JP5846560B2 - 統合された背面リフレクタ及びダイ・アタッチを含む発光ダイオード - Google Patents
統合された背面リフレクタ及びダイ・アタッチを含む発光ダイオード Download PDFInfo
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- JP5846560B2 JP5846560B2 JP2012524727A JP2012524727A JP5846560B2 JP 5846560 B2 JP5846560 B2 JP 5846560B2 JP 2012524727 A JP2012524727 A JP 2012524727A JP 2012524727 A JP2012524727 A JP 2012524727A JP 5846560 B2 JP5846560 B2 JP 5846560B2
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- 239000000758 substrate Substances 0.000 claims description 107
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 82
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 31
- 229910002601 GaN Inorganic materials 0.000 claims description 30
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012053 enzymatic serum creatinine assay Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229960005196 titanium dioxide Drugs 0.000 description 2
- RWVIXLAPUYQGIG-UHFFFAOYSA-N (3-oxophenothiazin-2-yl)azanium;chloride Chemical compound Cl.C1=CC=C2SC3=CC(=O)C(N)=CC3=NC2=C1 RWVIXLAPUYQGIG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- NRNCYVBFPDDJNE-UHFFFAOYSA-N pemoline Chemical compound O1C(N)=NC(=O)C1C1=CC=CC=C1 NRNCYVBFPDDJNE-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
110:ダイオード領域
112:アノード・コンタクト
114:カソード・コンタクト
116:n型層
118:p型層
120:炭化シリコン基板
120a:第1の面
120b:第2の面
130:ハイブリッド・リフレクタ
132:透明層
134:反射層
232:ダイ・アタッチ層
332、732:金−スズ層
334:金層
430:統合された裏側リフレクタ及びダイ・アタッチ
432:バリア層
532:チタン層
534:白金層
536:ニッケル層
700:マウント基板
742、744:ワイヤボンド
1020:基板
Claims (7)
- 対向する第1及び第2の面と、その間に傾斜した側壁であって、前記第1及び第2面に対して傾斜した角度で延びる側壁とを有する炭化シリコン基板と、
前記第1の面上の、窒化ガリウムを含むダイオード領域と、
前記炭化シリコン基板とは反対側の前記ダイオード領域上のアノード・コンタクト及びカソード・コンタクトと、
前記ダイオード領域とは反対側の炭化シリコン基板上にあり、前記炭化シリコン基板より低い屈折率を有する透明層と、前記基板とは反対側の、前記透明層上の反射層とを有する、ハイブリッド・リフレクタと、
を含み、
前記透明層及び前記反射層は、前記炭化シリコン基板の前記傾斜した側壁の上に延出してないことを特徴とする発光ダイオード。 - 前記炭化シリコン基板とは反対側の、前記ハイブリッド・リフレクタ上のダイ・アタッチ層をさらに含み、
前記ダイ・アタッチ層は、前記炭化シリコン基板の前記傾斜した側壁の上に延出していないことを特徴とする、請求項1に記載の発光ダイオード。 - 前記ハイブリッド・リフレクタと前記ダイ・アタッチ層との間のバリア層をさらに含み、前記バリア層は、前記炭化シリコン基板の前記傾斜した側壁の上に延出していないことを特徴とする、請求項2に記載の発光ダイオード。
- 前記透明層は二酸化シリコンを含み、前記反射層はアルミニウムを含み、前記ダイ・アタッチ層は金−スズ合金を含み、前記バリア層は白金を含むことを特徴とする、請求項3に記載の発光ダイオード。
- 前記透明層及び前記反射層の両方とも、前記発光ダイオードのための統合された背面リフレクタを提供するための、前記炭化シリコン基板上の薄膜層であることを特徴とする、
請求項1に記載の発光ダイオード。 - 前記透明層、前記反射層、前記ダイ・アタッチ層及び前記バリア層の全てが、前記発光ダイオードのための統合された背面リフレクタ及びダイ・アタッチを提供するための、炭化シリコン基板上の薄膜層であることを特徴とする、請求項3に記載の発光ダイオード。
- 前記炭化シリコン基板は2.75の屈折率を有し、前記透明層は1.5の屈折率を有することを特徴とする、請求項1に記載の発光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/538,602 US9437785B2 (en) | 2009-08-10 | 2009-08-10 | Light emitting diodes including integrated backside reflector and die attach |
US12/538,602 | 2009-08-10 | ||
PCT/US2010/043615 WO2011019510A1 (en) | 2009-08-10 | 2010-07-29 | Light emitting diodes including integrated backside reflector and die attach |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013502071A JP2013502071A (ja) | 2013-01-17 |
JP5846560B2 true JP5846560B2 (ja) | 2016-01-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012524727A Active JP5846560B2 (ja) | 2009-08-10 | 2010-07-29 | 統合された背面リフレクタ及びダイ・アタッチを含む発光ダイオード |
Country Status (5)
Country | Link |
---|---|
US (1) | US9437785B2 (ja) |
JP (1) | JP5846560B2 (ja) |
KR (1) | KR20120089257A (ja) |
CN (1) | CN102612760B (ja) |
WO (1) | WO2011019510A1 (ja) |
Cited By (1)
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JP5586860B2 (ja) | 2009-02-25 | 2014-09-10 | 日亜化学工業株式会社 | 半導体発光素子及び半導体発光装置 |
US20110018013A1 (en) | 2009-07-21 | 2011-01-27 | Koninklijke Philips Electronics N.V. | Thin-film flip-chip series connected leds |
-
2009
- 2009-08-10 US US12/538,602 patent/US9437785B2/en active Active
-
2010
- 2010-07-29 WO PCT/US2010/043615 patent/WO2011019510A1/en active Application Filing
- 2010-07-29 JP JP2012524727A patent/JP5846560B2/ja active Active
- 2010-07-29 CN CN201080046495.1A patent/CN102612760B/zh active Active
- 2010-07-29 KR KR1020127005439A patent/KR20120089257A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11038091B2 (en) | 2019-03-22 | 2021-06-15 | Samsung Electronics Co., Ltd. | Light-emitting device packages |
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WO2011019510A1 (en) | 2011-02-17 |
US9437785B2 (en) | 2016-09-06 |
KR20120089257A (ko) | 2012-08-09 |
US20110031502A1 (en) | 2011-02-10 |
CN102612760A (zh) | 2012-07-25 |
JP2013502071A (ja) | 2013-01-17 |
CN102612760B (zh) | 2015-05-13 |
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