JP5821454B2 - 積層フィルム、電極付き積層フィルム及び有機el素子 - Google Patents
積層フィルム、電極付き積層フィルム及び有機el素子 Download PDFInfo
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- JP5821454B2 JP5821454B2 JP2011202872A JP2011202872A JP5821454B2 JP 5821454 B2 JP5821454 B2 JP 5821454B2 JP 2011202872 A JP2011202872 A JP 2011202872A JP 2011202872 A JP2011202872 A JP 2011202872A JP 5821454 B2 JP5821454 B2 JP 5821454B2
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- 229910052799 carbon Inorganic materials 0.000 description 3
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- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
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- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
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- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
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- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- B32B2250/00—Layers arrangement
- B32B2250/24—All layers being polymeric
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- B32B2307/00—Properties of the layers or laminate
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Description
−CO−Ar2−CO− (2)
−O−Ar3−O− (3)
−CO−Ar2−CO− (2)
−O−Ar3−O− (3)
フローテスター((株)島津製作所製の「CFT−500型」)を用いて、試料約2gを、内径1mm、長さ10mmのダイスを取り付けた毛細管型レオメーターに充填し、9.8MPa(100kgf/cm2)の荷重下において、昇温速度4℃/分で試料を溶融させながら押し出し、溶融粘度が4800Pa・s(48000ポイズ)を示す温度を測定した。
JIS K7129 C法に準拠して、ガス透過率・透湿度測定装置(GTRテック(株)の「GTR−30X」)により、温度40℃、相対湿度90%の条件で、水蒸気透過度を測定した。
ITO膜の表面抵抗率(シート抵抗)は、4探針法抵抗測定装置(三菱化学製ロレスタAP)により測定した。
攪拌装置、トルクメータ、窒素ガス導入管、温度計および還流冷却器を備えた反応器に、6−ヒドロキシ−2−ナフトエ酸1034.99g(5.5モル)、2,6−ナフタレンジカルボン酸378.33g(1.75モル)、テレフタル酸83.07g(0.5モル)、ヒドロキノン272.52g(2.475モル:2,6−ナフタレンジカルボン酸及びテレフタル酸の合計量に対して0.225モル過剰)、無水酢酸1226.87g(12モル)、及び触媒として1−メチルイミダゾール0.17gを入れ、反応器内のガスを窒素ガスで置換した後、窒素ガス気流下、攪拌しながら、室温から145℃まで15分かけて昇温し、145℃で1時間還流させた。次いで、副生酢酸及び未反応の無水酢酸を留去しながら、145℃から310℃まで3時間30分かけて昇温し、310℃で3時間保持した後、内容物を取り出し、室温まで冷却した。得られた固形物を、粉砕機で粒径約0.1〜1mmに粉砕後、窒素雰囲気下、室温から250℃まで1時間かけて昇温し、250℃から310℃まで10時間かけて昇温し、310℃で5時間保持することにより、固相重合を行った。固相重合後、冷却して、粉末状の液晶ポリエステルを得た。この液晶ポリエステルは、全繰り返し単位の合計量に対して、Ar1が2,6−ナフチレン基である繰返し単位(1)を55モル%、Ar2が2,6−ナフチレン基である繰返し単位(2)を17.5モル%、Ar2が1,4−フェニレン基である繰返し単位(2)を5モル%、及びAr3が1,4−フェニレン基である繰返し単位(3)を22.5%有し、その流動開始温度は333℃であった。
