04-18 日机装株式会社 半导体发光元件

Also Published As

Publication number Publication date
WO2015119066A1 (ja) 2015-08-13
US20170012166A1 (en) 2017-01-12
JP2015149342A (ja) 2015-08-20
JP5861947B2 (ja) 2016-02-16

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Application publication date: 20160831

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