CN102612760B - 包括集成的背面反射器和芯片附接的发光二极管 - Google Patents
包括集成的背面反射器和芯片附接的发光二极管 Download PDFInfo
- Publication number
- CN102612760B CN102612760B CN201080046495.1A CN201080046495A CN102612760B CN 102612760 B CN102612760 B CN 102612760B CN 201080046495 A CN201080046495 A CN 201080046495A CN 102612760 B CN102612760 B CN 102612760B
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- China
- Prior art keywords
- layer
- silicon carbide
- light
- carbide substrates
- relative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 136
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 97
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 73
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 60
- 210000004276 hyalin Anatomy 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 33
- 239000004411 aluminium Substances 0.000 claims description 32
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 160
- 239000000463 material Substances 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 siloxanes Chemical class 0.000 description 2
- RWVIXLAPUYQGIG-UHFFFAOYSA-N (3-oxophenothiazin-2-yl)azanium;chloride Chemical compound Cl.C1=CC=C2SC3=CC(=O)C(N)=CC3=NC2=C1 RWVIXLAPUYQGIG-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/538,602 | 2009-08-10 | ||
US12/538,602 US9437785B2 (en) | 2009-08-10 | 2009-08-10 | Light emitting diodes including integrated backside reflector and die attach |
US12/538602 | 2009-08-10 | ||
PCT/US2010/043615 WO2011019510A1 (en) | 2009-08-10 | 2010-07-29 | Light emitting diodes including integrated backside reflector and die attach |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102612760A CN102612760A (zh) | 2012-07-25 |
CN102612760B true CN102612760B (zh) | 2015-05-13 |
Family
ID=43031522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080046495.1A Active CN102612760B (zh) | 2009-08-10 | 2010-07-29 | 包括集成的背面反射器和芯片附接的发光二极管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9437785B2 (zh) |
JP (1) | JP5846560B2 (zh) |
KR (1) | KR20120089257A (zh) |
CN (1) | CN102612760B (zh) |
WO (1) | WO2011019510A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8445386B2 (en) * | 2010-05-27 | 2013-05-21 | Cree, Inc. | Smoothing method for semiconductor material and wafers produced by same |
CN102651442B (zh) * | 2011-02-23 | 2015-01-07 | 展晶科技(深圳)有限公司 | 发光二极管光源 |
KR101767101B1 (ko) | 2011-05-23 | 2017-08-24 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
US8957430B2 (en) | 2011-06-15 | 2015-02-17 | Cree, Inc. | Gel underfill layers for light emitting diodes |
US8525190B2 (en) | 2011-06-15 | 2013-09-03 | Cree, Inc. | Conformal gel layers for light emitting diodes |
US9653643B2 (en) | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
US9666764B2 (en) | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
CN103247737B (zh) * | 2012-10-19 | 2016-08-24 | 璨圆光电股份有限公司 | 具有反射结构的发光二极管芯片 |
TWI590488B (zh) * | 2013-01-25 | 2017-07-01 | 晶元光電股份有限公司 | 具有高效能反射結構之發光元件 |
CN103956426B (zh) * | 2014-05-16 | 2017-05-03 | 深圳清华大学研究院 | 半导体发光芯片及发光装置 |
US9660161B2 (en) | 2014-07-07 | 2017-05-23 | Cree, Inc. | Light emitting diode (LED) components including contact expansion frame |
US10205069B2 (en) * | 2014-07-31 | 2019-02-12 | Bridgelux Inc. | LED array package |
US9214607B1 (en) | 2014-09-05 | 2015-12-15 | Cree, Inc. | Wire bonded light emitting diode (LED) components including reflective layer |
US9601673B2 (en) | 2014-11-21 | 2017-03-21 | Cree, Inc. | Light emitting diode (LED) components including LED dies that are directly attached to lead frames |
CN105737103B (zh) * | 2014-12-10 | 2018-07-20 | 深圳市光峰光电技术有限公司 | 波长转换装置及相关荧光色轮和投影装置 |
JP2018026597A (ja) * | 2017-11-16 | 2018-02-15 | ローム株式会社 | 発光素子および発光素子パッケージ |
KR20200095210A (ko) | 2019-01-31 | 2020-08-10 | 엘지전자 주식회사 | 반도체 발광 소자, 이의 제조 방법, 및 이를 포함하는 디스플레이 장치 |
KR20200112369A (ko) | 2019-03-22 | 2020-10-05 | 삼성전자주식회사 | 발광 소자 패키지 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1682384A (zh) * | 2002-09-19 | 2005-10-12 | 克里公司 | 包括锥形侧壁的涂有磷光体的发光二极管及其制造方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