製造例1と同様の反応器に、p−ヒドロキシ安息香酸911g(6.6モル)、イソフタル酸91g(0.55モル)、テレフタル酸274g(1.65モル)、4,4’−ジヒドロキシビフェニル409g(2.2モル)、無水酢酸1235g(12.1モル)、及び触媒として1−メチルイミダゾール0.17gを入れ、反応器内のガスを窒素ガスで置換した後、窒素ガス気流下、攪拌しながら、室温から150℃まで15分かけて昇温し、150℃で1時間還流させた。次いで、1−メチルイミダゾール1.7gを添加した後、副生酢酸及び未反応の無水酢酸を留去しながら、150℃から320℃まで2時間50分かけて昇温し、トルクの上昇が認められた時点で、内容物を取り出し、室温まで冷却した。得られた固形物を、粉砕機で粒径約0.1〜1mmに粉砕後、窒素雰囲気下、室温から250℃まで1時間かけて昇温し、250℃から285℃まで5時間かけて昇温し、285℃で3時間保持することにより、固相重合を行った。固相重合後、冷却して、粉末状の液晶ポリエステルを得た。この液晶ポリエステルの流動開始温度は、327℃であった。
製造例1で得られた粉末状の液晶ポリエステルを、二軸押出機((株)池貝製の「PCM−30」)で造粒し、ペレット状にした後、一軸押出機(スクリュー径50mm)に供給して溶融させ、Tダイ(リップ長さ300mm、リップクリアランス1mm、ダイ温度350℃)からフィルム状に押し出して冷却し、厚さ50μmの液晶ポリエステルを得た。この液晶ポリエステルフィルムの水蒸気透過度は、0.0030g/m2・24hであった。
実施例1で得られた積層フィルムについてイオンプレーティング法によりガスバリア層を形成した反対面にITO(酸化インジュウムスズ)を用いて基板温度180℃にて厚さ200nm透明電極(ITO膜)を形成した。この積層フィルム上に形成した透明電極のシート抵抗を測定したところ9.1Ω/□であった。
実施例1で得られた積層フィルムについてイオンプレーティング法によりガスバリア層を形成した反対面にITO(酸化インジュウムスズ)を用いて基板温度250℃にて厚さ200nm透明電極を形成した。この積層フィルム上に形成した透明電極のシート抵抗を測定したところ6.3Ω/□であった。
製造例2で得られた粉末状の液晶ポリエステルを、二軸押出機((株)池貝製の「PCM−30」)で造粒し、ペレット状にした後、一軸押出機(スクリュー径50mm)に供給して溶融させ、Tダイ(リップ長さ300mm、リップクリアランス1mm、ダイ温度350℃)からフィルム状に押し出して冷却し、厚さ50μmの液晶ポリエステルを得た。この液晶ポリエステルフィルムの水蒸気透過度は、0.080g/m2・24hであった。
比較例1で得られた積層フィルムについてイオンプレーティング法によりガスバリア層を形成した反対面にITO(酸化インジュウムスズ)を用いて基板温度180℃にて厚さ200nm透明電極を形成した。この積層フィルム上に形成した透明電極のシート抵抗を測定したところ12.3Ω/□であった。
4A・・・陰極、4B・・・陽極、5・・・有機EL層、
5a・・・電子輸送層、5b・・・発光層、5c・・・正孔輸送層、
6・・・封止層、7・・・封止材。
Claims (9)
- 下記式(1)で表される繰返し単位と、下記式(2)で表される繰返し単位と、下記式(3)で表される繰返し単位とを有し、2,6−ナフチレン基を含む繰返し単位の含有量が、全繰返し単位の合計量に対して、40モル%以上である液晶ポリエステルから構成される基材層と、前記基材層の少なくとも一方の面上に配置された水蒸気バリア層とを有する積層フィルム。
−O−Ar1−CO− (1)
−CO−Ar2−CO− (2)
−O−Ar3−O− (3)
(Ar1は、2,6−ナフチレン基、1,4−フェニレン基又は4,4’−ビフェニリレン基を表す。Ar2及びAr3は、それぞれ独立に、2,6−ナフチレン基、1,4−フェニレン基、1,3−フェニレン基又は4,4’−ビフェニリレン基を表す。Ar1、Ar2又はAr3で表される前記基にある水素原子は、それぞれ独立に、ハロゲン原子、アルキル基又はアリール基で置換されていてもよい。) - 液晶ポリエステルから構成され、温度40℃及び相対湿度90%にて測定される水蒸気透過度が0.005g/m2・24h以下である基材層と、前記基材層の少なくとも一方の面上に配置された水蒸気バリア層とを有する積層フィルム。
- 厚さ50μmのフィルムにしたときの温度40℃及び相対湿度90%にて測定される水蒸気透過度が0.005g/m2・24h以下である液晶ポリエステルから構成される基材層と、前記基材層の少なくとも一方の面上に配置された水蒸気バリア層とを有する積層フィルム。
- 前記基材層の厚さが5〜100μmである請求項1〜3のいずれかに記載の積層フィルム。
- 前記水蒸気バリア層が、アルミニウム、ケイ素、チタン、クロム、鉄、コバルト、ニッケル、銅、亜鉛、銀及び金からなる群から選ばれる少なくとも1種の元素の単体、前記元素の酸化物、前記元素の窒化物並びに前記元素の酸窒化物からなる群から選ばれる少なくとも1種の物質から構成される層である請求項1〜4のいずれかに記載の積層フィルム。
- 前記水蒸気バリア層の厚さが5〜250nmである請求項1〜5のいずれかに記載の積層フィルム。
- 温度40℃及び相対湿度90%にて測定される水蒸気透過度が0.0001g/m2・24h以下である請求項1〜6のいずれかに記載の積層フィルム。
- 請求項1〜7のいずれかに記載の積層フィルムと、前記積層フィルムの少なくとも一方の面上に配置された電極とを有する電極付き積層フィルム。
- 請求項1〜7のいずれかに記載の積層フィルムと、前記積層フィルム上に配置された一対の電極と、前記一対の電極間に配置された有機EL層とを有する有機EL素子。
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