US6078064A (en) | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6794684B2 (en) * | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
EP1263058B1 (en) | 2001-05-29 | 2012-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting element |
US6787435B2 (en) * | 2001-07-05 | 2004-09-07 | Gelcore Llc | GaN LED with solderable backside metal |
US7211833B2 (en) | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
TW523939B (en) | 2001-11-07 | 2003-03-11 | Nat Univ Chung Hsing | High-efficient light emitting diode and its manufacturing method |
JP3982284B2 (ja) | 2002-03-06 | 2007-09-26 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
TW561637B (en) | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
US20040169185A1 (en) | 2003-02-28 | 2004-09-02 | Heng Liu | High luminescent light emitting diode |
US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
KR101127314B1 (ko) | 2003-11-19 | 2012-03-29 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체소자 |
TWI230474B (en) | 2004-04-13 | 2005-04-01 | United Epitaxy Co Ltd | High luminance indium gallium aluminum nitride light emitting, device and manufacture method thereof |
TWI308397B (en) | 2004-06-28 | 2009-04-01 | Epistar Corp | Flip-chip light emitting diode and fabricating method thereof |
US7943949B2 (en) | 2004-09-09 | 2011-05-17 | Bridgelux, Inc. | III-nitride based on semiconductor device with low-resistance ohmic contacts |
US7274040B2 (en) | 2004-10-06 | 2007-09-25 | Philips Lumileds Lighting Company, Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2007158133A (ja) | 2005-12-06 | 2007-06-21 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
US7915619B2 (en) | 2005-12-22 | 2011-03-29 | Showa Denko K.K. | Light-emitting diode and method for fabrication thereof |
JP4942996B2 (ja) | 2005-12-22 | 2012-05-30 | 昭和電工株式会社 | 発光ダイオード |
US7622746B1 (en) | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
US7737455B2 (en) | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
JP5126875B2 (ja) | 2006-08-11 | 2013-01-23 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
JP2008192825A (ja) | 2007-02-05 | 2008-08-21 | Toyoda Gosei Co Ltd | 半導体発光素子 |
US20080283854A1 (en) | 2007-05-01 | 2008-11-20 | The Regents Of The University Of California | Light emitting diode device layer structure using an indium gallium nitride contact layer |
JP2009021349A (ja) | 2007-07-11 | 2009-01-29 | Rohm Co Ltd | 半導体発光素子の製造方法及び半導体発光素子 |
US8575633B2 (en) * | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
JP5586860B2 (ja) | 2009-02-25 | 2014-09-10 | 日亜化学工業株式会社 | 半導体発光素子及び半導体発光装置 |
US20110018013A1 (en) | 2009-07-21 | 2011-01-27 | Koninklijke Philips Electronics N.V. | Thin-film flip-chip series connected leds |
-
2009
- 2009-08-10 US US12/538,602 patent/US9437785B2/en active Active
-
2010
- 2010-07-29 JP JP2012524727A patent/JP5846560B2/ja active Active
- 2010-07-29 KR KR1020127005439A patent/KR20120089257A/ko not_active Application Discontinuation
- 2010-07-29 WO PCT/US2010/043615 patent/WO2011019510A1/en active Application Filing
- 2010-07-29 CN CN201080046495.1A patent/CN102612760B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1682384A (zh) * | 2002-09-19 | 2005-10-12 | 克里公司 | 包括锥形侧壁的涂有磷光体的发光二极管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2013502071A (ja) | 2013-01-17 |
KR20120089257A (ko) | 2012-08-09 |
JP5846560B2 (ja) | 2016-01-20 |
WO2011019510A1 (en) | 2011-02-17 |
US9437785B2 (en) | 2016-09-06 |
CN102612760A (zh) | 2012-07-25 |
US20110031502A1 (en) | 2011-02-10 |
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Inventor after: Bergmann Michael John Inventor after: Bergmann Michael J. Inventor after: Lahaye Jeff Inventor after: W. T. Parker Inventor after: Pan Fangyuan Inventor after: D *su Inventor after: Donofrio Matthew Inventor before: Bergmann Michael John Inventor before: Bergmann Michael J. Inventor before: Lahaye Jeff Inventor before: W. T. Parker Inventor before: pun Arthur Fong-yuen Inventor before: D *su Inventor before: Donofrio Matthew |
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